SCT20N120

SCT20N120 Datasheet Silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ = 150 °C) in an HiP247 package Features • • Very tight variation of on-resistance vs. temperature Very high operating junction temperature capability (TJ = 200 °C) • • Very fast and robust intrinsic body diode Low capacitance 3 2 1 HiP247 Applications • • • • D(2, TAB) Solar inverters, UPS Motor drives High voltage DC-DC converters Switch mode power supplies Description G(1) S(3) AM01475v1_noZen This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. Product status link SCT20N120 Product summary Order code SCT20N120 Marking SCT20N120 Package HiP247 Packing Tube DS10360 - Rev 5 - September 2019 For further information contact your local STMicroelectronics sales office. www.st.com SCT20N120 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 1200 V VGS Gate-source voltage -10 to 25 V ID Drain current (continuous) at TC = 25 °C 20 A ID Drain current (continuous) at TC = 100 °C 16 A IDM (1) Drain current (pulsed) 45 A PTOT Total power dissipation at TC = 25 °C 175 W Tstg Storage temperature range Tj Operating junction temperature range -55 to 200 °C °C 1. Pulse width limited by safe operating area. Table 2. Thermal data Symbol DS10360 - Rev 5 Parameter Value Unit Rthj-case Thermal resistance junction-case 1 °C/W Rthj-amb Thermal resistance junction-ambient 40 °C/W page 2/13 SCT20N120 Electrical characteristics 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified). Table 3. On/off states Symbol Parameter Test conditions Min. Typ. VGS = 0 V, VDS = 1200 V IDSS Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = -10 to 22 V VGS(th) Gate threshold voltage VDS = VGS, ID = 1 mA RDS(on) Static drain-source onresistance Max. 100 VGS = 0 V, VDS = 1200 V, TJ = 200 °C 50 100 2 3.5 VGS = 20 V, ID = 10 A 169 VGS = 20 V, ID = 10 A, TJ = 150 °C 189 VGS = 20 V, ID = 10 A, TJ = 200 °C 220 Unit µA nA V 239 mΩ Table 4. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Rg Gate input resistance VDS = 400 V, f = 1 MHz, VGS = 0 V VDD = 800 V, ID = 10 A, VGS = 0 to 20 V f=1 MHz, ID = 0 A Min. Typ. Max. Unit - 650 - pF - 65 - pF - 14 - pF - 45 - nC - 7 - nC - 11.7 - nC - 7 - Ω Min. Typ. Max. Unit Table 5. Switching energy (inductive load) Symbol DS10360 - Rev 5 Parameter Test conditions Eon Turn-on switching energy VDD = 800 V, ID = 10 A - 160 - µJ Eoff Turn-off switching energy RG= 6.8 Ω, VGS = -2 to 20 V - 90 - µJ Eon Turn-on switching energy VDD = 800 V, ID = 10 A - 165 - µJ Eoff Turn-off switching energy RG= 6.8 Ω, VGS = -2 to 20 V, TJ= 150 °C - 100 - µJ page 3/13 SCT20N120 Electrical characteristics Table 6. Switching times Symbol td(on)V tf(V) td(off)V tr(V) Parameter Test conditions Turn-on delay time Fall time VDD = 800 V, ID = 10 A, RG = 0 Ω, VGS = 0 to 20 V Turn-off delay time Rise time Min. Typ. Max. Unit - 10 - ns - 17 - ns - 27 - ns - 16 - ns Min. Typ. Max. Unit - 3.6 - V - 15 - ns - 75 - nC - 8 - A Table 7. Reverse SiC diode characteristics Symbol DS10360 - Rev 5 Parameter VSD Diode forward voltage trr Reverse recovery time Qrr Reverse recovery charge Irrm Peak reverse recovery current Test conditions IF = 5 A, VGS = -5 V ISD =10 A, VGS = -5 V, VR = 800 V, dif/dt = 1650 A/µs page 4/13 SCT20N120 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area GIPD051020141115FSR ID (A) Figure 2. Typical thermal impedance GIPD051120141138FSR °C/W (on ) era t lim ion in ite d b this y R are ai DS s 0.8 0.7 0.6 Op 10 0.5 100µs 1 1ms 10ms 0.4 0.3 0.2 Single pulse 0.1 0.1 0.1 10 1 100 VDS(V) 1000 Figure 3. Output characteristics @ TJ = 25 °C GIPD311020141112FSR ID (A) VGS= 20 V 18V 0.0 10-6 10-5 10-4 10-3 10-2 10-1 100 tp(s) Figure 4. Output characteristics @ TJ = 200 °C GIPD311020141129FSR ID (A) VGS= 20 V 18V 40 40 30 30 16V 14V 16V 12V 20 20 14V 10 12V 10V 0 0 4 8 12 VDS(V) Figure 5. Transfer characteristics GIPD311020141137FSR ID (A) 10 10V 0 0 8 4 VDS(V) 12 Figure 6. Body diode characteristics @ TJ = -50 °C VDS(V) GIPD311020141159FSR -4 -5 -3 -2 -1 0 0 VGS = -5 V 20 -5 VDS = 12 V 15 VGS = -2 V TJ = 200 °C -10 10 TJ = 25 °C VGS = 0 V -15 5 0 0 DS10360 - Rev 5 4 8 12 16 VGS(V) (A) IDS page 5/13 SCT20N120 Electrical characteristics (curves) Figure 7. Body diode characteristics @ TJ = 25 °C VDS(V) GIPD311020141335FSR -4 -5 -3 -2 -1 0 0 Figure 8. Body diode characteristics @ TJ = 150 °C GIPD311020141338FSR VDS(V) -4 -5 VGS = -5 V -3 -2 VGS = -5 V VGS = -2 V -1 0 0 VGS = -2 V -5 -5 -10 -10 VGS = 0 V VGS = 0 V -15 -15 (A) IDS (A) IDS Figure 9. 3rd quadrant characteristics @ TJ = -50 °C VDS(V) GIPD311020141343FSR -4 -5 -3 -2 -1 0 1 VGS = 0 V 0 Figure 10. 3rd quadrant characteristics @ TJ = 25 °C GIPD311020141352FSR VDS(V) -3 -4 -5 VGS = 5 V 0 0 -10 VGS = 5 V -20 -20 VGS = 10 V VGS = 10 V -30 -30 VGS = 15 V VGS = 15 V -40 TJ = -50 °C VGS = 20 V GIPD311020141405FSR -4 -3 TJ = 25 °C VGS = 20 V (A) ID Figure 11. 3rd quadrant characteristics @ TJ = 150 °C -5 -1 VGS = 0 V -10 VDS(V) -2 -2 -1 0 0 -40 (A) ID Figure 12. Normalized gate threshold vs. temperature GIPD311020141411FSR VGS(th) (norm) ID = 1 mA VGS = 0 V -10 VGS = 5 V VGS = 10 V -20 1.2 1.0 VGS = 15 V -30 TJ = 150 °C VGS = 20 V DS10360 - Rev 5 -40 (A) ID 0.8 0.6 0.4 -50 0 50 100 150 Tj(°C) page 6/13 SCT20N120 Electrical characteristics (curves) Figure 13. Normalized RDS(on) vs. temperature GIPD051120141148FSR RDS(on) (norm) Figure 14. Capacitances variation GIPD311020141419FSR C (pF) 1.15 VGS = 20 V 1000 1.10 Ciss 1.05 100 1.00 0.95 10 Coss Crss f = 1 MHz 0.90 0.85 25 DS10360 - Rev 5 50 75 100 125 150 175 Tj(°C) 1 0.1 1 10 100 VDS(V) page 7/13 SCT20N120 Test circuits 3 Test circuits Figure 15. Switching test waveforms for transition times Figure 16. Clamped inductive switching waveform t Off t On V DS t d (On) t d (Off) tf VDS On tr 90% 90% 10% VGS On V GS VGS Off GIPD101020141511FSR DS10360 - Rev 5 V DS Off 10% 90% 10% GIPD101020141502FSR page 8/13 SCT20N120 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 HiP247 package information Figure 17. HiP247 package outline 8396756_2 DS10360 - Rev 5 page 9/13 SCT20N120 HiP247 package information Table 8. HiP247 package mechanical data Dim. mm Min. Typ. Max. A 4.85 5.00 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 DS10360 - Rev 5 5.45 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 5.70 page 10/13 SCT20N120 Revision history Table 9. Document revision history DS10360 - Rev 5 Date Revision Changes 07-Nov-2014 1 First release 17-Feb-2015 2 Updated title in cover page. 20-Feb-2015 3 17-Dec-2015 4 17-Sep-2019 5 Updated Figure 3: Thermal impedance. Minor text changes. Updated title in cover page and Table 4: On/off states. Updated Figure 1. Safe operating area and Section 4.1 HiP247 package information. Minor text changes. page 11/13 SCT20N120 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 4.1 HiP247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 DS10360 - Rev 5 page 12/13 SCT20N120 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS10360 - Rev 5 page 13/13