SCT20N120AG

SCT20N120AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C), in an HiP247 package Features 1 2 3 HiP247 • • • AEC-Q101 qualified Very tight variation of on-resistance vs. temperature Very high operating temperature capability (TJ = 200 °C) • • Very fast and robust intrinsic body diode Low capacitance Applications • • • • D(2, TAB) Motor drives EV chargers High voltage DC-DC converters Switch mode power supplies Description G(1) S(3) AM01475v1_noZen This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industrystandard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. Product status link SCT20N120AG Product summary Order code Marking SCT20N120AG Package HiP247 Packing Tube DS12516 - Rev 4 - September 2022 For further information contact your local STMicroelectronics sales office. www.st.com SCT20N120AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 1200 V VGS Gate-source voltage -10 to 25 V ID Drain current (continuous) at TC = 25 °C 20 A ID Drain current (continuous) at TC = 100 °C 16 A IDM (1) Drain current (pulsed) 45 A PTOT Total power dissipation at TC = 25 °C 153 W Tstg Storage temperature range Tj Operating junction temperature range -55 to 200 °C °C 1. Pulse width limited by safe operating area. Table 2. Thermal data Symbol DS12516 - Rev 4 Parameter Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient Value Unit 1.14 °C/W 40 °C/W page 2/13 SCT20N120AG Electrical characteristics 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified). Table 3. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Min. Typ. 1200 Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = -10 to 25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 1 mA RDS(on) Static drain-source onresistance 10 VGS = 0 V, VDS = 1200 V, TJ = 200 °C 50 100 2 Unit V VGS = 0 V, VDS = 1200 V IDSS Max. 3.5 VGS = 20 V, ID = 10 A 169 VGS = 20 V, ID = 10 A, TJ = 150 °C 189 VGS = 20 V, ID = 10 A, TJ = 200 °C 220 µA nA V 239 mΩ Table 4. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Rg Gate input resistance VDS = 400 V, f = 1 MHz, VGS = 0 V VDD = 800 V, ID = 10 A, VGS = 0 to 20 V f=1 MHz, ID = 0 A Min. Typ. Max. Unit - 650 - pF - 65 - pF - 14 - pF - 45 - nC - 7 - nC - 11.7 - nC - 7 - Ω Min. Typ. Max. Unit Table 5. Switching energy (inductive load) Symbol DS12516 - Rev 4 Parameter Test conditions Eon Turn-on switching energy VDD = 800 V, ID = 10 A - 160 - µJ Eoff Turn-off switching energy RG= 6.8 Ω, VGS = -2 to 20 V - 90 - µJ Eon Turn-on switching energy VDD = 800 V, ID = 10 A - 165 - µJ Eoff Turn-off switching energy RG= 6.8 Ω, VGS = -2 to 20 V, TJ= 150 °C - 100 - µJ page 3/13 SCT20N120AG Electrical characteristics Table 6. Switching times Symbol td(on)V tf(V) td(off)V tr(V) Parameter Test conditions Turn-on delay time Fall time VDD = 800 V, ID = 10 A, RG = 0 Ω, VGS = 0 to 20 V Turn-off delay time Rise time Min. Typ. Max. Unit - 10 - ns - 17 - ns - 27 - ns - 16 - ns Min. Typ. Max. Unit - 3.6 - V - 15 - ns - 75 - nC - 8 - A Table 7. Reverse SiC diode characteristics Symbol DS12516 - Rev 4 Parameter VSD Diode forward voltage trr Reverse recovery time Qrr Reverse recovery charge Irrm Peak reverse recovery current Test conditions IF = 5 A, VGS = -5 V ISD =10 A, VGS = -5 V, VR = 800 V, dif/dt = 1650 A/µs page 4/13 SCT20N120AG Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 2. Maximum transient thermal impedance Figure 1. Safe operating area ID (A) ea tp =1 μs S( on ) O is pera lim tio ite n in db t y R his ar D 101 ZthJ-C (°C/W) GIPD051020141115FSR IDM GIPD051120141138FSR 100 duty=0.5 0.4 0.3 0.2 tp =10 µs tp =100 µs 10-1 0.1 0.05 RDS(on) max. 100 tp =1 ms TC = 25 °C TJ ≤ 200°C single pulse 10-1 10-1 100 101 V(BR)DSS tp =10 ms 102 Figure 3. Output characteristics @ TJ = 25 °C GIPD311020141112FSR ID (A) Single pulse 10-3 VGS= 20 V 18V 40 ton T 10-7 VDS (V) 103 RthJ-C = 1.14 (°C/W) duty = ton / T 10-2 10-6 10-5 10-4 10-3 10-2 tp (s) Figure 4. Output characteristics @ TJ = 200 °C GIPD311020141129FSR ID (A) VGS= 20 V 18V 40 16V 14V 30 30 16V 12V 20 20 14V 10 12V 10V 0 0 4 8 12 VDS(V) Figure 5. Transfer characteristics GIPD311020141137FSR ID (A) 10 10V 0 0 4 8 VDS(V) 12 Figure 6. Body diode characteristics @ TJ = -50 °C VDS(V) GIPD311020141159FSR -4 -5 -3 -2 -1 0 0 VGS = -5 V 20 -5 VDS = 12 V 15 VGS = -2 V TJ = 200 °C -10 10 TJ = 25 °C VGS = 0 V -15 5 0 0 DS12516 - Rev 4 4 8 12 16 VGS(V) (A) IDS page 5/13 SCT20N120AG Electrical characteristics (curves) Figure 7. Body diode characteristics @ TJ = 25 °C VDS(V) GIPD311020141335FSR -4 -5 -3 -2 -1 0 0 Figure 8. Body diode characteristics @ TJ = 150 °C GIPD311020141338FSR VDS(V) -4 -5 VGS = -5 V -3 -2 VGS = -5 V -1 0 0 VGS = -2 V VGS = -2 V -5 -5 -10 -10 VGS = 0 V VGS = 0 V -15 -15 (A) IDS (A) IDS Figure 9. 3rd quadrant characteristics @ TJ = -50 °C VDS(V) GIPD311020141343FSR -4 -5 -3 -2 -1 0 1 VGS = 0 V 0 Figure 10. 3rd quadrant characteristics @ TJ = 25 °C GIPD311020141352FSR VDS(V) -3 -4 -5 VGS = 5 V 0 0 -10 VGS = 5 V -20 -20 VGS = 10 V VGS = 10 V -30 -30 VGS = 15 V VGS = 15 V -40 TJ = -50 °C VGS = 20 V GIPD311020141405FSR -4 -3 TJ = 25 °C VGS = 20 V (A) ID Figure 11. 3rd quadrant characteristics @ TJ = 150 °C -5 -1 VGS = 0 V -10 VDS(V) -2 -2 -1 0 0 -40 (A) ID Figure 12. Normalized gate threshold vs. temperature GIPD311020141411FSR VGS(th) (norm) ID = 1 mA VGS = 0 V -10 VGS = 5 V VGS = 10 V -20 1.2 1.0 VGS = 15 V -30 TJ = 150 °C VGS = 20 V DS12516 - Rev 4 -40 (A) ID 0.8 0.6 0.4 -50 0 50 100 150 Tj(°C) page 6/13 SCT20N120AG Electrical characteristics (curves) Figure 13. Normalized RDS(on) vs. temperature GIPD051120141148FSR RDS(on) (norm) Figure 14. Capacitances variation GIPD311020141419FSR C (pF) 1.15 VGS = 20 V 1000 1.10 Ciss 1.05 100 1.00 0.95 10 Coss Crss f = 1 MHz 0.90 0.85 25 DS12516 - Rev 4 50 75 100 125 150 175 Tj(°C) 1 0.1 1 10 100 VDS(V) page 7/13 SCT20N120AG Test circuits 3 Test circuits Figure 15. Switching test waveforms for transition times Figure 16. Clamped inductive switching waveform t Off t On V DS t d (On) t d (Off) tf VDS On tr 90% 90% 10% VGS On V GS VGS Off GIPD101020141511FSR DS12516 - Rev 4 V DS Off 10% 90% 10% GIPD101020141502FSR page 8/13 SCT20N120AG Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 HiP247 package information Figure 17. HiP247 package outline 8581091_4 DS12516 - Rev 4 page 9/13 SCT20N120AG HiP247 package information Table 8. HiP247 package mechanical data Dim. Min. Typ. Max. A 4.85 5.00 5.15 A1 2.20 A2 1.90 b 1.00 1.40 b1 2.00 2.40 b2 3.00 3.40 c 0.40 0.80 D 19.85 20.00 20.15 E 15.45 15.60 15.75 E3 1.45 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 18.30 P 3.55 3.65 Q 5.65 5.95 S 5.30 aaa DS12516 - Rev 4 mm 2.60 2.00 2.10 1.65 5.45 18.50 5.60 18.70 5.50 5.70 0.04 0.10 page 10/13 SCT20N120AG Revision history Table 9. Document revision history Date Revision Changes 21-Mar-2018 1 First release 01-Mar-2019 2 Updated Table 3. On/off states. Updated package information. 21-Oct-2019 3 Updated Table 1. Absolute maximum ratings, Table 2. Thermal data, Figure 1. Safe operating area and Figure 2. Maximum transient thermal impedance. Minor text changes. 21-Sep-2022 DS12516 - Rev 4 4 Updated Section 4.1 HiP247 package information. Minor text changes. page 11/13 SCT20N120AG Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 4.1 HiP247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 DS12516 - Rev 4 page 12/13 SCT20N120AG IMPORTANT NOTICE – READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2022 STMicroelectronics – All rights reserved DS12516 - Rev 4 page 13/13