SCT20N120H

SCT20N120H Datasheet Silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C), in an H²PAK-2 package Features TAB 2 3 1 • • Very tight variation of on-resistance vs. temperature Very high operating junction temperature capability (TJ = 175 °C) • • Very fast and robust intrinsic body diode Low capacitance Applications H2PAK-2 • • • • D(TAB) Solar inverters, UPS Motor drives High voltage DC-DC converters Switch mode power supplies Description G(1) S(2,3) NCHG1DTABS23 This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allow designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. Product status link SCT20N120H Product summary Order code SCT20N120H Marking SCT20N120 Package H2PAK-2 Packing Tape and reel DS13094 - Rev 2 - December 2019 For further information contact your local STMicroelectronics sales office. www.st.com SCT20N120H Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 1200 V VGS Gate-source voltage -10 to 25 V ID Drain current (continuous) at TC = 25 °C 20 A ID Drain current (continuous) at TC = 100 °C 16 A IDM (1) Drain current (pulsed) 45 A PTOT Total power dissipation at TC = 25 °C 150 W Tstg Storage temperature range Tj Operating junction temperature range -55 to 175 °C °C 1. Pulse width limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 1 °C/W Rthj-pcb (1) Thermal resistance junction-pcb 35 °C/W 1. When mounted on 1 inch² FR-4 board, 2 oz Cu. DS13094 - Rev 2 page 2/16 SCT20N120H Electrical characteristics 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified). Table 3. On/off states Symbol Parameter Test conditions Min. Typ. VGS = 0 V, VDS = 1200 V IDSS Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = -10 to 22 V VGS(th) Gate threshold voltage VDS = VGS, ID = 1 mA RDS(on) Static drain-source onresistance Max. 100 VGS = 0 V, VDS = 1200 V, TJ = 175 °C 50 100 2 3.5 VGS = 20 V, ID = 10 A 169 VGS = 20 V, ID = 10 A, TJ = 150 °C 189 VGS = 20 V, ID = 10 A, TJ = 175 °C 203 Unit µA nA V 239 mΩ Table 4. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Rg Gate input resistance VDS = 400 V, f = 1 MHz, VGS = 0 V VDD = 800 V, ID = 10 A, VGS = 0 to 20 V f=1 MHz, ID = 0 A Min. Typ. Max. Unit - 650 - pF - 65 - pF - 14 - pF - 45 - nC - 7 - nC - 11.7 - nC - 7 - Ω Min. Typ. Max. Unit Table 5. Switching energy (inductive load) Symbol Parameter Test conditions Eon Turn-on switching energy VDD = 800 V, ID = 10 A - 160 - µJ Eoff Turn-off switching energy RG= 6.8 Ω, VGS = -2 to 20 V - 90 - µJ Eon Turn-on switching energy VDD = 800 V, ID = 10 A - 165 - µJ Eoff Turn-off switching energy RG= 6.8 Ω, VGS = -2 to 20 V, TJ= 150 °C - 100 - µJ Min. Typ. Max. Unit - 10 - ns - 17 - ns - 27 - ns Table 6. Switching times Symbol td(on)V tf(V) td(off)V DS13094 - Rev 2 Parameter Test conditions Turn-on delay time Fall time Turn-off delay time VDD = 800 V, ID = 10 A, RG = 0 Ω, VGS = 0 to 20 V page 3/16 SCT20N120H Electrical characteristics Symbol tr(V) Parameter Test conditions VDD = 800 V, ID = 10 A, RG = 0 Ω, VGS = 0 to 20 V Rise time Min. Typ. Max. Unit - 16 - ns Min. Typ. Max. Unit - 3.6 - V - 15 - ns - 75 - nC - 8 - A Table 7. Reverse SiC diode characteristics Symbol DS13094 - Rev 2 Parameter VSD Diode forward voltage trr Reverse recovery time Qrr Reverse recovery charge Irrm Peak reverse recovery current Test conditions IF = 5 A, VGS = -5 V ISD =10 A, VGS = -5 V, VR = 800 V, dif/dt = 1650 A/µs page 4/16 SCT20N120H Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Characteristic curves are based on SCT20N120 in HiP247 package option Figure 1. Safe operating area GIPD051020141115FSR ID (A) GIPD051120141138FSR °C/W ) is 0.8 on Op era t lim ion in ite d b this y R are a D 0.7 S( 10 Figure 2. Maximum transient thermal impedance 0.6 0.5 100µs 1 1ms 10ms 0.4 0.3 0.2 Single pulse 0.1 0.1 0.1 10 1 100 VDS(V) 1000 Figure 3. Output characteristics @ TJ = 25 °C GIPD311020141112FSR ID (A) VGS= 20 V 18V 40 0.0 10-6 10-5 10-4 10-3 10-2 10-1 100 tp(s) Figure 4. Output characteristics @ TJ = 200 °C GIPD311020141129FSR ID (A) VGS= 20 V 18V 40 16V 14V 30 30 16V 12V 20 20 14V 10 12V 10V 0 0 4 8 12 VDS(V) Figure 5. Transfer characteristics GIPD311020141137FSR ID (A) 10 10V 0 0 8 4 VDS(V) 12 Figure 6. Body diode characteristics @ TJ = -50 °C VDS(V) GIPD311020141159FSR -4 -5 -3 -2 -1 0 0 VGS = -5 V 20 -5 VDS = 12 V 15 VGS = -2 V TJ = 200 °C -10 10 TJ = 25 °C VGS = 0 V -15 5 0 0 DS13094 - Rev 2 4 8 12 16 VGS(V) (A) IDS page 5/16 SCT20N120H Electrical characteristics (curves) Figure 7. Body diode characteristics @ TJ = 25 °C VDS(V) GIPD311020141335FSR -4 -5 -3 -2 -1 0 0 Figure 8. Body diode characteristics @ TJ = 150 °C GIPD311020141338FSR VDS(V) -4 -5 VGS = -5 V -3 -2 VGS = -5 V -1 0 0 VGS = -2 V VGS = -2 V -5 -5 -10 -10 VGS = 0 V VGS = 0 V -15 -15 (A) IDS (A) IDS Figure 9. 3rd quadrant characteristics @ TJ = -50 °C VDS(V) GIPD311020141343FSR -4 -5 -3 -2 -1 0 1 VGS = 0 V 0 Figure 10. 3rd quadrant characteristics @ TJ = 25 °C GIPD311020141352FSR VDS(V) -3 -4 -5 VGS = 5 V 0 0 -10 VGS = 5 V -20 -20 VGS = 10 V VGS = 10 V -30 -30 VGS = 15 V VGS = 15 V -40 TJ = -50 °C VGS = 20 V GIPD311020141405FSR -4 -3 TJ = 25 °C VGS = 20 V (A) ID Figure 11. 3rd quadrant characteristics @ TJ = 150 °C -5 -1 VGS = 0 V -10 VDS(V) -2 -2 -1 0 0 -40 (A) ID Figure 12. Normalized gate threshold vs. temperature GIPD311020141411FSR VGS(th) (norm) ID = 1 mA VGS = 0 V -10 VGS = 5 V VGS = 10 V -20 1.2 1.0 VGS = 15 V -30 TJ = 150 °C VGS = 20 V DS13094 - Rev 2 -40 (A) ID 0.8 0.6 0.4 -50 0 50 100 150 Tj(°C) page 6/16 SCT20N120H Electrical characteristics (curves) Figure 13. Normalized RDS(on) vs. temperature GIPD051120141148FSR RDS(on) (norm) Figure 14. Capacitances variation GIPD311020141419FSR C (pF) 1.15 VGS = 20 V 1000 1.10 Ciss 1.05 100 1.00 0.95 10 Coss Crss f = 1 MHz 0.90 0.85 25 DS13094 - Rev 2 50 75 100 125 150 175 Tj(°C) 1 0.1 1 10 100 VDS(V) page 7/16 SCT20N120H Test circuits 3 Test circuits Figure 15. Switching test waveforms for transition times Figure 16. Clamped inductive switching waveform t Off t On V DS t d (On) t d (Off) tf VDS On tr 90% 90% 10% VGS On V GS VGS Off GIPD101020141511FSR DS13094 - Rev 2 V DS Off 10% 90% 10% GIPD101020141502FSR page 8/16 SCT20N120H Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. DS13094 - Rev 2 page 9/16 SCT20N120H H²PAK-2 package information 4.1 H²PAK-2 package information Figure 17. H²PAK-2 package outline 8159712_8 DS13094 - Rev 2 page 10/16 SCT20N120H H²PAK-2 package information Table 8. H²PAK-2 package mechanical data Dim. mm Min. Typ. Max. A 4.30 4.70 A1 0.03 0.20 C 1.17 1.37 e 4.98 5.18 E 0.50 0.90 F 0.78 0.85 H 10.00 10.40 H1 7.40 L 15.30 L1 1.27 1.40 L2 4.93 5.23 L3 6.85 7.25 L4 1.5 1.7 M 2.6 2.9 R 0.20 0.60 V 0° 8° - 7.80 15.80 Figure 18. H²PAK-2 recommended footprint 8159712_8 Note: DS13094 - Rev 2 Dimensions are in mm. page 11/16 SCT20N120H Packing information 4.2 Packing information Figure 19. Tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F K0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 DS13094 - Rev 2 page 12/16 SCT20N120H Packing information Figure 20. Reel outline T REEL DIMENSIONS 40 mm min. Access hole At slot location B D C N A G measured Tape slot In core for Full radius At hub Tape start Table 9. Tape and reel mechanical data Tape Dim. DS13094 - Rev 2 Reel mm mm Dim. Min. Max. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 330 13.2 26.4 30.4 page 13/16 SCT20N120H Revision history Table 10. Document revision history DS13094 - Rev 2 Date Revision 11-Sep-2019 1 13-Dec-2019 2 Changes First release. Updated features in cover page, Table 1. Absolute maximum ratings and On/off states. Minor text changes. page 14/16 SCT20N120H Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 4.1 H²PAK-2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.2 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 DS13094 - Rev 2 page 15/16 SCT20N120H IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS13094 - Rev 2 page 16/16