SCT30N120

SCT30N120 Silicon carbide Power MOSFET 1200 V, 45 A, 90 mΩ (typ., TJ = 150 °C) in an HiP247™ package Datasheet - production data Features     Very tight variation of on-resistance vs. temperature Very high operating junction temperature capability (TJ = 200 °C) Very fast and robust intrinsic body diode Low capacitance Applications Figure 1: Internal schematic diagram     Solar inverters, UPS Motor drives High voltage DC-DC converters Switch mode power supply Description D(2, TAB) G(1) S(3) AM01475v1_noZen This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for highefficiency and high power density applications. Table 1: Device summary Order code Marking Package Packaging SCT30N120 SCT30N120 HiP247™ Tube May 2017 DocID023109 Rev 11 This is information on a product in full production. 1/13 www.st.com Contents SCT30N120 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 3 Package information ..................................................................... 10 3.1 4 2/13 Electrical characteristics (curves) ...................................................... 6 HiP247 package information ........................................................... 10 Revision history ............................................................................ 12 DocID023109 Rev 11 SCT30N120 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 1200 V VGS Gate-source voltage -10 to 25 V ID Drain current (continuous) at TC = 25 °C (limited by die) 45 A ID Drain current (continuous) at TC = 25 °C (limited by package) 40 A ID Drain current (continuous) at TC = 100 °C 34 A IDM(1) Drain current (pulsed) 90 A PTOT Total dissipation at TC = 25 °C 270 W Tstg Storage temperature range Tj Operating junction temperature range -55 to 200 °C °C Notes: (1)Pulse width limited by safe operating area. Table 3: Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient DocID023109 Rev 11 Value Unit 0.65 °C/W 40 °C/W 3/13 Electrical characteristics 2 SCT30N120 Electrical characteristics (TCASE = 25 °C unless otherwise specified). Table 4: On/off states Symbol Parameter VDS = 1200 V; VGS = 0 V 1 IDSS Zero gate voltage drain current VDS = 1200 V, VGS = 0 V, TJ = 200 °C 50 IGSS Gate-body leakage current VDS = 0 V; VGS = -10 to 22 V Gate threshold voltage VDS = VGS, ID = 1 mA VGS(th) RDS(on) Test conditions Static drain-source on- resistance Min. Typ. Max. 25 µA µA ±100 1.8 Unit 3.5 nA V 100 mΩ VGS = 20 V, ID = 20 A 80 VGS = 20 V, ID = 20 A, TJ = 150 °C 90 mΩ VGS = 20 V, ID = 20 A, TJ = 200 °C 100 mΩ Table 5: Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Min. Typ. Max. Unit - 1700 - pF - 130 - pF - 25 - pF - 105 - nC - 16 - nC - 40 - nC - 5 - Ω Min. Typ. Max. Unit VDD = 800 V, ID = 20 A, RG = 6.8 Ω, VGS = -2 to 20 V - 500 - µJ - 350 - µJ VDD = 800 V, ID = 20 A, RG = 6.8 Ω, VGS = -2 to 20 V TJ = 150 °C - 500 - µJ - 400 - µJ VDS = 400 V, f = 1 MHz, VGS = 0 V VDD = 800 V, ID = 20 A, VGS = 0 to 20 V Qgs Gate-source charge Qgd Gate-drain charge Rg Gate input resistance f=1 MHz open drain Table 6: Switching energy (inductive load) Symbol Parameter Test conditions Eon Turn-on switching energy Eoff Turn-off switching energy Eon Turn-on switching energy Eoff Turn-off switching energy Table 7: Switching times Symbol td(on) tf td(off) tr 4/13 Parameter Test conditions Turn-on delay time Fall time Turn-off delay time VDD = 800 V, ID = 20 A, RG = 0 Ω, VGS = 0 to 20 V Rise time DocID023109 Rev 11 Min. Typ. Max. Unit - 19 - ns - 28 - ns - 45 - ns - 20 - ns SCT30N120 Electrical characteristics Table 8: Reverse SiC diode characteristics Symbol Parameter Test conditions VSD Diode forward voltage trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current IF = 10 A, VGS = 0 V ISD = 20 A, di/dt = 100 A/µs VDD = 800 V DocID023109 Rev 11 Min Typ. Max Unit - 3.5 - V - 140 - 140 - nC - 2 - A ns 5/13 Electrical characteristics 2.1 SCT30N120 Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics (TJ = 25 °C) Figure 5: Output characteristics (TJ = 150 °C) Figure 6: Output characteristics (TJ = 200 °C) Figure 7: Transfer characteristics 6/13 DocID023109 Rev 11 SCT30N120 Electrical characteristics Figure 8: Power dissipation Figure 9: Gate charge vs gate-source voltage Figure 10: Capacitance variations Figure 11: Switching energy vs. drain current Figure 12: Switching energy vs. junction temperature Figure 13: Normalized V(BR)DSS vs. temperature DocID023109 Rev 11 7/13 Electrical characteristics SCT30N120 Figure 14: Normalized gate threshold voltage vs. temperature Figure 15: Normalized on-resistance vs. temperature Figure 16: Body diode characteristics (TJ = -50 °C) Figure 17: Body diode characteristics (TJ = 25 °C) Figure 18: Body diode characteristics (TJ = 150 °C) Figure 19: 3rd quadrant characteristics (TJ = -50 °C) 8/13 DocID023109 Rev 11 SCT30N120 Electrical characteristics Figure 20: 3rd quadrant characteristics (TJ = 25 °C) Figure 21: 3rd quadrant characteristics (TJ = 150 °C) VDS (V) -6 -5 -4 -3 -2 -1 0 1 0 5V -10 VGS=0V 10V -20 20V -30 -40 15V 180220151648 DocID023109 Rev 11 ID(A) 9/13 Package information 3 SCT30N120 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 3.1 HiP247 package information Figure 22: HiP247™ package outline 10/13 DocID023109 Rev 11 SCT30N120 Package information Table 9: HiP247™ package mechanical data mm Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 5.45 5.60 18.50 ØP 3.55 ØR 4.50 S 5.30 DocID023109 Rev 11 3.65 5.50 5.50 5.70 11/13 Revision history 4 SCT30N120 Revision history Table 10: Document revision history 12/13 Date Revision Changes 10-May-2012 1 First release 21-May-2013 2 Updated trr value in Table8. Updated dynamic parameters in Table5, VGS(th) in Table4 and Eon in Table6. 24-Jun-2013 3 Document status promoted from target to preliminary data. Added: Section2.1: Electrical characteristics (curves) 11-Jul-2013 4 Updated Figure6: Output characteristics (TJ=200°C) and Figure7: Transfer characteristics. 18-Dec-2013 5 Updated parameters in Table2: Absolute maximum ratings and Table4: On/off states. 27-May-2014 6 Added Table7: Switching times. Updated Section3: Package mechanical data. Minor text changes. 25-Sep-2014 7 Document status promoted from preliminary to production data. 17-Feb-2015 8 Updated title in cover page. 20-Feb-2015 9 Updated Section2.1: Electrical characteristics (curves). 24-Jul-2016 10 Updated title and features in cover page. Updated Figure 2: "Safe operating area" and Figure 3: "Thermal impedance". Minor text changes. 11-May-2017 11 Updated Table 4: "On/off states" and Section 2.1: "Electrical characteristics (curves)". Minor text changes. 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All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved DocID023109 Rev 11 13/13