SCT50N120

SCT50N120 Silicon carbide Power MOSFET 1200 V, 65 A, 59 mΩ (typ., TJ=150 °C) in an HiP247™ package Datasheet - production data Features     Very tight variation of on-resistance vs. temperature Very high operating junction temperature capability (TJ = 200 °C) Very fast and robust intrinsic body diode Low capacitance Applications Figure 1: Internal schematic diagram     Solar inverters, UPS Motor drives High voltage DC-DC converters Switch mode power supplies Description This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. D(2, TAB) G(1) S(3) AM01475v1_noZen Table 1: Device summary Order code Marking Package Packaging SCT50N120 SCT50N120 HiP247™ Tube April 2017 DocID027989 Rev 4 This is information on a product in full production. 1/11 www.st.com Contents SCT50N120 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 3 Package information ....................................................................... 8 3.1 4 2/11 Electrical characteristics (curves) ...................................................... 5 HiP247™ package information.......................................................... 8 Revision history ............................................................................ 10 DocID027989 Rev 4 SCT50N120 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 1200 V VGS Gate-source voltage -10 to 25 V ID Drain current (continuous) at TC = 25 °C 65 A ID Drain current (continuous) at TC = 100 °C 50 A IDM(1) Drain current (pulsed) 130 A PTOT Total dissipation at TC = 25 °C 318 W Tstg Storage temperature range Tj Operating junction temperature range -55 to 200 °C °C Notes: (1)Pulse width limited by safe operating area. Table 3: Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient DocID027989 Rev 4 Value Unit 0.55 °C/W 40 °C/W 3/11 Electrical characteristics 2 SCT50N120 Electrical characteristics (TCASE = 25 °C unless otherwise specified). Table 4: On/off states Symbol Parameter Test conditions Typ. Max. Unit VDS = 1200 V, VGS = 0 V 1 100 µA VDS = 1200 V, VGS = 0 V, TJ = 200 °C 10 IDSS Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = -10 to 22 V Gate threshold voltage VDS = VGS, ID = 1 mA VGS(th) RDS(on) Static drain-source on-resistance Min. 1.8 µA ±100 nA 69 mΩ 3.0 V VGS = 20 V, ID = 40 A 52 VGS = 20 V, ID = 40 A, TJ = 150 °C 59 mΩ VGS = 20 V, ID = 40 A, TJ = 200 °C 70 mΩ Table 5: Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Test conditions Min. Typ. Max. Unit - 1900 - pF - 170 - pF - 30 - pF - 122 - nC - 19 - nC - 35 - nC - 1.9 - Ω Min. Typ. Max. Unit VDD = 800 V, ID = 40 A RG= 2.2 Ω, VGS = -5 to 20 V - 530 - µJ - 310 - µJ VDD = 800 V, ID = 40 A RG= 2.2 Ω, VGS = -5 to 20 V TJ= 150 °C - 670 - µJ - 334 - µJ Min Typ. Max Unit - 3.5 - V - 55 - 230 - nC - 14 - A VDS = 400 V, f = 1 MHz, VGS = 0 V Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Rg Gate input resistance VDD = 800 V, ID = 40 A, VGS = 0 to 20 V f=1 MHz open drain Table 6: Switching energy (inductive load) Symbol Parameter Test conditions Eon Turn-on switching energy Eoff Turn-off switching energy Eon Turn-on switching energy Eoff Turn-off switching energy Table 7: Reverse SiC diode characteristics Symbol 4/11 Parameter Test conditions VSD Diode forward voltage trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current IF = 20 A, VGS = 0 V IF = 40 A, di/dt = 2000/ns VDD = 800 V DocID027989 Rev 4 ns SCT50N120 2.1 Electrical characteristics Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics (TJ= 25 °C) Figure 5: Output characteristics (TJ= 150 °C) Figure 6: Output characteristics (TJ= 200 °C) Figure 7: Transfer characteristics DocID027989 Rev 4 5/11 Electrical characteristics 6/11 SCT50N120 Figure 8: Power dissipation Figure 9: Gate charge vs gate-source voltage Figure 10: Capacitance variations Figure 11: Switching energy vs. drain current Figure 12: Switching energy vs. junction temperature Figure 13: Normalized V(BR)DSS vs. temperature DocID027989 Rev 4 SCT50N120 Electrical characteristics Figure 14: Normalized gate threshold voltage vs. temperature Figure 15: Normalized on-resistance vs. temperature Figure 16: Reverse conduction characteristics (TJ = -50 °C) Figure 17: Reverse conduction characteristics (TJ = 25 °C) Figure 18: Reverse conduction characteristics (TJ = 150 °C) DocID027989 Rev 4 7/11 Package information 3 SCT50N120 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 3.1 HiP247™ package information Figure 19: HiP247™ package outline 8/11 DocID027989 Rev 4 SCT50N120 Package information Table 8: HiP247™ package mechanical data mm Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 5.45 5.60 18.50 ØP 3.55 ØR 4.50 S 5.30 DocID027989 Rev 4 3.65 5.50 5.50 5.70 9/11 Revision history 4 SCT50N120 Revision history Table 9: Document revision history Date Revision 17-Jun-2015 1 First release 12-May-2016 2 Modified title. Modified: Table 2: "Absolute maximum ratings", Table 4: "On/off states", Table 5: "Dynamic", Table 6: "Switching energy (inductive load)", and Table 7: "Reverse SiC diode characteristics". Added: Section 4.1: "Electrical characteristics (curves)". Minor text changes. 23-Jun-2016 3 Document status promoted from preliminary to production data. 4 Modified Table 7: "Reverse SiC diode characteristics" Modified Figure 7: "Transfer characteristics", Figure 15: "Normalized on-resistance vs. temperature", Figure 16: "Reverse conduction characteristics (TJ = -50 °C)", Figure 17: "Reverse conduction characteristics (TJ = 25 °C)" and Figure 18: "Reverse conduction characteristics (TJ = 150 °C)" Updated Section 3: "Package information" Minor text changes. 03-Apr-2017 10/11 Changes DocID027989 Rev 4 SCT50N120 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved DocID027989 Rev 4 11/11