SCTH35N65G2V-7AG
Datasheet
Automotive-grade silicon carbide Power MOSFET, 650 V, 55 mΩ typ., 45 A in an
H2PAK-7 package
Features
TAB
7
1
H 2PAK-7
•
•
•
•
Order code
VDS
RDS(on) max.
ID
SCTH35N65G2V-7AG
650 V
67 mΩ
45 A
AEC-Q101 qualified
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency
Drain (TAB)
Applications
•
•
•
Gate (1)
Main inverter (electric traction)
DC/DC converter for EV/HEV
On board charger (OBC)
Driver
source (2)
Power
source (3, 4, 5, 6, 7)
N-chG1DS2PS34567DTAB
Description
This silicon carbide Power MOSFET device has been developed using ST’s
advanced and innovative 2nd generation SiC MOSFET technology. The device
features remarkably low on-resistance per unit area and very good switching
performance. The variation of switching loss is almost independent of junction
temperature.
Product status link
SCTH35N65G2V-7AG
Product summary
Order code
SCTH35N65G2V-7AG
Marking
35N65AG
Package
H²PAK-7
Packing
Tape and reel
DS12029 - Rev 5 - January 2021
For further information contact your local STMicroelectronics sales office.
www.st.com
SCTH35N65G2V-7AG
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
VDS
VGS
Parameter
Value
Unit
Drain-source voltage
650
V
Gate-source voltage
-10 to 22
Gate-source voltage (recommended operating range)
-5 to 18
V
Drain current (continuous) at TC = 25 °C
45
Drain current (continuous) at TC = 100 °C
35
IDM(1)
Drain current (pulsed)
90
A
PTOT
Total power dissipation at TC = 25 °C
208
W
Tstg
Storage temperature range
ID
TJ
Operating junction temperature range
-55 to 175
A
°C
°C
1. Pulse width is limited by safe operating area.
Table 2. Thermal data
Symbol
DS12029 - Rev 5
Parameter
Value
Unit
RthJC
Thermal resistance, junction-to-case
0.72
°C/W
RthJA
Thermal resistance, junction-to-ambient
62.5
°C/W
page 2/15
SCTH35N65G2V-7AG
Electrical characteristics
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 3. On/off states
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source breakdown voltage
VGS = 0 V, ID = 1 mA
IDSS
Zero gate voltage drain current
VGS = 0 V, VDS = 650 V
IGSS
Gate-body leakage current
VDS = 0 V, VGS = -10 to 22 V
Gate threshold voltage
VDS = VGS, ID = 1 mA
VGS(th)
RDS(on)
Static drain-source on-resistance
Min.
Typ.
Max.
650
Unit
V
5
µA
±100
nA
3.2
5
V
VGS = 20 V, ID = 20 A
45
67
VGS = 18 V, ID = 20 A
55
VGS = 20 V, ID = 20 A, TJ = 175 °C
65
1.8
mΩ
Table 4. Dynamic, based on HiP247 package option
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
-
1370
-
pF
-
125
-
pF
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
-
30
-
pF
Qg
Total gate charge
-
73
-
nC
Qgs
Gate-source charge
-
14
-
nC
Qgd
Gate-drain charge
-
27
-
nC
Rg
Gate input resistance
-
2
-
Ω
VDS = 400 V, f = 1 MHz, VGS = 0 V
VDD = 400 V, VGS = 0 to 20 V, ID = 20 A
f = 1 MHz, ID = 0 A
Table 5. Switching energy (inductive load), based on HiP247 package option
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Eon
Turn-on switching energy
VDD = 400 V, ID = 20 A
-
100
-
µJ
Eoff
Turn-off switching energy
RG = 10 Ω, VGS = -5 to 20 V
-
35
-
µJ
Min.
Typ.
Max.
Unit
-
16
-
Table 6. Switching times, based on HiP247 package option
Symbol
td(on)
tf
td(off)
tr
DS12029 - Rev 5
Parameter
Test conditions
Turn-on delay time
Fall time
VDD = 400 V, ID = 20 A,
-
14
-
Turn-off delay time
RG = 4.7 Ω, VGS = -5 to 20 V
-
35
-
-
9
-
Rise time
ns
page 3/15
SCTH35N65G2V-7AG
Electrical characteristics
Table 7. Reverse SiC diode characteristics
Symbol
DS12029 - Rev 5
Parameter
VSD
Diode forward voltage
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
Test conditions
IF = 20 A, VGS = 0 V
VDD = 400 V, IF = 20 A, di/dt = 1000 A/μs
Min.
Typ.
Max.
Unit
-
3.3
-
V
-
18
-
ns
-
85
-
nC
-
7
-
A
page 4/15
SCTH35N65G2V-7AG
Electrical characteristics (curves), based on HiP247 package option
2.1
Electrical characteristics (curves), based on HiP247 package option
Figure 2. Thermal impedance
Figure 1. Safe operating area
ID
(A)
K
GADG140220171448SOA
GADG140220171449ZTH
Operation in this area
is limited by RDS(on)
10 1
tp =100 µs
single pulse
10 -1
tp =1 ms
TC = 25 °C,
TJ ≤ 175 °C,
single pulse
10 0
10 -1
10 -1
10 0
tp =10 ms
10 1
VDS (V)
10 2
Figure 3. Output characteristics (TJ= 25 °C)
ID
(A)
SIC140220171450OC25
VGS = 20 V
80
VGS = 14 V
VGS = 16 V
10 -2
10 -5
10 -4
10 -3
10 -2
10 -1
tp (s)
Figure 4. Output characteristics (TJ= 175 °C)
ID
(A)
SIC140220171450OC175
VGS = 20 V
VGS = 16 V
VGS = 14 V
80
VGS = 12 V
VGS = 12 V
60
60
40
VGS = 10 V
40
VGS = 8 V
VGS = 10 V
20
20
VGS = 8 V
0
0
VGS = 6 V
2
4
6
8
10
12
VDS (V)
VGS = 6 V
0
0
Figure 5. Transfer characteristics
ID
(A)
GADG140220171450TCH
VDS = 10 V
80
2
4
6
8
10
12
VDS (V)
Figure 6. Total power dissipation
PTOT
(W)
SIC140220171451PDT
200
TJ ≤ 175 °C
160
60
40
120
TJ = 175 °C
TJ = 25 °C
80
20
0
0
DS12029 - Rev 5
40
4
8
12
16
VGS (V)
0
0
50
100
150
TC (°C)
page 5/15
SCTH35N65G2V-7AG
Electrical characteristics (curves), based on HiP247 package option
Figure 7. Gate charge vs gate-source voltage
VGS
(V)
Figure 8. Capacitance variations
C
(pF)
GADG140220171452QVG
GADG140220171452CVR
20
16
12
CISS
10 3
VDD = 400 V
ID = 20 A
10 2
8
COSS
f = 1 MHz
4
0
0
CRSS
10
20
30
40
50
60
70
Qg (nC)
Figure 9. Switching energy vs. drain current
E
(μJ)
SIC140220171454SLC
Etot
VDD = 400 V,
RG = 4.7 Ω,
VGS = -5 to 20 V
1000
10 1
10 -1
10 0
10 1
10 2
VDS (V)
Figure 10. Switching energy vs. junction temperature
E
(μJ)
SIC140220171455SLT
140
Etot
120
800
100
Eon
Eon
600
80
Eoff
400
60
VDD = 400 V, RG = 4.7 Ω,
ID = 20 A, VGS = -5 to 20 V
40
200
Eoff
20
0
0
20
40
60
ID (A)
Figure 11. Normalized V(BR)DSS vs. temperature
V(BR)DSS
(norm.)
GADG140220171455BDV
1.06
ID = 1 mA
0
0
50
100
150
TJ (°C)
Figure 12. Normalized gate threshold voltage vs.
temperature
VGS(th)
(norm.)
GADG140220171458VTH
1.4
ID = 1 mA
1.04
1.2
1.02
1.0
1.00
0.98
0.8
0.96
0.6
0.94
-75
DS12029 - Rev 5
-25
25
75
125
175
TJ (°C)
0.4
-75
-25
25
75
125
175
TJ (°C)
page 6/15
SCTH35N65G2V-7AG
Electrical characteristics (curves), based on HiP247 package option
Figure 14. Reverse conduction characteristics (TJ= 25 °C)
Figure 13. Normalized on-resistance vs. temperature
RDS(on)
(norm.)
ID
(A)
GADG140220171458RON
VGS = 20 V
2.0
-20
1.5
-40
1.0
-60
0.5
-80
0.0
-75
-25
25
75
125
175
SIC140220171501RRT25
VGS = -5 V
VGS = -2 V
VGS = 0 V
VGS = 10 V
VGS = 5 V
-100
-7
TJ (°C)
-6
-5
-4
-3
-2
-1
VDS (V)
Figure 15. Reverse conduction characteristics (TJ= 175 °C)
ID
(A)
-20
SIC140220171502RRT175
VGS = -5 V
VGS = -2 V
VGS = 0 V
-40
VGS = 10 V
VGS = 5 V
-60
-80
-100
-7
DS12029 - Rev 5
-6
-5
-4
-3
-2
-1
VDS (V)
page 7/15
SCTH35N65G2V-7AG
Test circuits
3
Test circuits
Figure 16. Test circuit for resistive load switching times
Figure 17. Test circuit for gate charge behavior
VDD
12 V
2200
+ μF
3.3
μF
VDD
VD
VGS
1 kΩ
100 nF
RL
IG= CONST
VGS
RG
47 kΩ
+
pulse width
D.U.T.
2.7 kΩ
2200
μF
pulse width
D.U.T.
100 Ω
VG
47 kΩ
1 kΩ
AM01469v1
AM01468v1
Figure 18. Test circuit for inductive load switching and
diode recovery times
D
G
A
D.U.T.
S
25 Ω
A
L
A
VD
100 µH
fast
diode
B
B
B
3.3
µF
D
G
+
Figure 19. Unclamped inductive load test circuit
RG
1000
+ µF
2200
+ µF
VDD
3.3
µF
VDD
ID
D.U.T.
S
D.U.T.
Vi
_
pulse width
AM01471v1
AM01470v1
Figure 21. Switching time waveform
Figure 20. Unclamped inductive waveform
ton
V(BR)DSS
td(on)
toff
td(off)
tr
tf
VD
90%
90%
IDM
VDD
10%
0
ID
VDD
VGS
AM01472v1
0
VDS
10%
90%
10%
AM01473v1
DS12029 - Rev 5
page 8/15
SCTH35N65G2V-7AG
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
4.1
H²PAK-7 package information
Figure 22. H²PAK-7 package outline
DM00249216_4
DS12029 - Rev 5
page 9/15
SCTH35N65G2V-7AG
H²PAK-7 package information
Table 8. H²PAK-7 package mechanical data
Dim.
mm
Min.
Max.
A
4.30
4.80
A1
0.03
0.20
C
1.17
1.37
e
2.34
2.74
e1
4.88
5.28
e2
7.42
7.82
E
0.45
0.60
F
0.50
0.70
H
10.00
10.40
H1
7.40
7.60
L
14.75
15.25
L1
1.27
1.40
L2
4.35
4.95
L3
6.85
7.25
M
1.90
2.50
R
0.20
0.60
V
0°
8°
Figure 23. H²PAK-7 recommended footprint
footprint_DM00249216_4
Note:
DS12029 - Rev 5
Dimensions are in mm.
page 10/15
SCTH35N65G2V-7AG
Packing information
4.2
Packing information
Figure 24. Tape outline
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
Top cover
tape
T
P2
D
E
F
W
K0
B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v2
Figure 25. Reel outline
T
REEL DIMENSIONS
40 mm min.
Access hole
At slot location
B
D
C
N
A
Tape slot
In core for
Full radius
DS12029 - Rev 5
Tape start
G measured
At hub
page 11/15
SCTH35N65G2V-7AG
Packing information
Table 9. Tape and reel mechanical data
Tape
Dim.
DS12029 - Rev 5
Reel
mm
mm
Dim.
Min.
Max.
Min.
Max.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base quantity
1000
P2
1.9
2.1
Bulk quantity
1000
R
50
T
0.25
0.35
W
23.7
24.3
330
13.2
26.4
30.4
page 12/15
SCTH35N65G2V-7AG
Revision history
Table 10. Document revision history
Date
Version
17-Feb-2017
1
Changes
First release.
Updated document title.
13-Dec-2017
2
Updated Table 4: "On/off states".
Minor text changes.
Datasheet promoted from preliminary data to production data.
13-Dec-2018
3
Modified title and features on cover page.
Minor text changes.
DS12029 - Rev 5
24-Jan-2020
4
11-Jan-2021
5
Updated Table 1. Absolute maximum ratings.
Minor text changes.
Updated Table 7. Reverse SiC diode characteristics.
Minor text changes.
page 13/15
SCTH35N65G2V-7AG
Contents
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1
Electrical characteristics (curves), based on HiP247 package option . . . . . . . . . . . . . . . . . . . 5
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.1
H²PAK-7 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.2
Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
DS12029 - Rev 5
page 14/15
SCTH35N65G2V-7AG
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© 2021 STMicroelectronics – All rights reserved
DS12029 - Rev 5
page 15/15