SCTH90N65G2V-7

SCTH90N65G2V-7 Datasheet Silicon carbide Power MOSFET 650 V, 116 A, 18 mΩ (typ., TJ = 25 °C) in an H²PAK‑7 package Features TAB 7 1 H 2PAK-7 Order code VDS RDS(on) max. ID SCTH90N65G2V-7 650 V 24 mΩ 116 A • Very high operating junction temperature capability (TJ = 175 °C) • • Very fast and robust intrinsic body diode Extremely low gate charge and input capacitances Applications Drain (TAB) • • • Switching applications Power supply for renewable energy systems High frequency DC-DC converters Gate (1) Description Driver source (2) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTAB This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. Product status link SCTH90N65G2V-7 Product summary Order code SCTH90N65G2V-7 Marking SCT90N65 Package H2PAK-7 Packing Tape and reel DS12084 - Rev 4 - July 2019 For further information contact your local STMicroelectronics sales office. www.st.com SCTH90N65G2V-7 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VDS VGS Parameter Value Unit Drain-source voltage 650 V Gate-source voltage -10 to 22 Gate-source voltage (recommended operating values) -5 to 18 V Drain current (continuous) at TC = 25 °C 116 Drain current (continuous) at TC = 100 °C 82 IDM(1) Drain current (pulsed) 220 A PTOT Total power dissipation at TC = 25 °C 484 W Tstg Storage temperature range ID TJ Operating junction temperature range -55 to 175 A °C °C 1. Pulse width is limited by safe operating area. Table 2. Thermal data Symbol DS12084 - Rev 4 Parameter Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient Value Unit 0.31 °C/W 40 °C/W page 2/14 SCTH90N65G2V-7 Electrical characteristics 2 Electrical characteristics (TC = 25 °C unless otherwise specified). Table 3. On/off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions VGS = 0 V, ID = 1 mA Min. Typ. 650 Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = -10 to 22 V VGS(th) Gate threshold voltage VDS = VGS, ID = 1 mA RDS(on) Static drain-source on-resistance 10 VDS = 650 V, VGS = 0 V, TJ = 150 °C Unit V VDS = 650 V, VGS = 0 V IDSS Max. 10 µA ±100 nA 3.2 5.0 V VGS = 18 V, ID = 50 A 18 24 VGS = 18 V, ID = 50 A, TJ = 175 °C 27 1.9 mΩ Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit - 3380 - pF - 294 - pF Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance - 49 - pF Qg Total gate charge - 157 - nC Qgs Gate-source charge - 43 - nC Qgd Gate-drain charge - 42 - nC Rg Gate input resistance - 1 - Ω Min. Typ. Max. Unit VDS = 400 V, f = 1 MHz, VGS = 0 V VDD = 400 V, ID = 50 A, VGS = -5 to 18 V f = 1 MHz, ID = 0 A Table 5. Switching energy (inductive load) Symbol DS12084 - Rev 4 Parameter Test conditions Eon Turn-on switching energy VGS = -5 to 18 V, VDD = 400 V, ID = 50 A, - 130 - Eoff Turn-off switching energy RG = 2.2 Ω - 210 - Eon Turn-on switching energy VGS = -5 to 18 V, VDD = 400 V, ID = 50 A, - 135 - Eoff Turn-off switching energy RG = 2.2 Ω, TC = 150 °C - 200 - µJ page 3/14 SCTH90N65G2V-7 Electrical characteristics Table 6. Switching times Symbol td(on) tf td(off) tr Parameter Test conditions Turn-on delay time Min. Typ. Max. Unit - 26 - ns Fall time VDD = 400 V, ID = 50 A, - 16 - ns Turn-off delay time RG = 2.2 Ω, VGS = -5 to 18 V - 58 - ns - 38 - ns Min. Typ. Max. Unit - 2.5 - V - 17 - ns - 308 - nC - 30 - A Rise time Table 7. Reverse SiC diode characteristics Symbol VSD DS12084 - Rev 4 Parameter Forward on voltage trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Test conditions IF = 30 A, VGS = 0 V IF = 50 A, di/dt = 4000 A/µs, VDD = 400 V page 4/14 SCTH90N65G2V-7 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area ID (A) Figure 2. Maximum transient thermal impedance ZthJ-C (°C/W) GADG170720191535SOA IDM a re TC = 25 °C TJ ≤ 175°C Single pulse 10 10 -1 0 10 10 0 10 1 VDS (V) 2 GADG110720191014OCH_-50 VGS =12V 60 ton 10 T 10 -6 10 -5 10 10 -4 10 -3 -2 10 -1 tp (s) Figure 4. Typical output characteristics (TJ = 25 °C) GADG120720191341OCH_25 VGS =16, 18, 20V VGS =14V VGS =12V 80 VGS =10V 60 40 40 VGS =10V 20 1 2 3 4 5 6 VGS = 8V VDS (V) Figure 5. Typical output characteristics (TJ = 175 °C) ID (A) VGS =14,16,18, 20V 0 0 1 2 3 4 5 6 VGS =6V VDS (V) Figure 6. Typical transfer characteristics GADG190720191145TCH 120 VGS =12V VGS =10V 100 VGS =8V 20 ID (A) GADG190720191144OCH_175 120 VDS = 3 V 100 80 80 VGS =8V 60 60 TJ = 175 °C TJ = 25 °C 40 40 20 0 0 duty = ton / T 100 VGS =14V 80 0 0 RthJ-C = 0.31 (°C/W) -4 120 VGS =16V 100 Single pulse 10 -3 ID (A) VGS = 18, 20V 120 0.01 tp =10ms Figure 3. Typical output characteristics (TJ = -50 °C) ID (A) 0.02 10 -2 tp =100µs RDS(on) max. tp =1ms DS12084 - Rev 4 0.2 0.1 0.05 n) tp =10µs V(BR)DSS DS 10 1 duty=0.5 10 -1 (o O is per lim ati ite on d in by th R is a 10 2 GADG170720191551ZTH VGS =6V 1 2 3 4 5 6 VDS (V) 20 0 0 4 8 12 16 VGS (V) page 5/14 SCTH90N65G2V-7 Electrical characteristics (curves) Figure 7. Typical capacitances C (pF) Figure 8. Typical gate charge VGS (V) GADG110720191017CVR CISS 15 GADG110720191018QVG VDD = 400 V ID = 50 A 10 3 10 COSS 5 10 2 f = 1 MHz CRSS 10 1 10 -1 10 0 10 1 10 2 VDS (V) Figure 9. Maximum total power dissipation PTOT (W) GADG190720191329PDT 500 0 -5 0 300 18 200 17 100 16 75 125 175 TC (°C) Figure 11. Normalized on-resistance vs temperature RDS(on) (norm.) 120 RDS(on) (mΩ) 19 25 90 150 Qg (nC) GADG110720191025RID 20 TJ = 175 °C -25 60 Figure 10. Typical drain-source on-resistance 400 0 -75 30 GADG190720191331RON 1.6 15 0 VGS = 18 V 20 40 60 80 100 ID (A) Figure 12. Normalized gate threshold voltage vs temperature VGS(th) (norm.) GADG190720191331VTH 1.4 VGS = 18 V 1.4 1.2 ID = 250 µA 1.0 1.2 0.8 1 0.6 0.8 -75 DS12084 - Rev 4 -25 25 75 125 175 TJ (°C) 0.4 -75 -25 25 75 125 175 TJ (°C) page 6/14 SCTH90N65G2V-7 Electrical characteristics (curves) Figure 13. Normalized breakdown voltage vs temperature V(BR)DSS (norm.) GADG190720191332BDV 1.06 E (µJ) VDD = 400 V VGS = -5 to 18 V 600 R = 2.2 Ω G GADG110720191040SDC Etot 500 ID = 1 mA 1.04 Figure 14. Typical switching energy vs drain current Eoff 400 1.02 300 1.00 0.98 100 0.96 -75 -25 25 75 125 175 TJ (°C) Figure 15. Typical switching energy vs temperature GADG190720191335SLT E (µJ) VDD = 400 V, ID = 50 A, VGS = -5 to 18 V, RG = 2.2 Ω 360 E tot 300 0 20 180 50 60 70 ID (A) GADG110720191046RCC_-50 ID (A) -20 -60 Eon -80 VGS =-3, -5V -100 60 -120 0 -25 25 75 125 175 TJ (°C) Figure 17. Typical reverse conduction characteristics (TJ = 25 °C) GADG110720191043RCC_25 ID (A) -20 -140 -6 VGS =0V VGS =5V VGS =10V -5 -4 -3 VGS =15V -2 -1 VDS (V) Figure 18. Typical reverse conduction characteristics (TJ = 150 °C) GADG110720191048RCC_150 ID (A) -20 VGS =-5, -3V -40 -60 -60 -80 -80 -100 VGS =15V VGS =0V VGS =5V -120 DS12084 - Rev 4 40 Figure 16. Typical reverse conduction characteristics (TJ = -50 °C) Eoff 120 -140 -6 30 -40 240 -40 Eon 200 -5 -4 -3 -1 -100 VGS =0V VGS =5V -120 VGS =10V -2 VGS =-3, -5V VDS (V) -140 -6 VGS =15V VGS =10V -5 -4 -3 -2 -1 VDS (V) page 7/14 SCTH90N65G2V-7 Package information 3 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 3.1 H²PAK-7 package information Figure 19. H²PAK-7 package outline DM00249216_4 DS12084 - Rev 4 page 8/14 SCTH90N65G2V-7 H²PAK-7 package information Table 8. H²PAK-7 package mechanical data Dim. mm Min. Max. A 4.30 4.80 A1 0.03 0.20 C 1.17 1.37 e 2.34 2.74 e1 4.88 5.28 e2 7.42 7.82 E 0.45 0.60 F 0.50 0.70 H 10.00 10.40 H1 7.40 7.60 L 14.75 15.25 L1 1.27 1.40 L2 4.35 4.95 L3 6.85 7.25 M 1.90 2.50 R 0.20 0.60 V 0° 8° Figure 20. H²PAK-7 recommended footprint footprint_DM00249216_4 Note: DS12084 - Rev 4 Dimensions are in mm. page 9/14 SCTH90N65G2V-7 Packing information 3.2 Packing information Figure 21. Tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F K0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 DS12084 - Rev 4 page 10/14 SCTH90N65G2V-7 Packing information Figure 22. Reel outline T REEL DIMENSIONS 40 mm min. Access hole At slot location B D C N A G measured Tape slot In core for Full radius At hub Tape start Table 9. Tape and reel mechanical data Tape Dim. DS12084 - Rev 4 Reel mm mm Dim. Min. Max. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 330 13.2 26.4 30.4 page 11/14 SCTH90N65G2V-7 Revision history Table 10. Document revision history Date Revision 30-Mar-2017 1 Changes First release Updated cover page. 28-Jun-2018 2 Updated Section 2 Electrical characteristics and Section 3 Package information. Minor text changes. Updated title and features on cover page. Updated Table 1. Absolute maximum ratings. 22-Jan-2019 3 Updated Section 2 Electrical characteristics and Section 2.1 Electrical characteristics (curves). Minor text changes. Updated Section 1 Electrical ratings. 19-Jul-2019 4 Updated Section 2 Electrical characteristics and Section 2.1 Electrical characteristics (curves). Minor text changes. DS12084 - Rev 4 page 12/14 SCTH90N65G2V-7 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 3 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3.1 H²PAK-7 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3.2 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 DS12084 - Rev 4 page 13/14 SCTH90N65G2V-7 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS12084 - Rev 4 page 14/14