SCTW100N65G2AG

SCTW100N65G2AG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 100 A in an HiP247 package Features 2 1 3 HiP247 • • • • Order code VDS RDS(on) max. ID SCTW100N65G2AG 650 V 26 mΩ 100 A AEC-Q101 qualified Very fast and robust intrinsic body diode Extremely low gate charge and input capacitance Very high operating junction temperature capability (TJ = 200 °C) Applications D(2, TAB) • • • G(1) Main inverter (electric traction) DC/DC converter for EV/HEV On board charger (OBC) Description S(3) AM01475v1_noZen This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. Product status link SCTW100N65G2AG Device summary Order code SCTW100N65G2AG Marking SCT100N65G2AG Package HiP247 Packing Tube DS11643 - Rev 4 - September 2021 For further information contact your local STMicroelectronics sales office. www.st.com SCTW100N65G2AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VDS VGS Parameter Value Unit Drain-source voltage 650 V Gate-source voltage -10 to 22 Gate-source voltage (recommended operational values) -5 to 18 V Drain current (continuous) at TC = 25 °C 100 Drain current (continuous) at TC = 100 °C 70 IDM(1) Drain current (pulsed) 280 A PTOT Total power dissipation at TC = 25 °C 420 W Tstg Storage temperature range ID TJ Operating junction temperature range -55 to 200 A °C °C 1. Pulse width limited by safe operating area. Table 2. Thermal data Symbol DS11643 - Rev 4 Parameter RthJC Thermal resistance, junction-to-case RthJA Thermal resistance, junction-to-ambient Value Unit 0.42 °C/W 40 °C/W page 2/11 SCTW100N65G2AG Electrical characteristics 2 Electrical characteristics (TC = 25 °C unless otherwise specified). Table 3. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA IDSS Zero gate voltage drain current VDS = 650 V, VGS = 0 V IGSS Gate-body leakage current VDS = 0 V, VGS = -10 to 22 V VGS(th) Gate threshold voltage VDS = VGS, ID = 1 mA RDS(on) Static drain-source on-resistance Min. Typ. Max. 650 Unit V 10 µA ±100 nA 3.1 5.0 V VGS = 18 V, ID = 50 A 20 26 VGS = 18 V, ID = 50 A, TJ = 200 °C 36 1.9 mΩ Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit - 3315 - pF - 267 - pF Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance - 46 - pF Qg Total gate charge - 162 - nC Qgs Gate-source charge - 45 - nC Qgd Gate-drain charge - 49 - nC Rg Gate input resistance - 1 - Ω Min. Typ. Max. Unit VDS = 520 V, f = 1 MHz, VGS = 0 V VDS = 520 V, VGS = -5 to 18 V, ID = 50 A f = 1 MHz, ID = 0 A Table 5. Switching energy Symbol Parameter Test conditions Eon Turn-on switching energy VDD = 520 V, ID = 50 A, - 486 - µJ Eoff Turn-off switching energy RG = 10 Ω, VGS = -5 to 18 V - 506 - µJ Min. Typ. Max. Unit - 2.8 - V - 26 - ns - 370 - nC - 24 - A Table 6. Reverse SiC diode characteristics Symbol DS11643 - Rev 4 Parameter VSD Diode forward voltage trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Test conditions IF = 50 A, VGS = 0 V IF = 50 A, di/dt = 2140 A/µs, VDD = 520 V, RG = 10 Ω, VGS = -5 to 18 V page 3/11 SCTW100N65G2AG Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 2. Thermal impedance Figure 1. Safe operating area ID (A) K GIPG190920180944SOA Operation in this area is limited by R DS(on) GIPG021020181227ZTH 10 2 tp =10 µs tp =100 µs 10 1 10-1 0.05 tp =1 ms tp =10 ms TJ≤200 °C TC=25 °C VGS=10 V single pulse 10 0 10 -1 10 0 10 1 VDS (V) 10 2 Figure 3. Output characteristics (TJ = 25 °C) ID (A) VGS = 18, 20 V 10 -4 10 -3 10 -2 10 -1 10 0 tp (s) Figure 4. Output characteristics (TJ = 200 °C) GIPG190920181010OCH_200 ID (A) VGS = 10 V, 12 V, 14 V, 16 V, 18 V, 20 V GIPG190920181009OCH_25 16V 14V 160 10-2 10 -5 160 12V 120 120 VGS =8 V 10V 80 80 40 40 VGS =6 V 8V 0 0 6V 2 4 6 8 VDS (V) 0 0 Figure 5. Transfer characteristics ID (A) 200 GIPG190920181010TCH VDS = 4 V 8 VDS (V) Figure 6. Total power dissipation PTOT (W) 400 GIPG021020181228PD TJ= 200 °C 250 200 150 TJ = 200 ℃ 100 40 DS11643 - Rev 4 6 300 TJ = 25 ℃ 120 0 0 4 350 160 80 2 50 4 8 12 16 VGS (V) 0 -50 0 50 100 150 TC(°C) page 4/11 SCTW100N65G2AG Electrical characteristics (curves) Figure 7. Gate charge vs gate-source voltage VGS (V) 16 GIPG021020181232QVG Figure 8. Capacitance variations C (pF) GIPG190920181024CVR VDD = 520 V ID = 50 A Ciss 12 103 8 Coss 4 102 0 f = 1 MHz Crss -4 -8 0 30 60 90 120 150 Qg (nC) Figure 9. Normalized V(BR)DSS vs. temperature V(BR)DSS (norm.) GIPG021020181229BDV 101 10-1 100 101 VDS (V) 102 Figure 10. Normalized gate threshold voltage vs. temperature VGS(th) (norm.) GIPG190920181013VTH 1.4 1.06 1.2 1.04 1.0 1.02 0.8 1.00 0.6 0.98 -75 -25 25 75 125 175 TJ (°C) Figure 11. Normalized on-resistance vs. temperature RDS(on) (norm.) 1.8 GIPG021020181230RON 0.4 -75 -25 25 75 125 175 TJ (°C) Figure 12. Switching energy vs drain current E (μJ) VGS = 18 V GADG190920181025SLC VDD = 520 V, RG = 10 Ω, VGS = -5 to 18 V Etot 1.6 2000 Eoff 1.4 1.2 1000 Eon 1.0 0.8 -75 DS11643 - Rev 4 -25 25 75 125 175 TJ (°C) 0 0 40 80 ID (A) page 5/11 SCTW100N65G2AG Electrical characteristics (curves) Figure 13. Switching energy vs junction temperature E (μJ) IGBT190920181027SLT 1000 Figure 14. Switching energy vs gate resistance E (μJ) GADG041020180951SLG Etot VDD = 520 V, VGS = -5 to 18 V, ID = 50 A 1600 Etot 800 1200 600 Eoff Eon 400 200 0 0 800 50 100 150 200 TJ (°C) GIPG190920181021BDC_25 VGS= -10 V 0 4 -80 -80 VGS=10 V VGS= 0 V -160 DS11643 - Rev 4 -6 -5 -4 -3 -2 -1 VDS(V) 12 16 20 RG (Ω) IGBT161120181042BCD_200 ID (A) -40 -120 8 Figure 16. Body diode characteristics (TJ= 200 °C) -40 -200 -7 Eoff 400 VDD = 520 V, ID = 50 A, RG= 10 Ω,VGE = -5 to 18 V Figure 15. Body diode characteristics (TJ= 25 °C) ID (A) Eon VGS=10 V VGS=-10 V -120 VGS= 0 V -160 -200 -7 -6 -5 -4 -3 -2 -1 VDS(V) page 6/11 SCTW100N65G2AG Package information 3 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 3.1 HiP247 package information Figure 17. HiP247 package outline 8581091_4 DS11643 - Rev 4 page 7/11 SCTW100N65G2AG HiP247 package information Table 7. HiP247 package mechanical data Dim. Min. Typ. Max. A 4.85 5.00 5.15 A1 2.20 A2 1.90 b 1.00 1.40 b1 2.00 2.40 b2 3.00 3.40 c 0.40 0.80 D 19.85 20.00 20.15 E 15.45 15.60 15.75 E3 1.45 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 18.30 P 3.55 3.65 Q 5.65 5.95 S 5.30 aaa DS11643 - Rev 4 mm 2.60 2.00 2.10 1.65 5.45 18.50 5.60 18.70 5.50 5.70 0.04 0.10 page 8/11 SCTW100N65G2AG Revision history Table 8. Document revision history Date Revision 09-May-2016 1 Changes First release Modified features and applications on cover page. Modified Table 1. Absolute maximum ratings, Table 2. Thermal data, Table 3. On/off states, Table 4. Dynamic, Table 5. Switching energy and Table 6. Reverse SiC diode characteristics. 21-Nov-2018 2 Added Section 2.1 Electrical characteristics (curves). Updated Section 3.1 HiP247 package information. Minor text changes. 11-Sep-2020 3 Updated Section 2 Electrical characteristics. Modified RDS(on) value on cover page. Modified applications and description. 14-Sep-2021 4 Modified Table 2. Thermal data, Table 3. On/off states. Modified Figure 14. Switching energy vs gate resistance, Figure 15. Body diode characteristics (TJ= 25 °C) and Figure 16. Body diode characteristics (TJ= 200 °C). Updated HiP247 package. DS11643 - Rev 4 page 9/11 SCTW100N65G2AG Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 3 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3.1 HiP247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 DS11643 - Rev 4 page 10/11 SCTW100N65G2AG IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2021 STMicroelectronics – All rights reserved DS11643 - Rev 4 page 11/11