SCTW35N65G2V

SCTW35N65G2V Datasheet Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247 package Features 1 2 3 • • • Order code VDS RDS(on) max. ID SCTW35N65G2V 650 V 67 mΩ 45 A Very fast and robust intrinsic body diode Extremely low gate charge and input capacitance Very high operating junction temperature capability (TJ = 200°C) Applications HiP247 • • • D(2, TAB) Switching mode power supply DC-DC converters Industrial motor control Description G(1) S(3) AM01475v1_noZen This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. Product status link SCTW35N65G2V Product summary Order code SCTW35N65G2V Marking SCTW35N65G2V Package HiP247 Packing Tube DS12076 - Rev 5 - January 2021 For further information contact your local STMicroelectronics sales office. www.st.com SCTW35N65G2V Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VDS VGS Parameter Value Unit Drain-source voltage 650 V Gate-source voltage -10 to 22 Gate-source voltage (recommended operating range) -5 to 20 V Drain current (continuous) at TC = 25 °C 45 Drain current (continuous) at TC = 100 °C 35 IDM(1) Drain current (pulsed) 90 A PTOT Total power dissipation at TC = 25 °C 240 W Tstg Storage temperature range ID TJ Operating junction temperature range -55 to 200 A °C °C 1. Pulse width is limited by safe operating area. Table 2. Thermal data Symbol DS12076 - Rev 5 Parameter RthJC Thermal resistance, junction-to-case RthJA Thermal resistance, junction-to-ambient Value Unit 0.72 °C/W 40 °C/W page 2/12 SCTW35N65G2V Electrical characteristics 2 Electrical characteristics (TC = 25 °C unless otherwise specified). Table 3. On/off-states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA IDSS Zero gate voltage drain current VGS = 0 V, VDS = 650 V IGSS Gate-body leakage current VDS = 0 V, VGS = -10 to 22 V Gate threshold voltage VDS = VGS, ID = 1 mA VGS(th) RDS(on) Static drain-source on-resistance Min. Typ. Max. 650 Unit V 5 µA ±100 nA 3.2 5.0 V VGS = 20 V, ID = 20 A 45 67 VGS = 18 V, ID = 20 A 55 VGS = 20 V, ID = 20 A, TJ = 200 °C 68 1.8 mΩ Table 4. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Test conditions VGS = 0 V, VDS = 400 V, f = 1 MHz Rg Intrinsic gate resistance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge f = 1 MHz VDD = 400 V, ID = 20 A, VGS = 0 to 20 V Min. Typ. Max. Unit - 1370 - pF - 125 - pF - 30 - pF - 2 - Ω - 73 - nC - 14 - nC - 27 - nC Min. Typ. Max. Unit Table 5. Switching energy (inductive load) Symbol Parameter Test conditions Eon Turn-on switching energy VDD = 400 V, ID = 20 A, - 100 - µJ Eoff Turn-off switching energy RG = 4.7 Ω, VGS = -5 to 20 V - 35 - µJ Min. Typ. Max. Unit - 16 - ns Table 6. Switching times Symbol td(on) tf td(off) tr DS12076 - Rev 5 Parameter Test conditions Turn-on delay time Fall time VDD = 400 V, ID = 20 A, - 14 - ns Turn-off delay time RG = 4.7 Ω, VGS = -5 to 20 V - 35 - ns - 9 - ns Rise time page 3/12 SCTW35N65G2V Electrical characteristics Table 7. Reverse diode characteristics Symbol VSD DS12076 - Rev 5 Parameter Forward on voltage trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Test conditions VGS = 0 V, IF = 20 A, VDD = 400 V, IF = 20 A, di/dt = 1000 A/µs Min. Typ. Max. Unit - 3.3 - V - 18 - ns - 85 - nC - 7 - A page 4/12 SCTW35N65G2V Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 2. Thermal impedance Figure 1. Safe operating area ID (A) GADG270320171257SOA K GADG270320171310ZTH Operation in this area is limited by max. R DS(on) 10 1 tp =100 µs single pulse 10 -1 t p =1 ms 10 0 t p =10 ms T j ≤ 200 °C Tc = 25 °C single pulse 10 -1 10 -1 10 0 10 1 V DS (V) 10 2 Figure 3. Output characteristics (TJ= 25 °C) ID (A) 80 SIC140220171450OC25 VGS = 20 V VGS = 14 V VGS = 16 V 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) Figure 4. Output characteristics (TJ= 175 °C) ID (A) SIC140220171450OC175 VGS = 20 V VGS = 16 V VGS = 14 V 80 VGS = 12 V VGS = 12 V 60 60 40 40 VGS = 10 V VGS = 8 V VGS = 10 V 20 20 VGS = 8 V 0 0 VGS = 6 V 2 4 6 8 10 12 VDS (V) VGS = 6 V 0 0 Figure 5. Transfer characteristics ID (A) 4 6 PTOT (W) 10 12 VDS (V) GADG220120191057PDT 240 VDS = 10 V TJ = 200 °C 200 60 40 8 Figure 6. Total power dissipation GADG140220171450TCH 80 2 160 TJ = 175 °C 120 TJ = 25 °C 80 20 0 0 DS12076 - Rev 5 40 4 8 12 16 VGS (V) 0 -75 -25 25 75 125 175 TC (°C) page 5/12 SCTW35N65G2V Electrical characteristics (curves) Figure 7. Gate charge vs gate-source voltage VGS (V) Figure 8. Capacitance variations C (pF) GADG140220171452QVG GADG140220171452CVR 20 16 12 CISS 10 3 VDD = 400 V ID = 20 A 10 2 8 COSS f = 1 MHz 4 0 0 CRSS 10 20 30 40 50 60 70 Qg (nC) Figure 9. Switching energy vs drain current E (μJ) SIC140220171454SLC Etot VDD = 400 V, RG = 4.7 Ω, VGS = -5 to 20 V 1000 10 1 10 -1 10 0 10 1 10 2 VDS (V) Figure 10. Switching energy vs junction temperature E (μJ) SIC140220171455SLT 140 Etot 120 800 100 Eon Eon 600 80 Eoff 400 60 VDD = 400 V, RG = 4.7 Ω, ID = 20 A, VGS = -5 to 20 V 40 200 Eoff 20 0 0 20 40 60 ID (A) Figure 11. Normalized V(BR)DSS vs temperature V(BR)DSS (norm.) GADG220120191045BDV 1.06 ID = 1 mA 0 0 50 100 150 TJ (°C) Figure 12. Normalized gate threshold voltage vs temperature VGS(th) (norm.) GADG220120191045VTH 1.4 ID = 1 mA 1.04 1.2 1.02 1.0 1.00 0.98 0.8 0.96 0.6 0.94 -75 DS12076 - Rev 5 -25 25 75 125 175 TJ (°C) 0.4 -75 -25 25 75 125 175 TJ (°C) page 6/12 SCTW35N65G2V Electrical characteristics (curves) Figure 14. Reverse conduction characteristics (TJ = 25 °C) Figure 13. Normalized on-resistance vs temperature RDS(on) (norm.) ID (A) GADG220120191045RON VGS = 20 V 2.0 SIC140220171501RRT25 VGS = -5 V -20 1.5 -40 1.0 -60 0.5 -80 0.0 -75 -25 25 75 125 175 VGS = -2 V VGS = 0 V -100 -7 TJ (°C) VGS = 10 V VGS = 5 V -6 -5 -4 -3 -2 -1 VDS (V) Figure 15. Reverse conduction characteristics (TJ = 175 °C) ID (A) -20 SIC140220171502RRT175 VGS = -5 V VGS = -2 V VGS = 0 V -40 VGS = 10 V VGS = 5 V -60 -80 -100 -7 DS12076 - Rev 5 -6 -5 -4 -3 -2 -1 VDS (V) page 7/12 SCTW35N65G2V Package information 3 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 3.1 HiP247 package information Figure 16. HiP247 package outline 8581091_2 DS12076 - Rev 5 page 8/12 SCTW35N65G2V HiP247 package information Table 8. HiP247 package mechanical data Dim. DS12076 - Rev 5 mm Min. Typ. Max. A 4.85 5.00 5.15 A1 2.20 A2 1.90 b 1.00 1.40 b1 2.00 2.40 b2 3.00 3.40 c 0.40 0.80 D 19.85 20.00 20.15 E 15.45 15.60 15.75 E3 1.45 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 18.30 P 3.55 3.65 Q 5.65 5.95 S 5.30 2.60 2.00 2.10 1.65 5.45 18.50 5.50 5.60 18.70 5.70 page 9/12 SCTW35N65G2V Revision history Table 9. Document revision history Date Revision 31-Mar-2017 1 Changes First release Modified title. 12-Dec-2017 2 Modified Table 4: "On/off-states". Minor text changes. Updated title, features and description in cover page. 04-Oct-2019 3 Removed maturity status indication from cover page. The document status is production data. Updated Section 3.1 HiP247 package information. Content reworked to improve readability. 20-Dec-2019 4 Updated Table 1. Absolute maximum ratings. Minor text changes. Updated features and applications in cover page. Updated Table 3. On/off-states. 25-Jan-2021 5 Updated VSD value from 4.5 V to 3.3 V in Table 7. Reverse diode characteristics. Minor text changes. DS12076 - Rev 5 page 10/12 SCTW35N65G2V Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 3 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3.1 HiP247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 DS12076 - Rev 5 page 11/12 SCTW35N65G2V IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2021 STMicroelectronics – All rights reserved DS12076 - Rev 5 page 12/12