SCTW35N65G2VAG

SCTW35N65G2VAG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package Features 1 2 3 • • • Order code VDS RDS(on) typ. ID SCTW35N65G2VAG 650 V 55 mΩ 45 A AEC-Q101 qualified Very fast and robust intrinsic body diode Low capacitance HiP247 Applications • • • D(2, TAB) Switching mode power supply EV chargers DC-DC converters Description G(1) S(3) AM01475v1_noZen This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. Product status link SCTW35N65G2VAG Product summary Order code SCTW35N65G2VAG Marking SCT35N65G2VAG Package HiP247 Packing Tube DS12885 - Rev 3 - September 2020 For further information contact your local STMicroelectronics sales office. www.st.com SCTW35N65G2VAG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VDS VGS Parameter Value Unit Drain-source voltage 650 V Gate-source voltage -10 to 22 Gate-source voltage (recommended operating range) -5 to 18 V Drain current (continuous) at TC = 25 °C 45 Drain current (continuous) at TC = 100 °C 35 IDM(1) Drain current (pulsed) 90 A PTOT Total power dissipation at TC = 25 °C 240 W Tstg Storage temperature range ID TJ Operating junction temperature range -55 to 200 A °C °C 1. Pulse width is limited by safe operating area. Table 2. Thermal data Symbol DS12885 - Rev 3 Parameter Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient Value Unit 0.72 °C/W 40 °C/W page 2/12 SCTW35N65G2VAG Electrical characteristics 2 Electrical characteristics (TC = 25 °C unless otherwise specified). Table 3. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = -10 to 22 V Gate threshold voltage VDS = VGS, ID = 1 mA RDS(on) Typ. VGS = 0 V, VDS = 650 V, TJ = 200 Static drain-source on-resistance Max. 650 Unit V VGS = 0 V, VDS = 650 V IDSS VGS(th) Min. 50 °C(1) 100 µA ±250 nA 3.2 5 V VGS = 20 V, ID = 20 A 45 67 VGS = 18 V, ID = 20 A 55 VGS = 20 V, ID = 20 A, TJ = 200 °C 68 1.8 mΩ 1. Defined by design, not subject to production test. Table 4. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Rg Gate input resistance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VGS = 0 V, VDS = 400 V, f = 1 MHz f = 1 MHz, ID = 0 A VDD = 400 V, ID = 20 A, VGS = 0 to 20 V Min. Typ. Max. Unit - 1370 - pF - 125 - pF - 30 - pF - 2 - Ω - 73 - nC - 14 - nC - 27 - nC Min. Typ. Max. Unit Table 5. Switching energy (inductive load) Symbol Parameter Test conditions Eon Turn-on switching energy VDD = 400 V, ID = 20 A, - 100 - µJ Eoff Turn-off switching energy RG = 4.7 Ω, VGS = -5 to 20 V - 35 - µJ Min. Typ. Max. Unit - 16 - ns Table 6. Switching times Symbol td(on) tf td(off) tr DS12885 - Rev 3 Parameter Test conditions Turn-on delay time Fall time VDD = 400 V, ID = 20 A, - 14 - ns Turn-off delay time RG = 4.7 Ω, VGS = -5 to 20 V - 35 - ns - 9 - ns Rise time page 3/12 SCTW35N65G2VAG Electrical characteristics Table 7. Reverse diode characteristics Symbol VSD DS12885 - Rev 3 Parameter Forward on voltage trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Test conditions VGS = 0 V, IF = 20 A, VDD = 400 V, IF = 20 A, di/dt = 1000 A/µs Min. Typ. Max. Unit - 3.3 - V - 18 - ns - 85 - nC - 7 - A page 4/12 SCTW35N65G2VAG Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 2. Thermal impedance Figure 1. Safe operating area ID (A) GADG270320171257SOA K GADG270320171310ZTH Operation in this area is limited by max. R DS(on) 10 1 tp =100 µs single pulse 10 -1 t p =1 ms 10 0 t p =10 ms T j ≤ 200 °C Tc = 25 °C single pulse 10 -1 10 -1 10 0 10 1 V DS (V) 10 2 Figure 3. Output characteristics (TJ = 25 °C) ID (A) 80 SIC140220171450OC25 VGS = 20 V VGS = 14 V VGS = 16 V 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) Figure 4. Output characteristics (TJ = 175 °C) ID (A) SIC140220171450OC175 VGS = 20 V VGS = 16 V VGS = 14 V 80 VGS = 12 V VGS = 12 V 60 60 40 VGS = 10 V 40 VGS = 8 V VGS = 10 V 20 20 VGS = 8 V 0 0 VGS = 6 V 2 4 6 8 10 12 VDS (V) VGS = 6 V 0 0 Figure 5. Transfer characteristics ID (A) 4 6 PTOT (W) 10 12 VDS (V) GADG220120191057PDT 240 VDS = 10 V TJ = 200 °C 200 60 40 8 Figure 6. Power dissipation GADG140220171450TCH 80 2 160 TJ = 175 °C 120 TJ = 25 °C 80 20 0 0 DS12885 - Rev 3 40 4 8 12 16 VGS (V) 0 -75 -25 25 75 125 175 TC (°C) page 5/12 SCTW35N65G2VAG Electrical characteristics (curves) Figure 7. Gate charge vs gate-source voltage VGS (V) Figure 8. Capacitance variations C (pF) GADG140220171452QVG GADG140220171452CVR 20 16 12 CISS 10 3 VDD = 400 V ID = 20 A 10 2 8 COSS f = 1 MHz 4 0 0 CRSS 10 20 30 40 50 60 70 Qg (nC) Figure 9. Switching energy vs drain current E (μJ) SIC140220171454SLC Etot VDD = 400 V, RG = 4.7 Ω, VGS = -5 to 20 V 1000 10 1 10 -1 10 0 10 1 10 2 VDS (V) Figure 10. Switching energy vs junction temperature E (μJ) SIC140220171455SLT 140 Etot 120 800 100 Eon Eon 600 80 Eoff 400 60 VDD = 400 V, RG = 4.7 Ω, ID = 20 A, VGS = -5 to 20 V 40 200 Eoff 20 0 0 20 40 60 ID (A) Figure 11. Normalized V(BR)DSS vs temperature V(BR)DSS (norm.) GADG220120191045BDV 1.06 ID = 1 mA 0 0 50 100 150 TJ (°C) Figure 12. Normalized gate threshold voltage vs temperature VGS(th) (norm.) GADG220120191045VTH 1.4 ID = 1 mA 1.04 1.2 1.02 1.0 1.00 0.98 0.8 0.96 0.6 0.94 -75 DS12885 - Rev 3 -25 25 75 125 175 TJ (°C) 0.4 -75 -25 25 75 125 175 TJ (°C) page 6/12 SCTW35N65G2VAG Electrical characteristics (curves) Figure 14. Reverse conduction characteristics (TJ = 25 °C) Figure 13. Normalized on-resistance vs temperature RDS(on) (norm.) ID (A) GADG220120191045RON VGS = 20 V 2.0 SIC140220171501RRT25 VGS = -5 V -20 1.5 -40 1.0 -60 0.5 -80 0 -75 -25 25 75 125 175 VGS = -2 V VGS = 0 V -100 -7 TJ (°C) VGS = 10 V VGS = 5 V -6 -5 -4 -3 -2 -1 VDS (V) Figure 15. Reverse conduction characteristics (TJ = 175 °C) ID (A) -20 SIC140220171502RRT175 VGS = -5 V VGS = -2 V VGS = 0 V -40 VGS = 10 V VGS = 5 V -60 -80 -100 -7 DS12885 - Rev 3 -6 -5 -4 -3 -2 -1 VDS (V) page 7/12 SCTW35N65G2VAG Package information 3 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 3.1 HiP247 package information Figure 16. HiP247 package outline 8581091_3_fig2 DS12885 - Rev 3 page 8/12 SCTW35N65G2VAG HiP247 package information Table 8. HiP247 package mechanical data Dim. DS12885 - Rev 3 mm Min. Typ. Max. A 4.85 5.00 5.15 A1 2.20 A2 1.90 b 1.00 1.40 b1 2.00 2.40 b2 3.00 3.40 c 0.40 0.80 D 19.85 20.00 20.15 E 15.45 15.60 15.75 E3 1.45 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 18.30 P 3.55 3.65 Q 5.65 5.95 S 5.30 2.60 2.00 2.10 1.65 5.45 18.50 5.50 5.60 18.70 5.70 page 9/12 SCTW35N65G2VAG Revision history Table 9. Document revision history Date Revision Changes 22-Jan-2019 1 First release. 13-Feb-2020 2 Modified Table 1. Absolute maximum ratings. Updated marking value in Section Product status / summary. 09-Sep-2020 3 Updated Table 7. Reverse diode characteristics. Updated Section 3 Package information. DS12885 - Rev 3 page 10/12 SCTW35N65G2VAG Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 3 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3.1 HiP247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 DS12885 - Rev 3 page 11/12 SCTW35N65G2VAG IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2020 STMicroelectronics – All rights reserved DS12885 - Rev 3 page 12/12