SCTW40N120G2VAG

SCTW40N120G2VAG Datasheet Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 package Features 2 1 3 HiP247 • • • • Order code VDS RDS(on) max. ID SCTW40N120G2VAG 1200 V 105 mΩ 33 A AEC-Q101 qualified Very fast and robust intrinsic body diode Extremely low gate charge and input capacitance Very high operating junction temperature capability (TJ = 200 °C) Applications D(2, TAB) • • • G(1) Main inverter (electric traction) DC/DC converter for EV/HEV On board charger (OBC) Description S(3) AM01475v1_noZen This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. Product status link SCTW40N120G2VAG Product summary Order code SCTW40N120G2VAG Marking SCT40N120G2VAG Package HiP247 Packing Tube DS12970 - Rev 5 - November 2021 For further information contact your local STMicroelectronics sales office. www.st.com SCTW40N120G2VAG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VDS VGS Parameter Value Unit Drain-source voltage 1200 V Gate-source voltage -10 to 22 Gate-source voltage (recommended operating values) -5 to 18 Gate-source voltage (pulsed, tp = 25 ns repetitive overshoot during switching for an accumulated time of 10 h) -11 to 25 V Drain current (continuous) at TC = 25 °C 33 Drain current (continuous) at TC = 100 °C 25 IDM(1) Drain current (pulsed) 100 A PTOT Total power dissipation at TC = 25 °C 290 W Tstg Storage temperature range ID TJ Operating junction temperature range -55 to 200 A °C °C 1. Pulse width limited by safe operating area. Table 2. Thermal data Symbol DS12970 - Rev 5 Parameter Value Unit RthJC Thermal resistance, junction-to-case 0.6 °C/W RthJA Thermal resistance, junction-to-ambient 40 °C/W page 2/12 SCTW40N120G2VAG Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified. Table 3. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA IDSS Zero gate voltage drain current VDS = 1200 V, VGS = 0 V IGSS Gate-body leakage current VDS = 0 V, VGS = -10 to 22 V VGS(th) Gate threshold voltage VDS = VGS, ID = 1 mA RDS(on) Static drain-source on-resistance Min. Typ. Max. 1200 Unit V 10 µA ±100 nA 3.2 5.0 V VGS = 18 V, ID = 20 A 75 105 VGS = 18 V, ID = 20 A, TJ = 200 °C 195 1.9 mΩ Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit - 1230 - pF - 56 - pF Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance - 15 - pF Qg Total gate charge - 63 - nC Qgs Gate-source charge - 15 - nC Qgd Gate-drain charge - 20 - nC RG Gate input resistance - 1 - Ω Min. Typ. Max. Unit VDS = 800 V, f = 1 MHz, VGS = 0 V VDS = 800 V, VGS = -5 to 18 V, ID = 20 A f = 1 MHz, ID = 0 A Table 5. Switching energy Symbol Parameter Test conditions Eon Turn-on switching energy VDD = 800 V, ID = 20 A, - 235 - µJ Eoff Turn-off switching energy RG = 4.7 Ω, VGS = -5 to 18 V - 77 - µJ Min. Typ. Max. Unit - 11 - ns Table 6. Switching times Symbol td(on) tr td(off) tf DS12970 - Rev 5 Parameter Test conditions Turn-on delay time Rise time VDD = 800 V, ID = 20 A, - 5 - ns Turn-off-delay time RG = 4.7 Ω, VGS = -5 to 18 V - 18 - ns - 13 - ns Fall time page 3/12 SCTW40N120G2VAG Electrical characteristics Table 7. Reverse SiC diode characteristics Symbol DS12970 - Rev 5 Parameter VSD Diode forward voltage trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Test conditions ISD = 20 A, VGS = 0 V ISD = 20 A, di/dt = 2000 A/µs, VDD = 800 V, VGS = -5 to 18 V Min. Typ. Max. Unit - 3.4 - V - 19 - ns - 132 - nC - 20 - A page 4/12 SCTW40N120G2VAG Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 2. Maximum transient thermal impedance Figure 1. Safe operating area ID (A) ea tp=1 ms 10 1 10 10 2 VDS (V) 3 Figure 3. Output characteristics (TJ = -50 °C) ID (A) 16V 14V T 10-3 10-6 10-5 10-4 10-3 VGS = 16, 18, 20 V 10-1 tp (s) GADG041120201238OC25 14V 60 50 10-2 Figure 4. Output characteristics (TJ = 25 °C) ID (A) GADG091120200800OC-50 VGS = 18, 20 V RthJC = 0.6 °C/W duty = ton / T Single pulse ton single pulse 0 10-2 tp=10 ms TC = 25 °C TJ ≤ 200 °C 12V 50 12V 40 40 30 30 20 20 10V 10 0 0 2 0.05 V(BR)DSS 60 3 10-1 tp=100 µs 10 0 10 4 ) tp=10 µs RDS(on) max. 10 -1 10 -1 duty=0.5 tp=1 µs S( on O is pera lim tio ite n in d b th y R is ar D 10 1 GADG040420191023ZTH ZthJC (°C/W) GADG040420191022FSOA 2 4 6 8 10 8V 12 VDS (V) 10 0 0 Figure 5. Output characteristics (TJ = 200 °C) ID (A) 60 40 30 4 6 8 10 8V 6V 12 VDS (V) Figure 6. Transfer characteristics 80 VGS =12, 14, 16, 18, 20 V 2 ID (A) GADG041120201238OC200 50 10V 12V 10V 60 8V 40 GADG040420191026TCH VDS = 12 V Tj = 25 °C Tj = 200 °C 20 20 10 0 0 DS12970 - Rev 5 Tj = -50 °C 6V 2 4 6 8 10 12 VDS (V) 0 2 4 6 8 10 12 14 16 18 VGS (V) page 5/12 SCTW40N120G2VAG Electrical characteristics (curves) Figure 7. Total power dissipation PTOT (W) Figure 8. Gate charge vs gate-source voltage VGS (V) GADG040420191027PDT TJ = 200 °C 300 15 250 GADG220320190908QVG VDD = 800 V ID = 20 A 10 200 150 5 100 0 50 0 -75 -25 25 75 125 175 TC (°C) Figure 9. Capacitance variations C (pF) -5 0 10 20 30 40 50 60 Qg (nC) Figure 10. Switching energy vs drain current GADG220320190920SLC E Ets (μJ) VDD = 800 V, RG = 4.7 Ω VGS = -5 to 18 V 800 GADG220320190909CVR CISS 10 3 Eon 600 400 10 2 COSS f = 1 MHz 10 1 10 -1 CRSS 10 0 10 1 10 2 10 3 VDS (V) Figure 11. Switching energy vs junction temperature GADG220320190922SLT E (μJ) VDD = 800 V, ID = 20 A, RG = 4.7 Ω, VGS = -5 to 18 V Ets 500 Eon 400 Eoff 200 0 0 1.06 1.00 DS12970 - Rev 5 150 200 ID (A) GADG040420191240BDV ID = 1 mA 0.98 Eoff 100 40 1.04 200 50 30 V(BR)DSS (norm.) 1.02 0 0 20 Figure 12. Normalized V(BR)DSS vs temperature 300 100 10 TJ (°C) 0.96 -75 -25 25 75 125 175 TJ (°C) page 6/12 SCTW40N120G2VAG Electrical characteristics (curves) Figure 14. Normalized gate threshold voltage vs temperature Figure 13. Normalized on-resistance vs temperature RDS(on) (norm.) GADG040420191047RON VGS(th) (norm.) VGS = 18 V 2.6 ID = 250 μA 1.4 2.2 1.2 1.8 1.0 1.4 0.8 1.0 0.6 0.6 -75 -25 25 75 125 175 0.4 -75 TJ (°C) Figure 15. Reverse conduction characteristics (TJ = -50 °C) ID (A) VGS = -5 V -20 GADG040420191047VTH 25 75 125 ID (A) VGS = -5 V GADG260320191007SDF_-50 -20 VGS = 15 V VGS = -3 V VGS = 0 V VGS = 5 V VGS = 10 V -60 VGS = 15 V VGS = 10 V VGS = 5 V -80 TJ (°C) GADG220320190904SDF_25 -40 -40 -60 175 Figure 16. Reverse conduction characteristics (TJ = 25 °C) VGS = -3 V -100 -7 -25 -80 VGS = 0 V -6 -5 -4 -3 -2 -1 -100 -7 VDS (V) -6 -5 Tj = -50 °C -4 -3 -2 -1 VDS (V) Figure 17. Reverse conduction characteristics (TJ = 200 °C) ID (A) VGS = -5 V -20 GADG040420191058RCC200 VGS = -3 V VGS = 0 V -40 VGS = 5 V VGS = 10 V -60 VGS = 15 V -80 -100 -7 DS12970 - Rev 5 -6 -5 -4 -3 -2 -1 VDS (V) page 7/12 SCTW40N120G2VAG Package information 3 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 3.1 HiP247 package information Figure 18. HiP247 package outline 8581091_4 DS12970 - Rev 5 page 8/12 SCTW40N120G2VAG HiP247 package information Table 8. HiP247 package mechanical data Dim. Min. Typ. Max. A 4.85 5.00 5.15 A1 2.20 A2 1.90 b 1.00 1.40 b1 2.00 2.40 b2 3.00 3.40 c 0.40 0.80 D 19.85 20.00 20.15 E 15.45 15.60 15.75 E3 1.45 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 18.30 P 3.55 3.65 Q 5.65 5.95 S 5.30 aaa DS12970 - Rev 5 mm 2.60 2.00 2.10 1.65 5.45 18.50 5.60 18.70 5.50 5.70 0.04 0.10 page 9/12 SCTW40N120G2VAG Revision history Table 9. Document revision history DS12970 - Rev 5 Date Revision 09-Apr-2019 1 21-Jul-2020 2 12-Nov-2020 3 06-Sep-2021 4 23-Nov-2021 5 Changes First release. Updated Table 3. On/off states and Table 7. Reverse SiC diode characteristics. Updated Section 3 Package information. Updated Section 2.1 Electrical characteristics (curves). Minor text changes. Modified Table 5. Switching energy (inductive load). Updated Section 3.1 HiP247 package information. Modified Table 1. Absolute maximum ratings. Modified Figure 1. Safe operating area and Figure 2. Maximum transient thermal impedance. page 10/12 SCTW40N120G2VAG Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 3 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3.1 HiP247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 DS12970 - Rev 5 page 11/12 SCTW40N120G2VAG IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2021 STMicroelectronics – All rights reserved DS12970 - Rev 5 page 12/12