SCTW90N65G2V

SCTW90N65G2V Datasheet Silicon carbide Power MOSFET 650 V, 119 A, 18 mΩ (typ., TJ = 25 °C) in an HiP247 package Features 1 2 3 Order code VDS RDS(on) max. ID SCTW90N65G2V 650 V 24 mΩ 119 A • Very high operating junction temperature capability (TJ = 200 °C) • • Very fast and robust intrinsic body diode Extremely low gate charge and input capacitances Applications HiP247 • • • D(2, TAB) Switching applications Power supply for renewable energy systems High frequency DC-DC converters Description G(1) S(3) AM01475v1_noZen This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. Product status link SCTW90N65G2V Product summary Order code SCTW90N65G2V Marking SCT90N65G2V Package HiP247 Packing Tube DS11832 - Rev 5 - July 2019 For further information contact your local STMicroelectronics sales office. www.st.com SCTW90N65G2V Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VDS VGS Parameter Value Unit Drain-source voltage 650 V Gate-source voltage -10 to 22 Gate-source voltage (recommended operating values) -5 to 18 V Drain current (continuous) at TC = 25 °C 119 Drain current (continuous) at TC = 100 °C 90 IDM (1) Drain current (pulsed) 220 A PTOT Total power dissipation at TC = 25 °C 565 W Tstg Storage temperature range ID TJ Operating junction temperature range -55 to 200 A °C °C 1. Pulse width is limited by safe operating area. Table 2. Thermal data Symbol DS11832 - Rev 5 Parameter Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient Value Unit 0.31 °C/W 40 °C/W page 2/12 SCTW90N65G2V Electrical characteristics 2 Electrical characteristics (TC = 25 °C unless otherwise specified). Table 3. On/off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions VGS = 0 V, ID = 1 mA Min. Typ. 650 Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = -10 to 22 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance 10 VDS = 650 V, VGS = 0 V, TJ = 150 °C Unit V VDS = 650 V, VGS = 0 V IDSS Max. 10 µA ±100 nA 3.2 5.0 V VGS = 18 V, ID = 50 A 18 24 VGS = 18 V, ID = 50 A, TJ = 200 °C 30 1.9 mΩ Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit - 3380 - pF - 294 - pF Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance - 49 - pF Qg Total gate charge - 157 - nC Qgs Gate-source charge - 43 - nC Qgd Gate-drain charge - 42 - nC Rg Gate input resistance - 1 - Ω Min. Typ. Max. Unit VDS = 400 V, f = 1 MHz, VGS = 0 V VDD = 400 V, ID = 50 A, VGS = -5 to 18 V f = 1 MHz, ID = 0 A Table 5. Switching energy (inductive load) Symbol DS11832 - Rev 5 Parameter Test conditions Eon Turn-on switching energy VGS = -5 to 18 V, VDD = 400 V, ID = 50 A, - 130 - Eoff Turn-off switching energy RG = 2.2 Ω - 210 - Eon Turn-on switching energy VGS = -5 to 18 V, VDD = 400 V, ID = 50 A, - 135 - Eoff Turn-off switching energy RG = 2.2 Ω, TC = 150 °C - 200 - µJ page 3/12 SCTW90N65G2V Electrical characteristics Table 6. Switching times Symbol td(on) tf td(off) tr Parameter Test conditions Turn-on delay time Min. Typ. Max. Unit - 26 - ns Fall time VDD = 400 V, ID = 50 A, - 16 - ns Turn-off delay time RG = 2.2 Ω, VGS = -5 V to 18 V - 58 - ns - 38 - ns Min. Typ. Max. Unit - 2.5 - V - 17 - ns - 308 - nC - 30 - A Rise time Table 7. Reverse SiC diode characteristics Symbol VSD DS11832 - Rev 5 Parameter Forward on voltage trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Test conditions IF = 30 A, VGS = 0 V IF = 50 A, di/dt = 4000 A/µs, VDD = 400 V page 4/12 SCTW90N65G2V Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area ID (A) Figure 2. Maximum transient thermal impedance ZthJ-C (°C/W) GADG110720191006SOA IDM n) tp =10µs DS (o O is per lim ati ite on d in by th R is a 10 2 re a 10-1 10 1 V(BR)DSS tp =100µs RDS(on) max. tp =1ms TC = 25 °C TJ ≤ 200°C single pulse 10 0 10 1 10 0 10 -1 10 VDS (V) 2 GADG110720191014OCH_-50 VGS =12V 60 RthJ-C = 0.31 (°C/W) duty = ton / T Single pulse 10-4 10-6 T 10-5 10-4 10-3 10-2 10-1 tp (s) Figure 4. Typical output characteristics (TJ = 25 °C) GADG120720191341OCH_25 VGS =16, 18, 20V VGS =14V VGS =12V 80 VGS =10V 60 40 40 VGS =10V 20 1 2 3 4 5 6 VGS = 8V VDS (V) Figure 5. Typical output characteristics (TJ = 200 °C) VGS =14,16,18, 20V 120 80 0 0 1 2 3 4 5 6 VGS =6V VDS (V) Figure 6. Typical transfer characteristics GADG110720191016TCH 120 VGS =12V VGS =10V VGS =8V 100 VGS =8V 20 ID (A) GADG110720191015OCH_200 ID (A) VDS = 3 V 100 80 60 60 TJ = 200 °C TJ = 25 °C 40 40 VGS =6V 20 DS11832 - Rev 5 0.01 100 VGS =14V 80 0 0 0.02 120 VGS =16V 100 0 0 0.2 0.1 0.05 ton ID (A) VGS = 18, 20V 120 10-3 duty=0.5 tp =10ms Figure 3. Typical output characteristics (TJ = -50 °C) ID (A) 10-2 GADG110720191010ZTH 1 2 3 4 5 6 VDS (V) 20 0 0 4 8 12 16 VGS (V) page 5/12 SCTW90N65G2V Electrical characteristics (curves) Figure 7. Typical capacitances C (pF) Figure 8. Typical gate charge VGS (V) GADG110720191017CVR CISS 15 GADG110720191018QVG VDD = 400 V ID = 50 A 10 3 10 COSS 5 10 2 f = 1 MHz CRSS 10 1 10 -1 10 0 10 1 10 2 VDS (V) Figure 9. Maximum total power dissipation PTOT (W) GADG110720191023PDT 0 -5 0 400 19 200 17 100 16 25 75 125 175 TC (°C) Figure 11. Normalized on-resistance vs temperature RDS(on) (norm.) GADG110720191026RON 1.8 Qg (nC) GADG110720191025RID VGS = 18 V 15 0 20 40 60 80 100 ID (A) Figure 12. Normalized gate threshold voltage vs temperature VGS(th) (norm.) GADG110720191027VTH 1.4 1.2 1.4 ID = 250 µA 1.0 1.2 0.8 1.0 DS11832 - Rev 5 150 VGS = 18 V 1.6 0.8 -75 120 18 TJ =200 °C -25 90 RDS(on) (mΩ) 20 0 -75 60 Figure 10. Typical drain-source on-resistance 500 300 30 0.6 -25 25 75 125 175 TJ (°C) 0.4 -75 -25 25 75 125 175 TJ (°C) page 6/12 SCTW90N65G2V Electrical characteristics (curves) Figure 13. Normalized breakdown voltage vs temperature V(BR)DSS (norm.) GADG110720191027BDV 1.06 E (µJ) VDD = 400 V VGS = -5 to 18 V 600 R = 2.2 Ω G GADG110720191040SDC Etot 500 ID = 1 mA 1.04 Figure 14. Typical switching energy vs drain current Eoff 400 1.02 300 1.00 0.98 100 0.96 -75 -25 25 75 125 175 TJ (°C) Figure 15. Typical switching energy vs temperature GADG110720191041SLT E (µJ) VDD = 400 V, ID = 50 A, VGS = -5 to 18 V, RG = 2.2 Ω 360 E tot 300 0 20 180 50 60 70 ID (A) GADG110720191046RCC_-50 ID (A) -20 -60 Eon -80 VGS =-3, -5V -100 60 -120 0 -25 25 75 125 175 TC (°C) Figure 17. Typical reverse conduction characteristics (TJ = 25 °C) GADG110720191043RCC_25 ID (A) -20 -140 -6 VGS =0V VGS =5V VGS =10V -5 -4 -3 VGS =15V -2 -1 VDS (V) Figure 18. Typical reverse conduction characteristics (TJ = 150 °C) GADG110720191048RCC_150 ID (A) -20 VGS =-5, -3V -40 -60 -60 -80 -80 -100 VGS =15V VGS =0V VGS =5V -120 DS11832 - Rev 5 40 Figure 16. Typical reverse conduction characteristics (TJ = -50 °C) Eoff 120 -140 -6 30 -40 240 -40 Eon 200 -5 -4 -3 -1 -100 VGS =0V VGS =5V -120 VGS =10V -2 VGS =-3, -5V VDS (V) -140 -6 VGS =15V VGS =10V -5 -4 -3 -2 -1 VDS (V) page 7/12 SCTW90N65G2V Package information 3 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 3.1 HiP247 package information Figure 19. HiP247 package outline 8581091_2 DS11832 - Rev 5 page 8/12 SCTW90N65G2V HiP247 package information Table 8. HiP247 package mechanical data Dim. DS11832 - Rev 5 mm Min. Typ. Max. A 4.85 5.00 5.15 A1 2.20 A2 1.90 b 1.00 1.40 b1 2.00 2.40 b2 3.00 3.40 c 0.40 0.80 D 19.85 20.00 20.15 E 15.45 15.60 15.75 E3 1.45 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 18.30 P 3.55 3.65 Q 5.65 5.95 S 5.30 2.60 2.00 2.10 1.65 5.45 18.50 5.50 5.60 18.70 5.70 page 9/12 SCTW90N65G2V Revision history Table 9. Document revision history Date Revision 15-Sep-2016 1 Changes First release Updated Table 7: "Switching times" and Table 8: "Reverse diode characteristics". 29-Mar-2017 2 Updated Section 2.1: "Electrical characteristics (curves)". Minor text changes Updated cover page. 25-Jun-2018 3 Updated Section 2 Electrical characteristics and Section 3 Package information. Minor text changes. Modified Table 1. Absolute maximum ratings, Table 3. On/off states. 24-Jan-2019 4 Modified Figure 1. Safe operating area and Figure 2. Normalized thermal impedance. Minor text changes. Updated Section 1 Electrical ratings. 15-Jul-2019 5 Updated Section 2 Electrical characteristics and Section 2.1 Electrical characteristics (curves). Minor text changes. DS11832 - Rev 5 page 10/12 SCTW90N65G2V Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 3 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3.1 HiP247™ package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 DS11832 - Rev 5 page 11/12 SCTW90N65G2V IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS11832 - Rev 5 page 12/12