SCTWA30N120

SCTWA30N120 Silicon carbide Power MOSFET 1200 V, 45 A, 90 mΩ (typ., TJ= 150 °C), in an HiP247™ long leads package Datasheet - production data Features     Very tight variation of on-resistance vs. temperature Very high operating junction temperature capability (TJ = 200 °C) Very fast and robust intrinsic body diode Low capacitance Applications Figure 1: Internal schematic diagram     Solar inverters, UPS Motor drives High voltage DC-DC converters Switch mode power supply Description This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allow designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. D(2, TAB) G(1) S(3) AM01475v1_noZen Table 1: Device summary Order code Marking Package Packaging SCTWA30N120 SCT30N120 HiP247™ long leads Tube June 2017 DocID028837 Rev 2 This is information on a product in full production. 1/13 www.st.com Contents SCTWA30N120 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 3 Package information ..................................................................... 10 3.1 4 2/13 Electrical characteristics (curves) ...................................................... 6 HiP247 long leads package information .......................................... 10 Revision history ............................................................................ 12 DocID028837 Rev 2 SCTWA30N120 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 1200 V VGS Gate-source voltage -10 to 25 V ID Drain current (continuous) at TC = 25 °C (limited by die) 45 A ID Drain current (continuous) at TC = 25 °C (limited by package) 40 A ID Drain current (continuous) at TC = 100 °C 34 A IDM (1) Drain current (pulsed) 90 A PTOT Total dissipation at TC = 25 °C 270 W Tstg Storage temperature range -55 to 200 °C Tj Operating junction temperature range Notes: (1)Pulse width limited by safe operating area. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 0.65 °C/W Rthj-amb Thermal resistance junction-amb 40 °C/W DocID028837 Rev 2 3/13 Electrical characteristics 2 SCTWA30N120 Electrical characteristics (Tcase =25 °C unless otherwise specified) Table 4: On /off states Symbol Parameter Test conditions Typ. Max. Unit VGS = 0 V, VDS = 1200 V 1 25 µA VGS = 0 V, VDS = 1200 V, TJ=200 °C 50 IDSS Zero gate voltage drain current IGSS Gate-body leakage current VDS=0 V, VGS = -10 to 22 V Gate threshold voltage VDS = VGS, ID = 1 mA VGS(th) RDS(on) Static drain-source onresistance Min. µA ±100 1.8 3.5 nA V 100 mΩ VGS = 20 V, ID = 20 A 80 VGS = 20 V, ID = 20 A TJ= 150 °C 90 mΩ VGS = 20 V, ID = 20 A TJ= 200 °C 100 mΩ Table 5: Dynamic Symbol Ciss Parameter Test conditions Min. Typ. Max. Unit - 1700 - pF - 130 - pF - 25 - pF - 5 - Ω - 105 - nC - 16 - nC - 40 - nC Min. Typ. Max Unit VDD = 800 V, ID = 20 A, RG = 6.8 Ω, VGS = -2 to 20 V - 500 - µJ - 350 - µJ VDD = 800 V, ID = 20 A, RG = 6.8 Ω, VGS = -2 to 20 V TJ= 150 °C - 500 - µJ - 400 - µJ Input capacitance VGS=0 V, VDS =400 V, f=1 MHz Coss Output capacitance Crss Reverse transfer capacitance RG Intrinsic gate resistance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge f = 1 MHz, ID=0 A VDD = 800 V, ID = 20 A VGS =0 to 20 V Table 6: Switching energy (inductive load) Symbol Parameter Test conditions Eon Turn-on switching energy Eoff Turn-off switching energy Eon Turn-on switching energy Eoff Turn-off switching energy Table 7: Switching times Symbol td(on)V tf(V td(off)V tr(V) 4/13 Parameter Test conditions Turn-on delay time Fall time Turn-off-delay time VDD = 800 V, ID = 20 A, RG = 0 Ω, VGS = 0 to 20 V Rise time DocID028837 Rev 2 Min. Typ. Max Unit - 19 - ns - 28 - ns - 45 - ns - 20 - ns SCTWA30N120 Electrical characteristics Table 8: Reverse SiC diode characteristics Symbol Parameter Test conditions VSD Diode forward voltage trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current IF = 10 A, VGS = 0 V ISD = 20 A, di/dt = 100 A/µs VDD= 800 V DocID028837 Rev 2 Min. Typ. Max Unit - 3.5 - V - 140 - ns - 140 nC - 2 A 5/13 Electrical characteristics 2.1 SCTWA30N120 Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics (TJ= 25 °C) Figure 5: Output characteristics (TJ= 150 °C) Figure 6: Output characteristics (TJ= 200 °C) Figure 7: Transfer characteristics 6/13 DocID028837 Rev 2 SCTWA30N120 Electrical characteristics Figure 8: Power dissipation Figure 9: Gate charge vs gate-source voltage Figure 10: Capacitance variations Figure 11: Switching energy vs. drain current Figure 12: Switching energy vs. junction temperature Figure 13: Normalized V(BR)DSS vs. temperature DocID028837 Rev 2 7/13 Electrical characteristics SCTWA30N120 Figure 14: Normalized gate threshold voltage vs. temperature Figure 15: Normalized on-resistance vs. temperature Figure 16: Body diode characteristics (TJ= -50 °C) Figure 17: Body diode characteristics (TJ= 25 °C Figure 18: Body diode characteristics (TJ= 150 °C) Figure 19: 3rd quadrant characteristics (TJ= -50 °C) 8/13 DocID028837 Rev 2 SCTWA30N120 Electrical characteristics Figure 20: 3rd quadrant characteristics (TJ= 25 °C) Figure 21: 3rd quadrant characteristics (TJ= 150 °C) VDS (V) -6 -5 -4 -3 -2 -1 0 1 0 5V -10 VGS=0V 10V -20 20V -30 -40 15V 180220151648 DocID028837 Rev 2 ID(A) 9/13 Package information 3 SCTWA30N120 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 3.1 HiP247 long leads package information Figure 22: HiP247™ long leads package outline 7395426_7.0 10/13 DocID028837 Rev 2 SCTWA30N120 Package information Table 9: HiP247™ long leads package mechanical data mm Dim. Min. Typ. Max. A 4.90 5.15 D 1.85 2.10 E 0.55 0.67 F 1.07 1.32 F1 1.90 2.38 F2 2.87 G 3.38 10.90 BSC H 15.77 16.02 L 20.82 21.07 L1 4.16 4.47 L2 5.49 5.74 L3 20.05 20.30 L4 3.68 3.93 L5 6.04 6.29 M 2.25 2.55 V 10° V1 3° V3 20° DIA 3.55 DocID028837 Rev 2 3.66 11/13 Revision history 4 SCTWA30N120 Revision history Table 10: Document revision history Date Revision 11-Jan-2016 1 First release. 2 Updated title, features in cover page. Minor text edit in Section 1: "Electrical ratings" and Section 2: "Electrical characteristics". Updated Figure 2: "Safe operating area", Figure 3: "Thermal impedance", Figure 13: "Normalized V(BR)DSS vs. temperature", Figure 14: "Normalized gate threshold voltage vs. temperature" and Figure 15: "Normalized on-resistance vs. temperature". Document status promoted from preliminary to production data. 19-Jun-2017 12/13 Changes DocID028837 Rev 2 SCTWA30N120 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved DocID028837 Rev 2 13/13