SCTWA90N65G2V-4

SCTWA90N65G2V-4 Datasheet Silicon carbide Power MOSFET 650 V, 18 mΩ typ., 119 A in an HiP247-4 package Features 1 2 4 3 HiP247-4 Order code VDS RDS(on) max. ID SCTWA90N65G2V-4 650 V 24 mΩ 119 A • • High speed switching performance Very high operating junction temperature capability (TJ = 200 °C) • • • Very fast and robust intrinsic body diode Extremely low gate charge and input capacitances Source sensing pin for increased efficiency Drain(1, TAB) Applications • • • Gate(4) Driver source(3) Power source(2) ND1TPS2DS3G4 Switching mode power supply DC-DC converters Industrial motor control Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. Product status link SCTWA90N65G2V-4 Product summary Order code SCTWA90N65G2V-4 Marking SCT90N65G2V Package HiP247-4 Packing Tube DS13582 - Rev 1 - November 2020 For further information contact your local STMicroelectronics sales office. www.st.com SCTWA90N65G2V-4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VDS VGS Parameter Value Unit Drain-source voltage 650 V Gate-source voltage -10 to 22 Gate-source voltage (recommended operating values) -5 to 18 V Drain current (continuous) at TC = 25 °C 119 Drain current (continuous) at TC = 100 °C 90 IDM (1) Drain current (pulsed) 220 A PTOT Total power dissipation at TC = 25 °C 565 W Tstg Storage temperature range ID Tj Operating junction temperature range -55 to 200 A °C °C 1. Pulse width is limited by safe operating area. Table 2. Thermal data Symbol DS13582 - Rev 1 Parameter RthJC Thermal resistance, junction-to-case RthJA Thermal resistance, junction-to-ambient Value Unit 0.31 °C/W 40 °C/W page 2/13 SCTWA90N65G2V-4 Electrical characteristics 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified). Table 3. On/off states Symbol Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA IDSS Zero gate voltage drain current VDS = 650 V, VGS = 0 V IGSS Gate-body leakage current VDS = 0 V, VGS = -10 to 22 V VGS(th) Gate threshold voltage VDS = VGS, ID = 1 mA RDS(on) Static drain-source onresistance V(BR)DSS Min. Typ. Max. 650 Unit V 10 µA ±100 nA 3.2 5.0 V VGS = 18 V, ID = 50 A 18 24 VGS = 18 V, ID = 50 A, TJ = 200 °C 30 1.9 mΩ Table 4. Dynamic, based on HiP247 package option Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Rg Gate input resistance Test conditions VDS = 400 V, f = 1 MHz, VGS = 0 V VDD = 400 V, ID = 50 A, VGS = -5 V to 18 V f = 1 MHz, ID = 0 A Min. Typ. Max. Unit - 3380 - - 294 - - 49 - - 157 - - 43 - - 42 - - 1 - Ω Unit pF nC Table 5. Switching energy (inductive load), based on HiP247 package option Symbol DS13582 - Rev 1 Parameter Eon Turn-on switching energy Eoff Turn-off switching energy Eon Turn-on switching energy Eoff Turn-off switching energy Test conditions VDD = 400 V, ID = 50 A, RG = 2.2 Ω, VGS = -5 to 18 V VDD = 400 V, ID = 50 A, RG = 2.2 Ω, VGS = -5 to 18 V, TJ= 200 °C Min. Typ. Max. - 130 - - 210 - - 135 - - 200 - µJ page 3/13 SCTWA90N65G2V-4 Electrical characteristics Table 6. Switching times, based on HiP247 package option Symbol td(on) tf td(off) tr Parameter Test conditions Turn-on delay time Min. Typ. Max. - 26 - Fall time VDD = 400 V, ID = 50 A, - 16 - Turn-off delay time RG = 2.2 Ω, VGS = -5 V to 18 V, - 58 - - 38 - Rise time Unit ns Table 7. Reverse SiC diode characteristics, based on HiP247 package option Symbol VSD DS13582 - Rev 1 Parameter Test conditions Min. Typ. Max. Unit Forward on voltage IF = 30 A, VGS = 0 V - 2.5 - V trr Reverse recovery time IF = 50 A, di/dt = 4000 A/µs, - 17 - ns Qrr Reverse recovery charge VGS = VGS = -5 V to 18 V, - 308 - nC IRRM Reverse recovery current VDD = 400 V, TJ = 25 °C - 30 - A page 4/13 SCTWA90N65G2V-4 Electrical characteristics (curves), based on HiP247 package option 2.1 Electrical characteristics (curves), based on HiP247 package option Figure 1. Safe operating area ID (A) Figure 2. Maximum transient thermal impedance ZthJ-C (°C/W) GADG110720191006SOA IDM n) tp =10µs DS (o O is per lim ati ite on d in by th R is a 10 2 re a 10-1 10 1 V(BR)DSS tp =100µs RDS(on) max. tp =1ms TC = 25 °C TJ ≤ 200°C single pulse 10 0 10 1 10 0 10 -1 10 VDS (V) 2 GADG110720191014OCH_-50 VGS =12V 60 RthJ-C = 0.31 (°C/W) duty = ton / T Single pulse 10-4 10-6 T 10-5 10-4 10-3 10-2 10-1 tp (s) Figure 4. Typical output characteristics (TJ = 25 °C) GADG120720191341OCH_25 VGS =16, 18, 20V VGS =14V VGS =12V 80 VGS =10V 60 40 40 VGS =10V 20 1 2 3 4 5 6 VGS = 8V VDS (V) Figure 5. Typical output characteristics (TJ = 200 °C) VGS =14,16,18, 20V 120 80 0 0 1 2 3 4 5 6 VGS =6V VDS (V) Figure 6. Typical transfer characteristics GADG110720191016TCH 120 VGS =12V VGS =10V VGS =8V 100 VGS =8V 20 ID (A) GADG110720191015OCH_200 ID (A) VDS = 3 V 100 80 60 60 TJ = 200 °C TJ = 25 °C 40 40 VGS =6V 20 DS13582 - Rev 1 0.01 100 VGS =14V 80 0 0 0.02 120 VGS =16V 100 0 0 0.2 0.1 0.05 ton ID (A) VGS = 18, 20V 120 10-3 duty=0.5 tp =10ms Figure 3. Typical output characteristics (TJ = -50 °C) ID (A) 10-2 GADG110720191010ZTH 1 2 3 4 5 6 VDS (V) 20 0 0 4 8 12 16 VGS (V) page 5/13 SCTWA90N65G2V-4 Electrical characteristics (curves), based on HiP247 package option Figure 7. Typical capacitances C (pF) Figure 8. Typical gate charge VGS (V) GADG110720191017CVR CISS 15 GADG110720191018QVG VDD = 400 V ID = 50 A 10 3 10 COSS 5 10 2 f = 1 MHz CRSS 10 1 10 -1 10 0 10 1 10 2 VDS (V) Figure 9. Maximum total power dissipation PTOT (W) GADG110720191023PDT 0 -5 0 400 19 200 17 100 16 25 75 125 175 TC (°C) Figure 11. Normalized on-resistance vs temperature RDS(on) (norm.) GADG110720191026RON 1.8 Qg (nC) GADG110720191025RID VGS = 18 V 15 0 20 40 60 80 100 ID (A) Figure 12. Normalized gate threshold voltage vs temperature VGS(th) (norm.) GADG110720191027VTH 1.4 1.2 1.4 ID = 250 µA 1.0 1.2 0.8 1.0 DS13582 - Rev 1 150 VGS = 18 V 1.6 0.8 -75 120 18 TJ =200 °C -25 90 RDS(on) (mΩ) 20 0 -75 60 Figure 10. Typical drain-source on-resistance 500 300 30 0.6 -25 25 75 125 175 TJ (°C) 0.4 -75 -25 25 75 125 175 TJ (°C) page 6/13 SCTWA90N65G2V-4 Electrical characteristics (curves), based on HiP247 package option Figure 13. Normalized breakdown voltage vs temperature V(BR)DSS (norm.) GADG110720191027BDV 1.06 E (µJ) VDD = 400 V VGS = -5 to 18 V 600 R = 2.2 Ω G GADG110720191040SDC Etot 500 ID = 1 mA 1.04 Figure 14. Typical switching energy vs drain current Eoff 400 1.02 300 1.00 0.98 100 0.96 -75 -25 25 75 125 175 TJ (°C) Figure 15. Typical switching energy vs temperature GADG110720191041SLT E (µJ) VDD = 400 V, ID = 50 A, VGS = -5 to 18 V, RG = 2.2 Ω 360 E tot 300 0 20 180 50 60 70 ID (A) GADG110720191046RCC_-50 ID (A) -20 -60 Eon -80 VGS =-3, -5V -100 60 -120 0 -25 25 75 125 175 TC (°C) Figure 17. Typical reverse conduction characteristics (TJ = 25 °C) GADG110720191043RCC_25 ID (A) -20 -140 -6 VGS =0V VGS =5V VGS =10V -5 -4 -3 VGS =15V -2 -1 VDS (V) Figure 18. Typical reverse conduction characteristics (TJ = 150 °C) GADG110720191048RCC_150 ID (A) -20 VGS =-5, -3V -40 -60 -60 -80 -80 -100 VGS =15V VGS =0V VGS =5V -120 DS13582 - Rev 1 40 Figure 16. Typical reverse conduction characteristics (TJ = -50 °C) Eoff 120 -140 -6 30 -40 240 -40 Eon 200 -5 -4 -3 -1 -100 VGS =0V VGS =5V -120 VGS =10V -2 VGS =-3, -5V VDS (V) -140 -6 VGS =15V VGS =10V -5 -4 -3 -2 -1 VDS (V) page 7/13 SCTWA90N65G2V-4 Test circuits 3 Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Test circuit for gate charge behavior VDD 12V 47kΩ 1kΩ 100nF + VD VGS 3.3 µF 2200 RL µF IG=CONST VDD 2200 µF + RG 100Ω Vi ≤ VGS D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ GND1 (driver signal) GND2 (power) 1kΩ PW GND1 AM15855v1 Figure 21. Test circuit for inductive load switching and diode recovery times A A D.U.T. FAST DIODE S A L L=100µH D 25Ω VD 3.3 µF B B B AM15856v1 Figure 22. Unclamped inductive load test circuit D G GND2 + 1000 µF 2200 µF + VDD 3.3 µF VDD ID G S RG D.U.T. Vi Pw GND2 GND1 D.U.T. GND1 GND2 AM15858v1 AM15857v1 Figure 24. Switching time waveform Figure 23. Unclamped inductive waveform ton td(on) V(BR)DSS toff td(off) tr tf VD 90% 90% IDM ID VDD 10% 0 VDS 10% VDD VGS AM01472v1 0 90% 10% AM01473v1 DS13582 - Rev 1 page 8/13 SCTWA90N65G2V-4 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 HiP247-4 package information Figure 25. HiP247-4 package outline 8405626_2 DS13582 - Rev 1 page 9/13 SCTWA90N65G2V-4 HiP247-4 package information Table 8. HiP247-4 mechanical data Dim. mm Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 b1 1.15 b2 0 0.20 c 0.59 0.66 c1 0.58 0.60 0.62 D 20.90 21.00 21.10 D1 16.25 16.55 16.85 D2 1.05 1.20 1.35 D3 24.97 25.12 25.27 E 15.70 15.80 15.90 E1 13.10 13.30 13.50 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 2.44 2.54 2.64 e1 4.98 5.08 5.18 L 19.80 19.92 20.10 P 3.50 3.60 3.70 1.29 1.20 P1 7.40 P2 2.40 Q 5.60 S DS13582 - Rev 1 1.25 2.50 2.60 6.00 6.15 T 9.80 10.20 U 6.00 6.40 page 10/13 SCTWA90N65G2V-4 Revision history Table 9. Document revision history DS13582 - Rev 1 Date Revision 25-Nov-2020 1 Changes First release. page 11/13 SCTWA90N65G2V-4 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves), based on HiP247 package option . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.1 HiP247-4 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 DS13582 - Rev 1 page 12/13 SCTWA90N65G2V-4 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2020 STMicroelectronics – All rights reserved DS13582 - Rev 1 page 13/13