SD1135

SD1135 RF & MICROWAVE TRANSISTORS U HF MOBILE APPLICATIONS . . . . . 470 MHz 12.5 VOLTS EFFICIENCY 60% COMMON EMITTER P OUT = 5.0 W MIN. WITH 8.5 dB GAIN .280 2L STUD (M122) epoxy sealed ORDER CODE SD1135 BRANDING SD1135 PIN CONNECTION DESCRIPTION The SD1135 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter 1. Collector 2. Emitter 3. Base 4. Emitter Value Unit VCBO VCER VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 36 18 36 4.0 2.0 37 +200 − 65 to +150 V V V V A W °C °C °C/W 1/4 THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance October 1992 11.6 SD1135 E LECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCES BVCEO BVEBO I CBO hFE IC = 10mA IC = 50mA IE = 2mA VCB = 15V VCE = 5V VBE = 0mA IB = 0mA IC = 0mA IE = 0mA IC = 200mA 36 16 4.0 — 20 — — — — — — — — 1 — V V V mA — DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT GP COB f = 470 MHz f = 470 MHz f = 1 MHz PIN = 0.70 W PIN = 0.70 W VCB = 12 V VCC = 12.5 V VCC = 12.5 V 5.0 8.5 — — — 19 — — — W dB pF TYPICAL PERFORMANCE POWER OUTPUT vs POWER INPUT POWER OUTPUT vs FREQUENCY CAPACITANCE vs VOLTAGE 2/4 SD1135 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN FREQ. 450 MHz TYPICAL COLLECTOR LOAD IMPEDANCE ZCL 470 MHz 512 MHz ZIN (Ω) 1.4 + j 2.0 1.4 + j 2.9 1.5 + j 3.4 Z CL (Ω) 10.7 − j 6.9 11.4 − j 5.8 11.9 − j 3.2 T EST CIRCUIT C1,C2, C5,C6 C3,C4 C7 C8 : : : : 0.8-10pF, Voltronics AJ10 ATC 100-B, 16pF, Chip Capacitor ATC 100-B, 620pF, Chip Capacitor 5.6µF, 35V, Electrolytic C9 C10 L1 RFC : : : : 0.1µF, Disc-Ceramic 0.01µF, Disc-Ceramic 2 Turns, #22 Enameled, 0.1” I.D. 2 Turns in Ferroxcube VK 200/19-4B Board Material 3M-K-6098, 1/16” Thick 3/4 SD1135 P ACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0122 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4