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SD1275-01

SD1275-01

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    M113

  • 描述:

    TRANS NPN RF MICROWAVE VHF M113

  • 详情介绍
  • 数据手册
  • 价格&库存
SD1275-01 数据手册
SD1275-01 RF & MICROWAVE TRANSISTORS V HF MOBILE APPLICATIONS . . . . 160 MHz 13.6 VOLTS COMMON EMITTER P OUT = 40 W MIN. WITH 9.0 dB GAIN .380 4LFL (M113) epoxy sealed ORDER CODE SD1275-01 BRANDING SD1275-1 PIN CONNECTION DESCRIPTION The SD1275-01 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. The SD1275-01 utilizes an emitter ballasted die geometry to withstand severe load mismatch conditions. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter 1. Collector 2. Emitter 3. Base 4. Emitter Value Unit VCBO VCEO VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 36 16 36 4.0 8.0 70 +200 − 65 to +150 V V V V A W °C °C °C/W 1/4 THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance June 1993 1.2 SD1275-01 E LECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCES BVCEO BVEBO I CBO hFE IC = 15mA IC = 50mA IE = 5mA VCB = 15V VCE = 5V VBE = 0mA IB = 0mA IC = 0mA IE = 0mA IC = 250mA 36 16 4.0 — 20 — — — — — — — — 5 — V V V mA — DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT GP COB f = 160 MHz f = 160 MHz f = 1 MHz PIN = 5.0 W PIN = 5.0 W VCB = 15 V VCE = 13.6 V VCE = 13.6 V 40 9 — — — 95 — — — W dB pF TYPICAL PERFORMANCE POWER GAIN vs FREQUENCY POWER OUTPUT vs POWER INPUT 2/4 SD1275-01 TYPICAL PERFORMANCE (cont’d) POWER OUTPUT vs SUPPLY VOLTAGE (175 MHz) POWER OUTPUT vs SUPPLY VOLTAGE (145 MHz) POWER OUTPUT vs SUPPLY VOLTAGE (160 MHz) I MPEDANCE DATA FREQ. 160 MHz PIN = 3.0 W VCE = 12.5 V ZIN (Ω) 1.0 + j 0.4 Z CL (Ω) 2.3 + j 0.1 3/4 SD1275-01 P ACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0113 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4
SD1275-01
1. 物料型号: - 型号代码:SD1275-01

2. 器件简介: - SD1275-01是一款13.6V Class C外延硅NPN平面晶体管,主要用于VHF通信。该器件采用发射极平衡的晶片几何结构,以承受严重的负载失配条件。

3. 引脚分配: - 1. Collector(集电极) - 2. Emitter(发射极) - 3. Base(基极) - 4. Emitter(发射极)

4. 参数特性: - 绝对最大额定值: - VCBO(集电极-基极电压):36V - VCEO(集电极-发射极电压):16V - VCES(集电极-发射极电压):36V - VEBO(发射极-基极电压):4.0V - Ic(器件电流):8.0A - PDISS(功率耗散):70W - TJ(结温):+200°C - TSTG(储存温度):65至+150°C

5. 功能详解: - 静态特性: - BVCES(集电极-发射极击穿电压):36V - BVCEO(集电极-发射极击穿电压):16V - BVEBO(发射极-基极击穿电压):4.0V - ICBO(集电极-基极反向电流):5mA - hFE(电流增益):20 - 动态特性: - POUT(输出功率):在160MHz,输入功率为5.0W时,最小输出功率为40W - GP(功率增益):在160MHz,输入功率为5.0W时,增益为9dB - COB(输出电容):95pF

6. 应用信息: - SD1275-01主要应用于VHF移动通信。

7. 封装信息: - 封装类型:M113环氧树脂密封 - 封装尺寸:详见PDF文档中的机械数据图。
SD1275-01 价格&库存

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