SD1391

SD1391 RF & MICROWAVE TRANSISTORS UHF BASE STATION APPLICATIONS . . . . . . P RELIMINARY DATA 470 MHZ 24 VOLTS EFFICIENCY 50% MIN. POUT = 15 W WITH 11.0 dB MIN. GAIN CLASS AB COMMON EMITTER .2 30 x .3 60 6LF L (M1 4 2) O R DE R CODE SD1391 BRANDING SD1391 PIN CONNECTION DESCRIPTION The SD1391 is a gold metallized NPN planar transistor using diffused emitter ballast resistors for reliability and ruggedness. The SD1391 is specifically designed as a low power, high gain driver and can be operated in Class A, B or C. 1. Collector 2. Base 3. Emitter ABSOLUTE MAXIMUM RATINGS (T case = 25° C) Symbol Parameter Value Un it VCBO VCEO VEBO IC PDISS TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation (+25°C) Junction Temperature Storage Temperature 48 25 3.5 2.5 29 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 6.0 °C/W A ugust 23, 1996 1/5 SD1391 ELECTRICAL SPECIFICATIONS (T case = 25° C) S TATIC S ym bo l Te s t C o n ditio n s Va lu e Min. Typ . Ma x. Un it BVCBO BVCEO BVEBO ICBO hFE IC = 50 mA IC = 20 mA IE = 5 mA VC B = 24 V VC E = 10 V IE = 0 mA IB = 0 mA IC = 0 mA IE = 0 mA IC = 0.1 A 48 25 3.5 — 10 — — — — — — — — 1.0 100 V V V mA — DYNAMIC S ym bo l T e s t Co n d itio ns Va lu e Min. T yp . Ma x. Un it POUT ηC f = 470 MHz PIN = 6.3 W f = 470 MHz PIN = 6.3 W f = 470 MHz PIN = 6.3 W f = 1 MHz VCB = 24 V VCC = 24V VCC = 24V VCC = 24V ICQ = 50 mA ICQ = 50 mA ICQ = 50 mA 15 50 10 — — 60 — — — W % dB RTL COB 24 pF 2/5 SD1391 POWE R GAIN vs FREQUENCY EFFICIENCY vs FREQUENCY OUTPUT POW ER vs INPUT POWE R INPUT RETURN LOS S vs FREQUENCY 3/5 SD1391 TEST CIRCUIT C1 C2 C3 : : : 2200pf Chip Capacitor 22pf Chip Capacitor + 2-10pf Trim Capacitor 2 x 33pf + 2-22pf Trim Capacitor 8.2pf + 2-10pf Trim Capacitor 330pf Chip Capac itor :1nF + 10nF + 100nF + 10mF L1 L2 L3 L4 L5 : : : : : 50 ohms microstrip line, L = 6mm 50 ohms microstrip line, L = 19mm 50 ohms microstrip line, L = 25mm 50 ohms microstrip line, L = 14mm 50 ohms microstrip line, L = 20mm 50 ohms microstrip line, L = 7.5mm 50 ohms microstrip line, L = 8.5mm 5 Turns, ID = 33mm, 0.5mm Wire diameter C5 : C6 : C7,C8 L6 : L7 : L8,L9 : Board Material: Teflon H = 30mils, Er = 2.55 IMPEDANCE DATA TYP ICAL INP UT IMP E DANC E ZIN FREQ. 420 MHz 450 MHz T YP ICAL C OLLEC TOR LOAD IMP E DANCE ZCL ZIN(Ω) 4.0 + j 2.2 5.4 + j 3.9 4.9 + j 5.7 Z CL(Ω) 7.2 + j 1.0 6.8 + j 3.0 6.6 + j 4.3 470 MHz 4/5 SD1391 PACKAGE MECHANICAL DATA R ef.: Dwg. No. 12-0142 rev. C UDC S No. 1010968 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. ©1996 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan Thailand - United Kingdom - U.S.A. 5/5