SD1407

SD1407 RF & MICROWAVE TRANSISTORS H F SSB APPLICATIONS . . . . . . 30 MHz 28 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION P OUT = 125 W MIN. WITH 15 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1407 BRANDING 1407 PIN CONNECTION DESCRIPTION The SD1407 is a 28 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes state-of-the-art diffused emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base 4. Emitter VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 36 4.0 20 270 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance October 1992 0.65 °C/W 1/4 SD1407 E LECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCES BVCEO BVEBO ICES hFE IC = 100mA IC = 100mA IC = 100mA IE = 10mA VCE = 30V VCE = 5V IE = 0mA VBE = 0V IB = 0mA IC = 0mA IE = 0mA IC = 5A 65 65 35 4.0 — 10 — — — — — — — — — — 15 200 V V V V mA — DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT GP IMD* COB Note: *P OUT f = 30 MHz f = 30 MHz f = 30 MHz f = 1 MHz = 100W PE P, fO PIN = 3.95 W PIN = 3.95 W VCE = 28 V VCB = 30 V = 30 + 30.001 MHz VCE = 28 V VCE = 28 V ICQ = 100 mA 125 15 — — — 16 −34 250 — — −30 — W dB dB pF TYPICAL PERFORMANCE SAFE OPERATING AREA 2/4 SD1407 T EST CIRCUIT C1 C2,C4 C3 C5 C6 : : : : : 24 - 200pF Arco 425 50 - 380pF Arco 465 9 - 180pF Arco 463 10 µF, Electrolytic, 35Vdc 0.01µF, 100V, Ceramic L1 L2,L5 L4 R1 : 4 Turns, #16 AWG, Tinned, 0.40” I.D. : 1 Turn, #22 AWG, Tinned, formed with VK-200 #4B Ferroxcube : 17 Turns, #18 Enameled Wire Wrapped Around R1 : 390Ω Resistor (2 Watt) 3/4 SD1407 P ACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0174 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4