SD1423

SD1423 R F & MICROWAVE TRANSISTORS 800-960MHz BASE STATION APPLICATIONS . . . . . . . 800 - 960 MHz 24 VOLTS EFFICIENCY 50% COMMON EMITTER GOLD METALLIZATION CLASS AB LINEAR OPERATION POUT = 15 W MIN. WITH 8.0 dB GAIN .2 3 0 6 LFL (M11 8 ) epoxy sealed O R DE R CODE SD1423 BRANDING SD1423 DESCRIPTION The SD1423 is a gold metallization epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation for cellular base station applications. The SD1423 is designed as a medium power output device or as the driver for the SD1424. PIN CONNECTION 1. Collector 2. Base 3. Emitter ABSOLUTE MAXIMUM RATINGS (T case = 25° C) Symbol Parameter Value Un it VCBO VCEO VCES VEBO IC PDISS TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 48 25 45 3.5 2.5 29 +200 − 65 to +150 V V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 6 °C/W August 22, 1996 1/4 SD1423 ELECTRICAL SPECIFICATIONS (T case = 25° C) STATIC S ym bo l Te s t C o n ditio n s Va lu e Min. Typ . Ma x. Un it BVCBO BVCEO BVEBO ICBO hFE IC = 5 0mA IC = 2 0mA IE = 5mA VC B = 2 4V VC E = 1 0V IE = 0mA IB = 0mA IC = 0mA IE = 0mA IC = 1 00mA 48 25 3.5 — 20 50 30 4.0 — — — — — 1.0 100 V V V mA — DYNAMIC S ym bo l Te s t C o nd itio ns Va lu e Min. Typ. Ma x. Un it POUT PG ηc COB f = 9 60 MHz f = 9 60 MHz f = 9 60 MHz f = 1 MHz VCC = 24 V VCC = 24 V VCC = 24 V VCB = 24V ICQ = 75 mA ICQ = 75 mA ICQ = 75 mA 15 8 45 — — — 50 20 — — — 24 W dB % pF TYPICAL PERFORMANCE P OWER OUT PUT vs P OWER INP UT IMPEDANCE DATA FREQ. 900 MHz 930 MHz 960 MHz POUT = 15 W VCE = 75 mA ICQ = 24 V ZIN (Ω) 1.30 + j 1.98 1.42 + j 2.31 1.45 + j 2.62 Z CL (Ω) 3.99 + j 5.55 3.18 + j 4.97 2.96 + j 4.07 2/4 SD1423 TEST CIRCUIT C1, C2 :0.8 - 8.0pfGigatrim Variable Capacitor C3, C6, C7, C8 :100pf ATC Chip Capacitor C4 : 10µF, 63V Electrolytic C5 : 0.1µF Capacitor CK06BX104K D1, D2 :SD1423 trasistors used as diodes L1, L3 :4 Turn, #22 AWG L2 : #22 AWG, Ferrite Core Q1: SD1423 Bias Transistor Q2: SD1423 transistor under test R1 : 1.5 kΩ, 1/4W Resistor R2 : 5KΩ ±5% Potentiometer Board Material: 3M Teflon Fiberglass Er = 2.55, H = .030” TEST CIRCUIT DIMENSIONS All dimensions in mils unless otherwise specified 3/4 SD1423 TEST CIRCUIT LAYOUT P ACKAGE MECHANICAL DATA Ref.: UDCS Doc. No.1010941 rev. B Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. ©1996 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - 4/4