SD1424

SD1424 RF & MICROWAVE TRANSISTORS 8 00-900 MHz BASE STATION APPLICATIONS . . . . . . . 800 - 900 MHz 24 VOLTS COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING CLASS AB LINEAR OPERATION P OUT = 30 W MIN. WITH 7.5 dB GAIN .250 x .320 4LFL (M156) epoxy sealed ORDER CODE SD1424 BRANDING SD1424 PIN CONNECTION DESCRIPTION The SD1424 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station application. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter VCBO VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 48 45 4.0 4 87.5 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance October 7, 1993 2.0 °C/W rev. 1 1/5 SD1424 E LECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCEO BVEBO I CBO hFE DYNAMIC Symbol IC = 50mA IC = 20mA IE = 5mA VCB = 24V VCE = 10V IE = 0mA IB = 0mA IC = 0mA IE = 0mA IC = 100mA 48 25 3.5 — 20 50 30 4.0 — — — — — 1.0 100 V V V mA — Test Conditions Value Min. Typ. Max. Unit POUT GP ηc COB Note: I CQ f = 960 MHz f = 960 MHz f = 960 MHz f = 1 MHz = 150mA PIN = 5.3 W POUT = 30 W POUT = 30 W VCB = 24 V VCC = 24 V VCC = 24 V VCC = 24 V (each side) 30 7.5 45 — — — 50 20 — — — 24 W dB % pF TYPICAL PERFORMANCE POWER OUTPUT vs POWER INPUT 2/5 rev. 1 SD1424 T EST CIRCUIT LAYOUT rev. 1 3/5 SD1424 TEST CIRCUIT C1, C2, C3 : C4, C5, C6, C7 : C8 : C9 : C10 : C11 : C12 : D1, D2 : SD1423 Devices 0.8 - 8pF Variable Capacitors 62pF 22µF 180pF 47µF, 63V 180pF 10µF, 63V L1, L2 L3 L4 L5 : : : : #22 AWG with Ferrite Core 4 Turns, #22 AWG 2 Turns, #22 AWG 5 Turns, #22 AWG T1, T2 : Material: λ /4 Transformers Epsilam 10, Er = 10.5, Height = .050” 4/5 rev. 1 SD1424 P ACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0156 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A rev. 1 5/5