SD1433

SD1433 RF & MICROWAVE TRANSISTORS U HF MOBILE APPLICATIONS . . . . . . 470 MHz 12.5 VOLTS CLASS C EFFICIENCY 60% COMMON EMITTER P OUT = 10 W MIN. WITH 8.0 dB GAIN .280 4L STUD (M122) epoxy sealed ORDER CODE SD1433 BRANDING SD1433 PIN CONNECTION DESCRIPTION The SD1433 is a Class C epitaxial silicon NPN planar transistor designed for driver applications in the 450 - 512 MHz frequency range. This device uses an emitter ballasted geometry specifically designed for optimum stable power gain, maximum efficiency and infinite VSWR. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base 4. Emitter VCBO VCEO VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 36 16 36 4.0 2.5 58 +200 − 65 to +150 V V V V A W °C °C °C/W 1/5 THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistance 3.0 SD1433 E LECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCES BVCEO BVEBO ICES I CBO hFE IC = 25mA IC = 20mA IE = 10mA VCE = 10V VCB = 15V VCE = 5V VBE = 0V IB = 0mA IC = 0mA IE = 0mA IE = 0mA IC = 1A 36 16 4.0 — — 10 — — — — — — — — — 3 2 — V V V mA mA — DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT GP COB f = 470 MHz f = 470 MHz f = 1 MHz PIN = 2.0 W POUT = 10 W VCB = 12.5 V VCE = 12.5 V VCE = 12.5 V 10 7 — — — 19 — — — W dB pF TYPICAL PERFORMANCE POWER OUTPUT vs POWER INPUT POWER GAIN & EFFICIENCY vs POWER INPUT POWER OUTPUT vs FREQUENCY 2/5 SD1433 IMPEDANCE DATA T YPICAL INPUT IMPEDANCE TYPICAL COLLECTOR LOAD IMPEDANCE FREQ. 470 MHz ZIN (Ω) 1.5 − j 2.7 Z CL (Ω) 5.7 + j 1.5 3/5 SD1433 TEST CIRCUIT C1, C2 C3 C4, C5 C6 C7 C8, C9 C10 : : : : : : : 0.8pF Voltronics 18pF Chip Capacitor AJ810 1000pF Chip Capacitor 0.01µF Disc Ceramic 1000pF Unelco 10µF, 35V Electrolytic L1 L2 L3 : 0.47µH Molded Choke : 2 Turns, #20 AWG, 1/8” I.D. : 2 Turns in Ferroxcube VK200/19-4B Board Material: 3M-K6098, 1/16” Thick 4/5 SD1433 P ACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0122 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 5/5