SD1455

SD1455 RF & MICROWAVE TRANSISTORS T V/LINEAR APPLICATIONS . . . . . . . . . 170 - 230 MHz 25 VOLTS IMD − 55dB COMMON EMITTER GOLD METALLIZATION HIGH SATURATED POWER CAPABILITY DIFFUSED EMITTER BALLAST RESISTORS DESIGNED FOR HIGH POWER LINEAR OPERATION P OUT = 20 W MIN. WITH 8.0 dB GAIN .500 4L STUD (M130) epoxy sealed ORDER CODE SD1455 BRANDING SD1455 PIN CONNECTION DESCRIPTION The SD1455 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class A operation in VHF and Band III television transmitters and transposers. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base 4. Emitter VCEO VCES VEBO IC PDISS TJ T STG Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 35 60 4.0 8.0 140 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance July 1993 1.5 °C/W 1/4 SD1455 E LECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCER BVCEO BVEBO ICES hFE DYNAMIC Symbol IC = 50 mA IC = 50 mA IC = 50 mA IE = 10 mA VCE = 50 V VCE = 5 V IE = 0 mA RBE = 10 Ω IB = 0 mA IC = 0 mA VBE = 0 V IC = 1 A 65 60 35 4.0 — 20 — — — — — — — — — — 5 120 V V V V mA — Test Conditions Value Min. Typ. Max. Unit POUT GP IMD3* COB Note: f = 225 MHz f = 225 MHz POUT = 14 W f = 1 MHz VCE = 25 V VCE = 25 V VCE = 25 V VCB = 30 V IC = 2.5 A IC = 2.5 A IC = 2.5 A 20 8.0 — — — 9.0 −55 — — — — 85 W dB dBc pF * f = 225 MHz 3 Tone Testing Visi on Carrier Sideband Sound Carrier −8dB/ ref − 7dB/ ref Carrier − 16dB/ref TYPICAL PERFORMANCE INTERMODULATION DISTORTION vs POWER OUTPUT POWER OUTPUT vs POWER INPUT 2/4 SD1455 TYPICAL PERFORMANCE (CONT’D) THERMAL RESISTANCE vs CASE TEMPERATURE SAFE OPERAITNG AREA IMPEDANCE DATA FREQ. Z CL ZIN 150 MHz 250 MHz Z IN (Ω) 1.0 + j 1.0 1.0 + j 2.0 ZCL (Ω) 9.0 + j 5.0 6.0 + j 6.0 VCE = 28 V IC = 2.5 A Normalized to 50 Ohms 3/4 SD1455 P ACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0130 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4