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SD1458

SD1458

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    SD1458 - RF & MICROWAVE TRANSISTORS TVLINEAR APPLICATIONS - STMicroelectronics

  • 详情介绍
  • 数据手册
  • 价格&库存
SD1458 数据手册
SD1458 RF & MICROWAVE TRANSISTORS T V\LINEAR APPLICATIONS . . . . . . . . . 170 - 230 MHz 28 VOLTS IMD −55 dB COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING HIGH SATURATED POWER CAPABILITY DESIGNED FOR HIGH POWER LINEAR OPERATION P OUT = 14 W MIN. WITH 14.0 dB GAIN .500 6LFL (M111) epoxy sealed ORDER CODE SD1458 BRANDING SD1458 PIN CONNECTION DESCRIPTION The SD1458 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class A operation in VHF and band III television transmitters and transposers. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Emitter VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 60 35 4.0 10 140 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance November 1992 1.5 °C/W 1/5 SD1458 E LECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCER BVCEO BVEBO ICES hFE IC = 50mA IC = 50mA IE = 10mA VCE = 50V VCE = 5V RBE = 10Ω IB = 0mA IC = 0mA IE = 0mA IC = 1A 60 35 4.0 — 10 — — — — — — — — 5 100 V V V mA — DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT GP IMD3 COB Note: f = 225 MHz f = 225 MHz f = 225 MHz f = 1 MHz VCE = 28 V VCE = 28 V VCE = 28 V VCB = 28 V IC = 2.5 A IC = 2.5 A IC = 2.5 A 14 14 — — — — — — — — −55 80 W dB dBc pF IMD 3 - Vi sion Carrier - 8dB - Sound Carri er - 7dB - Si deband Carri er - 16dB 2/5 SD1458 T YPICAL PERFORMANCE POWER OUTPUT vs POWER INPUT IMD vs POWER OUTPUT THERMAL RESISTANCE vs CASE TEMPERATURE 3/5 SD1458 P ACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0111 4/5 SD1458 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 5/5
SD1458
1. 物料型号: - 型号为SD1458,由ST SGS-THOMSON MICROELECTRONICS生产。

2. 器件简介: - SD1458是一款采用金金属化外延硅NPN平面晶体管,使用扩散发射极电阻器实现高线性A类操作,适用于VHF和III波段电视发射机和变频器。

3. 引脚分配: - 1. Collector(集电极) - 2. Base(基极) - 3. Emitter(发射极) - 4. Emitter(发射极)

4. 参数特性: - 绝对最大额定值: - VCBO(集电极-基极电压):60V - VCEO(集电极-发射极电压):35V - VEBO(发射极-基极电压):4.0V - IC(器件电流):10A - PDISS(功率耗散):140W - TJ(结温):+200°C - TSTG(储存温度):-65至+150°C - 热阻RTH(j-c):1.5°C/W

5. 功能详解: - 设计用于高功率线性操作,具有高饱和功率能力和高增益。在170-230 MHz频段,28V IMD -55dB,共发射极配置,输出功率至少为14W,增益至少为14.0dB。

6. 应用信息: - 适用于VHF和III波段电视发射机和变频器的高线性A类操作。

7. 封装信息: - 文档提供了封装的机械数据图纸编号12-0111,具体尺寸数据以英寸和毫米为单位给出,包括最小和最大尺寸。
SD1458 价格&库存

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