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SD1476

SD1476

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    SD1476 - RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS - STMicroelectronics

  • 详情介绍
  • 数据手册
  • 价格&库存
SD1476 数据手册
SD1476 RF & MICROWAVE TRANSISTORS T V/LINEAR APPLICATIONS . . . . . . . . . . 55 - 88 MHz 32 VOLTS COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING CLASS AB PUSH PULL HIGH SATURATED POWER CAPABILITY DIFFUSED EMITTER BALLAST RESISTORS DESIGNED FOR HIGH POWER LINEAR OPERATION P OUT = 240 W MIN. WITH 12.0 dB GAIN 2 x .437 x .450 2LFL (M165) epoxy sealed ORDER CODE SD1476 BRANDING SD1476 PIN CONNECTION DESCRIPTION The SD1476 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in VHF and Band I television transmitters and transposers. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 70 40 4.0 25 430 +200 − 50 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance November 1992 0.4 °C/W 1/8 SD1476 E LECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCER BVCEO BVEBO I CEO I CBO hFE DYNAMIC Symbol IC = 50mA IC = 50mA IC = 100mA IE = 20mA VCE = 30V VCB = 30V VCE = 5V IE = 0mA RBE = 51Ω IB = 0mA IC = 0mA IE = 0mA IE = 0mA IC = 7A 70 68 40 4.0 — — 10 — — — — — — — — — — — 10 10 50 V V V V mA mA — Test Conditions Value Min. Typ. Max. Unit POUT * GP ηc COB Note: f = 88 MHz f = 88 MHz f = 88 MHz f = 1 MHz VCE = 32 V VCE = 32 V VCE = 32 V VCB = 28 V ICQ = 2 x 400mA ICQ = 2 x 400mA ICQ = 2 x 400mA 240 12 50 — — — — — — — — 220 W dB % pF *1 dB Compression 2/8 SD1476 T YPICAL PERFORMANCE POWER OUTPUT vs POWER INPUT POWER GAIN vs FREQUENCY THERMAL RESISTANCE vs CASE TEMPERATURE COLLECTOR EFFICIENCY vs FREQUENCY 3/8 SD1476 IMPEDANCE DATA T YPICAL INPUT IMPEDANCE Z IN TYPICAL COLLECTOR LOAD IMPEDANCE Z CL FREQ. 55 MHz 65 MHz 75 MHz 90 MHz POUT = 240 W VCC = 32 V ZIN (Ω) 1.7 j 1.0 1.5 + j 1.3 1.0 + j 1.1 0.8 + j 0.4 ZCL (Ω) 6.1 + j 1.0 7.0 + j 2.1 6.2 + j 2.0 3.4 + j 4.4 4/8 SD1476 P RINTED CIRCUIT BOARD LAYOUT 5/8 SD1476 TEST CIRCUIT C1 C2 C3, C’3 C4 C5 C6 C7 C8, C’8 C9 C10 C11 C12, C’12 C13, C’13 C14, C’14 : : : : : : : : : : : : : : 10pF + 33pF, ATC 100B 47pF, ATC 100B 1.5nF + 2.2nF, ATC 100B 4 - 60pF, Arco 404 2 x 100pF + 47pF, ATC 100B 2 x 330pF + 3 x 180pF +270pF, ATC 100B 150pF + 10pF, ATC 100B 4.7nF, ATC 100B 4 - 40pF, Arco 403 10pF, ATC 100B 43pF, ATC 100B 1µF 63V, LCC CPM13B 82nF 100V, LCC 745 270nF 63V, LCC7950 L1, L7 L2 L3, L’3 L4, L’4 L5, L’5 L6 L8, L’8 L9, L’9 : : : : : : : : 4 Turns Diameter 7mm, Wire Diameter 1.5mm 7 Turns Diameter 25mm, Coaxial Cable Zc = 25Ω 2 Turns Diameter 2.5mm, Wire Diameter 0.8mm Length 15mm, Wire Diameter 1.5mm Length 30mm, Wire Diameter 1.5mm 6 Turns Diameter 25mm, Coaxial Cable Zc = 25Ω 16 Turns Diameter, Wire Diameter 1.5mm 1 Turn, Wire Diameter 1.5mm in Ferrite (stackpole 57 33 12) L10, L’10 L11, L’11 : 14 Turns, Wire Diameter 0.6mm Around Resistor 1W R1, R’1 R2, R’2 : 180Ω , 1W Material : Epoxy 63 mil, Er = 2.55 6/8 SD1476 P ACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0165 7/8 SD1476 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 8/8
SD1476
物料型号: - 型号为SD1476,由ST SGS-THOMSON MICROELECTRONICS生产。

器件简介: - SD1476是一款金镀层外延硅NPN平面晶体管,使用扩散发射极电阻器,适用于VHF和I波段电视发射机和转播器的高线性Class AB操作。

引脚分配: - 1. Collector(集电极) - 2. Base(基极) - 3. Emitter(发射极)

参数特性: - 绝对最大额定值(Tcase = 25°C): - VCBO(集电极-基极电压):70V - VCEO(集电极-发射极电压):40V - VEBO(发射极-基极电压):4.0V - Ic(器件电流):25A - PpISS(功率耗散):430W - TJ(结温):+200°C - TSTG(储存温度):-50至+150°C

功能详解: - SD1476设计用于高功率线性操作,具有内部输入匹配和Class AB推挽能力,最小输出功率为240W,增益至少为12.0dB。

应用信息: - 适用于高线性Class AB操作的VHF和I波段电视发射机和转播器。

封装信息: - 封装为2LFL (M165)环氧树脂密封,尺寸为2 x 0.437 x 0.450英寸。
SD1476 价格&库存

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