SD1492

SD1492 RF & MICROWAVE TRANSISTORS T V/LINEAR APPLICATIONS . . . . . . . . . 470 - 860 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION INTERNAL INPUT MATCHING P OUT = 150 W MIN. WITH 6.5 dB GAIN 2 x .437 x .450 2LFL (M175) epoxy sealed ORDER CODE SD1492 BRANDING SD1492 PIN CONNECTION DESCRIPTION The SD1492 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in UHF and Band IV, V television transmitters and transposers. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 60 30 3.0 25 318 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 0.55 °C/W November 1992 1/7 SD1492 E LECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCEO BVEBO ICES hFE I C = 100mA I C = 100mA I E = 50mA VCE = 28V VCE = 5V IE = 0mA IB = 0mA IC = 0mA IE = 0mA IC = 3A 60 30 3.0 — 15 — — — — — — — — 10 70 V V V mA — DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT * PG* η c* COB Note: f = 860 MHz POUT = 150 W POUT = 150 W f = 1 MHz VCE = 28 V VCE = 28 V VCE = 28 V VCB = 28 V ICQ = 2 x 500 mA ICQ = 2 x 500 mA ICQ = 2 x 500 mA 150 6.5 45 — — — — — — — — 100 W dB % pF * 1 dB Compressi on Poi nt 2/7 SD1492 T YPICAL PERFORMANCE POWER OUTPUT vs POWER INPUT BROADBAND POWER GAIN vs FREQUENCY INTERMODULATION DISTORTION vs POWER OUTPUT COLLECTOR EFFICIENCY vs FREQUENCY SAFE OPERATING AREA THERMAL RESISTANCE vs CASE TEMPERATURE 40 35 30 25 20 15 10 5 0 0 5 10 15 20 25 30 35 40 3/7 SD1492 IMPEDANCE DATA FREQ. 900 MHz 860 MHz 700 MHz 650 MHz 550 MHz 470 MHz ZIN (Ω) 2.65 + j 0.8 3.2 + j 1.6 2.0 + j 2.4 1.0 + j 1.3 0.6 + j 0.4 0.3 − j 1.2 Z CL (Ω) 2.4 − j 1.6 2.3 − j 0.9 1.5 − j 0.8 — — 1.2 − j 1.3 700 MHz ZIN 860 MHz 650 MHz 550 MHz 900 MHz ZCL 700 MHz 860 MHz 470 MHz 470 MHz 900 MHz 4/7 SD1492 P HOTOMASTER OF TEST CIRCUIT TEST CIRCUIT B1, B2 : Coaxial Cable 25, 43mm C1, C2 C6, C7 : 330pF, ATC 100B C3 : .8 - 8pF Johanson Gigatrim C4 : 4.7pF + 3.9pF, ATC 100B C5 : 3.9pF + 1.7pF, ATC 100B + .8 - 8pF Johanson Gigatrim C8 : 120pF, ATC 100B C9 : 1.5nF, ATC 100B C10 : 10nF + 47µF, 63V C11 : 1.5nF, ATC 100B + 10nF C12 : 470pF + 1.5nF, ATC 100B + 100µF, 63V Substrate: Teflon Glass Er = 2.55, 30Mils L1, L18 L2, L17 L3, L16 L4, L15 L5 L6 L7 L8 L9, l10 L11 L12 L13 L14 L19 L20 L21, L22 : : : : : : : : : : : : : : : : Printed Line 50Ω Printed Line 26.7Ω, 10mm Printed Line 60Ω , 10.5mm Printed Line 50Ω , 43mm Printed Line 25Ω , 13.5mm Printed Line 21Ω , 15mm Printed Line 10.5Ω, 12.5mm Printed Line 8Ω, 7.5mm Printed Line 50Ω , 10mm Printed Line 9.5Ω , 10.5mm Printed Line 11Ω , 14.5mm Printed Line 15.5Ω, 8.5mm Printed Line 19Ω , 3.5mm 2 Turns, #16 AWG 8 Turns, #16 AWG 12 Turns, #22 AWG 5/7 SD1492 BIAS VOLTAGE SOURCE C15 C16 C17 C18 D1 D2 D3 : : : : 10nF + 100nF + 10 µF 10nF 1µF 1.2nF + 27nF + 10 µF : AAY 49 Ge Diode Thermally Connected with Q3 heatsink : 1N 400S - Si Diode Thermally Connected with Q3 heatsink : 1n 400S - Si Diode Thenmally Connected with SD1492 (RF Transistors) Flange L6, L9 : Ferrite Choice Q R6 R7 : Box 63B : 100Ω Trimpot : 470Ω, 1/2W 6/7 SD1492 P ACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0175 rev. A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibili ty for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. ©1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 7/7