SD1540-08

SD1540-08 RF & MICROWAVE TRANSISTORS A VIONICS APPLICATIONS . . . . . . . . . DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS 350 WATTS (typ.) IFF 1030 - 1090 MHz 300 WATTS (min.) DME 1025 - 1150 MHz 290 WATTS (typ.) TACAN 960 - 1215 MHz 6.3 dB MIN. GAIN REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS 20:1 LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS INPUT/OUTPUT MATCHED, COMMON BASE CONFIGURATION .400 x .400. 2LFL (M138) hermetically sealed ORDER CODE SD1540-08 BRANDING SD1540-8 PIN CONNECTION DESCRIPTION The SD1540-08 is a gold metallized silicon, NPN power transistor designed for applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. The SD1540 is packaged in a metal/ceramic package with internal input/output matching resulting in improved broadband performance and a low thermal resistance. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base VCBO VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 65 3.5 22 875 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance November 1992 0.20 °C/W 1/5 SD1540-08 E LECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCES BVEBO ICES hFE IC = 10mA IC = 25mA IE = 5mA VCE = 50V VCE = 5V IE = 0mA VBE = 0V IC = 0mA IE = 0mA IC = 1A 65 65 3.5 — 10 — — — — — — — — 25 — V V V mA — DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT GP ηC Note: f = 1025 — 1150MHz PIN = 70 W f = 1025 — 1150MHz PIN = 70 W f = 1025 — 1150MHz PIN = 70 W VCE = 50 V VCE = 50 V VCE = 50 V 300 6.3 35 — — — — — — W dB % Pulse W idth = 10 µSec, Duty Cycle = 1% This device i s sui table f or use under other pulse widt h/duty cycle condit ions. Please contact the fact ory for specific appli cat ions assi stance. TYPICAL PERFORMANCE POWER OUTPUT vs POWER INPUT POWER OUTPUT vs FREQUENCY 2/5 SD1540-08 TYPICAL PERFORMANCE (cont’d) EFFICIENCY vs POWER INPUT EFFICIENCY vs FREQUENCY IMPEDANCE DATA T YPICAL INPUT IMPEDANCE TYPICAL COLLECTOR LOAD IMPEDANCE 3/5 SD1540-08 TEST CIRCUIT All Dimension are in Inches C1,C2. C3, C4 : .6 - 4.5pF JOHANSON Gigatrim C5 : 1000µF, 63V, Electrolytic C6 : 100pF Chip Capacitor Across .090 Gap L1 L2 : 2 Turns #24 .12 I.D., Spaced Wire Diameter : 4 Turns #24, .07 I.D., Spaced Wire Diameter Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 : : : : : .404 x .075 .263 x .995 .483 x .077 .350 x 1.203 .505 x 1.200 with Two Notches .05 Long By .068 Wide : .335 x .076 : .260 x .442 : .310 x .082 4/5 SD1540-08 P ACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0138 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 5/5