SD1541-01

SD1541-01 RF & MICROWAVE TRANSISTORS A VIONICS APPLICATIONS . . . . . . . DESIGNED FOR HIGH POWER PULSED IFF AND DME APPLICATIONS 400 (min.) DME 1025 - 1150 MHz 6.5 dB MIN. GAIN REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS 30:1 LOAD VSWR CAPABILITY AT SPECIFICIED OPERATING CONDITIONS INPUT/OUTPUT MATCHED, COMMON BASE CONFIGURATION .400 x .500 2LFL (M112) hermetically sealed ORDER CODE SD1541-01 BRANDING SD1541-1 PIN CONNECTION DESCRIPTION The SD1541-01 is a hermetically sealed, gold metallized, silicon NPN power transistor. The SD154101 is designed for applications requiring high peak power and low duty cycles such as DME. The SD1541-01 is packaged in a hermetic metal/ceramic package with internal input/output matching, resulting in improved broadband performance and a low thermal resistance. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base VCBO VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 65 3.5 22 1458 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance November 1992 0.12 °C/W 1/5 SD1541-01 E LECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCES BVEBO ICES hFE IC = 25mA IC = 50mA IE = 10mA VCE = 50V VCE = 5V IE = 0mA VBE = 0V IC = 0mA IE = 0mA IC = .25A 65 65 3.5 — 5 — — — — — — — — 25 200 V V V mA — DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT GP Note: f = 1025 — 1150MHz PIN = 90 W f = 1025 — 1150MHz PIN = 90 W VCE = 50 V VCE = 50 V 400 6.5 — — — — W dB Pulse W idth = 10 µSec, Duty Cycle = 1% This device i s sui table f or use under other pulse widt h/duty cycle condit ions. Please contact the fact ory for specific appli cat ions assi stance. TYPICAL PERFORMANCE POWER OUTPUT vs POWER INPUT POWER OUTPUT vs FREQUENCY 2/5 SD1541-01 IMPEDANCE DATA FREQ. 1020 MHz 1090 MHz 1150 MHz ZIN (Ω) 2.898 + j 4.1 2.325 + j 3.4 1.994 + j 2.8 Z CL (Ω) 1.382 − j 3.2 1.338 − j 2.8 1.269 − j 2.5 T EST CIRCUIT All Dimensions in Inches Unless Otherwise specified C1 : 0.4 - 2.5pF Johanson Gigatrim C2, C3, C4 : 0.6 - 4.5pF Johanson Gigatrim C5 : 82pF Chip Capacitor, .055 Sq. L1 L2 Z1 Z2 : Loop, #18 Tinned, .36 Wide x .27 above Circuit : 4 3/4 Turns, #24 En., C.W., .075 I.D. : 50Ω(.02 Wide) : .250 x .120 Z3 Z4 Z5 Z6 Z7 Z8 Z9 : : : : : : : 50Ω .020 x .330; C1 tapped .15 from Load .145 x .920 .325 x .180 .730 x .315 .710 x .425 with .140 x .150 cutout .35 x .780; C4 Tapped .36 from Cen 50Ω C1, C4 : Cold End Terminated Through Eyelet. 3/5 SD1541-01 P C BOARD LAYOUT 4/5 SD1541-01 P ACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0112 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 5/5