SD1542-42

SD1542-42 R F & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . . DESIGNED FOR HIGH POWER PULSED IFF 600 WATTS (min.) IFF 1030 or 1090 MHz REFRACTORY GOLD METALLIZATION 6.0 dB MIN. GAIN LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS 30:1 LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS INPUT MATCHED, COMMON BASE CONFIGURATION .400 x .500 2LFL (M112) hermetically sealed ORDER CO DE SD1542-42 BRANDING SD1542-42 PIN CONNECTION DESCRIPTION The SD1542-42 is a hermetically sealed, gold metallized, silicon NPN power transistor. The SD154242 is designed for applications requiring high peak power and low duty cycles such as IFF. The SD1542-42 is packaged in a hermetic metal/ceramic package with internal input matching, resulting in improved broadband performance and low thermal resistance. 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Valu e Un it VCC IC PDISS TJ T STG Collector-Supply Voltage* Device Current* Power Dissipation* Junction Temperature Storage Temperature (TC ≤ 100°C) 55 45 1670 +200 − 65 to +200 V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.06 °C/W * Applies only to rated RF operation. June 14, 1995 1/4 SD1542-42 E LECTRICAL SPECIFICATIONS (T case = 25 °C) STATIC Symbo l T est Co nditions Value Min . T yp. Max. Unit BVCBO BVCER BVEBO ICES hFE IC = 25 mA IC = 25 mA IE = 10 mA VCE = 50 V VCE = 5 V IE = 0 mA RBE = 10 Ω IC = 0 mA VBE = 0 V IC = 2 A 65 65 3.5 — 10 — — — — — — — — 60 250 V V V mA — DYNAMIC Symbo l Test Cond ition s Valu e Min. T yp. Max. Un it POUT ηC GP Note: f = 1090 MHz f = 1090 MHz f = 1090 MHz = 10 µ S ec, Duty Cycle PIN = 150 W PIN = 150 W PIN = 150 W = 1% VCC = 50 V VCC = 50 V VCC = 50 V 600 35 6.0 680 40 6.6 — — — W % dB Pul se Wi dth TYPICAL PERFORMANCE POWER OUTPUT vs POWER INPUT 900 800 PO ERO W UTPUT atts) (W 700 600 500 400 300 200 0 60 A - T Circuit est B - 1030M Circuit Hz A B POWER OUTPUT vs FREQUENCY 800 700 PO ERO W UTPUT atts) (W 600 500 400 300 200 T Circuit turned narrowband est Vcc =50V Tc=25°C PW=10µsec DC=1% 80 100 120 140 POW ERINPU atts) T(W 160 180 100 1030 PIN= 150W VCC= 50V TC= 25°C PW= 10µsec DC=1% 1110 1050 1070 1090 FREQ CY(M UEN Hz) June 14, 1995 2/4 SD1542-42 TEST CIRCUIT (1090 MHz) Ref.: Dwg. No. C125410 1030 MHz TYPICAL CIRCUIT June 14, 1995 3/4 SD1542-42 P ACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0112 rev. G Information furnished is believed to be accurate and reliable. However, SGS-T HOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifi cations mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. ©1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIE S Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. June 14, 1995 4/4