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SD1542

SD1542

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    SD1542 - RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS - STMicroelectronics

  • 数据手册
  • 价格&库存
SD1542 数据手册
SD1542-04 RF & MICROWAVE TRANSISTORS A VIONICS APPLICATIONS . . . . . . . DESIGNED FOR HIGH POWER PULSED IFF 600 WATTS (min.) IFF 1030/1090 MHz REFRACTORY GOLD METALLIZATION 6.0 dB MIN. GAIN BALLASTING AND LOW THERMAL REISTANCE FOR RELIABILITY AND RUGGEDNESS 30:1 LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS INPUT MATCHED, COMMON BASE CONFIGURATION .400 x .500 2LFL (M112) hermetically sealed ORDER CODE SD1542-04 BRANDING SD1542-4 PIN CONNECTION DESCRIPTION The SD1542-04 is a hermetically sealed, gold metallized, silicon NPN power transistor. The SD154204 is designed for applications requiring high peak power and low duty cycles such as IFF. The SD1542-04 is packaged in a hermetic metal/ceramic package with internal input matching, resulting in improved broadband performance and low thermal reistance. ABSOLUTE MAXIMUM RATINGS (T case = 2 5 ° C) Symbol Parameter 1. Collector 2. Base 3. Emitter 4. Base Value Unit VCBO VCES VEBO IC PDISS TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 65 3.5 40 1350 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistance 0.06 °C/W 1/5 SD1542-04 E LECTRICAL SPECIFICATIONS ( T case = 2 5 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO ICES hFE IC = 25mA IE = 10mA VCE = 50V VCE = 5V IE = 0mA IC = 0mA IE = 0mA IC = 1A 65 3.5 — 5 — — — — — — 35 200 V V mA — DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT GP Note: f = 1090 MHz f = 1090 MHz = 1 0 µ Sec, Duty Cyle PIN = 150 W PIN = 150 W = 1% VCE = 50 V VCE = 50 V 600 6.0 — — — — W dB Pulse Width TYPICAL PERFORMANCE POWER OUTPUT vs POWER INPUT POWER OUTPUT vs FREQUENCY 2/5 SD1542-04 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE TYPICAL COLLECTOR LOAD IMPEDANCE 3/5 SD1542-04 T EST CIRCUIT C1, C2, C3 : C4 : C5 : C6 : C7 : L1 L2 .8 - 4.8pF Gigatrim 120pF Chip Capacitor 680pF Chip Capacitor 1000µF 63Vdc Electrolytic 56pF Chip Capacitor : 100mils Wide Brass Strip : #18 AWG Wire Z1 Z2 Z3 Z4 Z5 Z6 Z7 : : : : : : : 510 mils x 20mils 120mils x 380mils 210mils x 20mils 270mils x 725mils 400mils x 720mils 340mils x 20 mils 245mils x 20 mils CIRCUIT BOARD LAYOUT 4/5 SD1542-04 P ACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0112 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 5/5
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