SD1563

SD1563 RF & MICROWAVE TRANSISTORS U HF PULSED APPLICATIONS . . . . . . 350 WATTS @ 10 µSEC PULSE WIDTH, 10% DUTY CYCLE 300 WATTS @ 250 µ SEC PULSE WIDTH, 10% DUTY CYCLE 9.5 dB MIN. GAIN REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS INFINITE VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS .400 x .400 2LFL (M106) hermetically sealed ORDER CODE SD1563 BRANDING SD1563 PIN CONNECTION DESCRIPTION The SD1563 is a gold metallized silicon NPN pulse power transistor. The SD1563 is designed for applications requiring high peak power and low duty cycles within the frequency range of 400 - 500 MHz. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter 1. Collector 2. Base 3. Emitter 4. Base Value Unit VCBO VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 65 3.5 21.6 875 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) September 7, 1994 Junction-Case Thermal Resistance 0.2 °C/W 1/7 SD1563 E LECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCES BVCEO BVEBO ICES hFE I C = 50 mA I C = 50 mA I C = 50 mA I E = 10 mA VCE = 30 V VCE = 5 V IE = 0 mA VBE = 0 V IB = 0 mA IC = 0 mA IE = 0 mA IC = 5 A 65 65 28 3.5 — 10 — — — — — — — — — — 7.5 100 V V V V mA — DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT PG ηc Note: f = 425 MHz f = 425 MHz f = 425 MHz = PIN = 33.5 W POUT = 300 W PIN = 25 W = 10% VCE = 40 V VCE = 40 V VCE = 40 V 300 9.5 55 — — — — — — W dB % Pulse W idth 250 µ Sec, Dut y Cyle TYPICAL PERFORMANCE POUT (W) 360 350 325 310 300 P.W. (µ Sec) 10 20 100 500 1000 D.C. (%) 10 10 10 10 10 TJ (°C max.) 150 150 150 150 150 VCC 40 40 40 40 40 2/7 SD1563 T YPICAL PERFORMANCE (P.W. = 120 µ Sec) POWER OUTPUT vs POWER INPUT POWER GAIN vs FREQUENCY POWER OUTPUT vs COLLECTOR VOLTAGE EFFICIENCY vs POWER INPUT 3/7 SD1563 TYPICAL PERFORMANCE (P.W. = 120 µ Sec) EFFICIENCY vs FREQUENCY EFFICIENCY vs COLLECTOR VOLTAGE I MPEDANCE DATA (P.W. = 120 µ Sec) TYPICAL INPUT IMPEDANCE TYPICAL COLLECTOR LOAD IMPEDANCE 4/7 SD1563 T YPICAL PERFORMANCE (P.W. = 250 µ Sec) POWER GAIN vs FREQUENCY EFFICIENCY vs FREQUENCY POWER OUTPUT vs FLANGE TJ @ CONSTANT 125 °C THERMAL RESISTANCE vs PULSE WIDTH 5/7 SD1563 I MPEDANCE DATA (P.W. = 250 µ Sec) TYPICAL INPUT IMPEDANCE TYPICAL COLLECTOR LOAD IMPEDANCE 6/7 SD1563 P ACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0106 rev. B Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibili ty for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. ©1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 7/7