SD1565

SD1565 RF & MICROWAVE TRANSISTORS U HF PULSED APPLICATIONS . . . . . . 500 WATTS @ 250 µ Sec PULSE WIDTH, 10% DUTY CYCLE REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW RESISTANCE FOR RELIABILITY AND RUGGEDNESS INFINITE VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS INPUT MATCHED, COMMON BASE CONFIGURATION BALANCED CONFIGURATION .400 x .500 4LFL (M102) hermetically sealed ORDER CODE SD1565 BRANDING SD1565 PIN CONNECTION DESCRIPTION The SD1565 is a hermetically sealed, gold metallized silicon NPN pulse power transistor mounted in a common base balanced configuration. The SD1565 is designed for applications requiring high peak power and low duty cycles within the frequency range of 400 - 500 MHz. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base VCBO VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 65 3.5 43.2 1167 +200 − 65 to +200 V V V A W °C °C THERMAL DATA RTH(j-c) July 19, 1994 Junction-Case Thermal Resistance 0.15 °C/W 1/6 SD1565 E LECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCES BVEBO ICES hFE I C = 50 mA I C = 50 mA I E = 10 mA VCE = 30 V VCE = 5 V IE = 0 mA VBE = 0 V IC = 0 mA IE = 0 mA IC = 5 A 65 65 3.5 — 20 — — — — — — — — 15 200 V V V mA — DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT PG ηc Note: f = 425 MHz f = 425 MHz f = 425 MHz PIN = 54 W PIN = 54 W PIN = 54 W VCE = 40 V VCE = 40 V VCE = 40 V 500 9.7 50 — — — — — — W dB % Pulse W idth = 250 µ Sec, Dut y Cycle = 1 0% This device i s sui table f or use under other pulse widt h/duty cycle condit ions. Please contact the fact ory for specific appli cat ions assi stance. TYPICAL PERFORMANCE (P.W. = 250 µ S, D.C. = 10%) POWER OUTPUT vs POWER INPUT POWER GAIN vs FREQUENCY 2/6 SD1565 T YPICAL PERFORMANCE (P.W. = 250 µ S, D.C. = 10%) EFFICIENCY vs POWER INPUT EFFICIENCY vs FREQUENCY IMPEDANCE DATA (P.W. = 250 µ S, D.C. = 10%) TYPICAL INPUT IMPEDANCE TYPICAL COLLECTOR LOAD IMPEDANCE 3/6 SD1565 T YPICAL PERFORMANCE (P.W. = 60 µ S, D.C. = 2%) POWER OUTPUT vs POWER INPUT POWER GAIN vs FREQUENCY EFFICIENCY vs POWER INPUT EFFICIENCY vs FREQUENCY 4/6 SD1565 I MPEDANCE DATA (P.W. = 60 µ S, D.C. = 2%) TYPICAL INPUT IMPEDANCE TYPICAL COLLECTOR LOAD IMPEDANCE TEST CIRCUIT C3, C5 C4, C8 C6 C7 C9 C10 C12, C15 C13, C16 C14, C17 : : : : : : : : : 8pF 50 mil square .4 - 4.5pF Johanson JMC #27273 39pF 50mil square 39pF Chip Capacitor 20pF Chip Capacitor 12pF Chip Capacitor .1µF 1000pF Chip Capacitor 1000µF L1, L2 : 1” PC #18 Tinned Wire (mounted flat to PC Board) L3, L4 : 2T #18 Tinned Wire, 0.25” I.D. Baluns are 4.8” UT-141 Coax, Spaced to fit from coax connectors to the 25 Ohm lines. Note: 3M Epsilom 6 PC Board .030” Thick 5/6 SD1565 P ACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0102 rev. F Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibili ty for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. ©1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 6/6