SD1650

SD1650 RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION DOUBLE STEP INPUT/OUTPUT MATCH 850-960 MHz CLASS AB LINEAR COMMON EMITTER P OUT = 60 W MIN. WITH 7 dB MIN GAIN .400 6LFL (M169) epoxy sealed ORDER CODE SD1650 BRANDING SCELL500 PIN CONNECTION DESCRIPTION Designed for 900 MHz cellular radio base station applications, the SD1650 exhibits high collector efficiency with excellent thermal characteristics. Double-section internal input/output matching result in terminal impedance levels easily handled by the circuit designer. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter 1. Collector 2. Base 3. Emitter Value Unit VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation (+25°C) Junction Temperature Storage Temperature 60 28 4.0 10 175 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 1.5 °C/W *Applies only to rated RF amplifier operation August 1992 1/5 SD1650 E LECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Valu e Min. Typ. Max. Unit BVCBO BVEBO BVCES BVCEO I CEO hFE IC = 50mA IE = 20mA IC = 100mA IC = 100mA VCE = 24V VCE = 5V IC = 6A 60 3.0 60 28 — 20 — — — — — — — — — — 10 200 V V V V mA — DYNAMIC Symbol Test Conditions Valu e Min. Typ. Max. Unit POUT ηc GP VSWR f = 900 MHz f = 900 MHz f = 900 MHz f = 900 MHz PIN = 12 W PIN = 12 W PIN = 12 W PIN = 12 W ICQ = 300 mA ICQ = 300 mA ICQ = 300 mA 60 45 7 3:1 — — — — — — — — W % dB — 2/5 SD1650 T YPICAL PERFORMANCE vs BROADBAND POWER INPUT OUTPUT POWER vs POWER INPUT vs FREQUENCY BROADBAND POWER OUTPUT vs FREQUENCY 90 100 850 MHz P O W E R 60 O U T P U T 30 W A T T S 10 20 W A T T S 50 40 50 70 80 P 900 MHz O W E R 90 960 MHz O U T P U T 80 70 PIN = 12 Watts ICQ = 300 mA 60 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 40 825 850 875 900 925 950 975 1000 POWER INPUT (WATTS) FREQUENCY (MHz) vs FREQUENCY BROADBAND POWER GAIN vs FREQUENCY vs FREQUENCY BROADBAND EFFICIENCY vs FREQUENCY 10 60 9.5 P O W E R 9 E F F I C 8.5 55 50 G A I N POUT = 60 Watts ICQ = 300 mA I E N C Y 45 POUT = 60 Watts ICQ = 300 mA 8 d B 7.5 40 % 35 7 825 850 875 900 925 950 975 1000 30 825 850 875 900 925 950 975 1000 FREQUENCY (MHz) FREQUENCY (MHz) 3/5 SD1650 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN FREQ. 850 MHz 870 MHz TYPICAL COLLECTOR LOAD IMPEDANCE ZCL 900 MHz 930 MHz 960 MHz ZIN (Ω) 2.4 + j 5.2 2.6 + j 5.4 3.2 + j 6.3 4.1 + j 6.0 4.7 + j 5.6 ZCL (Ω) 4.0 − j 1.3 3.9 − j 2.3 3.6 − j 2.6 3.4 − j 2.4 3.0 − j 3.0 T EST CIRCUIT C1,C2 C3 C4,C5 C6,C7 D1,D2 : : : : : 220 pF Chip Capacitor ATC Size B 10 Microfarad Electrolytic Capacitor 220 pF Chip Capacitor ATC Size B 1 - 4 pF Johanson Variable Capacitor 1N3064 Diode or Equiv L1,L2 : Q1 : R1 : R2 : Er =10.2 5 Turn 1/4” Dia. 16 AWG Coil SD1438-02 or Equiv. 5KΩ Potentiometer 100Ω 1/4 Watt Resistor H = .025in. 4/5 SD1650 P ACKAGE MECHANICAL DATA Ref. Dwg. No.: 12-0169 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 5/5