SD1727_04

SD1727 (THX15) RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY ■ OPTIMIZED FOR SSB ■ ■ ■ ■ ■ ■ Figure 1. Package 30 MHz 50 VOLTS IMD –30 dB COMMON EMITTER GOLD METALLIZATION POUT = 150 W PEP MIN. WITH 14 dB GAIN .500 4L FL (M164) epoxy sealed DESCRIPTION The SD1727 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. Figure 2. Pin Connection bs O let o Pr e du o (s) ct so Ob - te le ro P uc d s) t( 1. Collector 2. Emitter 3. Base 4. Emitter Table 1. Order Codes Order Codes Marking SD1727 Package M164 Packaging BLACK CARDBOARDS SD1727 (THX15) REV. 2 June 2004 1/9 SD1727 (THX15) Table 2. Absolute Maximum Ratings (Tcase = 25°C) Symbol VCBO VCEO VEBO IC PDISS TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 110 55 4.0 10 233 +200 – 65 to +150 Unit V V V A W °C °C Table 3. Thermal Data Symbol RTH(j-c) Parameter Junction-Case Thermal Resistance Value 0.75 Unit ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Table 4. Static Symbol BVCBO BVCES BVCEO BVEBO ICEO ICES hFE Test Conditions IC = 100 mA; IE = 0 mA IC = 100 mA; VBE = 0 V IC = 100 mA; IB = 0 mA IE = 10 mA; IC = 0 mA VCE = 30 V; IE = 0 mA VCE = 60 V; IE = 0 mA VCE = 6 V; IC = 1.4 A Table 5. Dynamic Symbol O bs POUT let o ro P e du ct (s) Ob - so te le Min. 110 110 55 4.0 — — 18 ro P Value Typ. — — — — — — — uc d Max. — — — — 5 5 43.5 s) t( V V V V mA mA — °C/W Unit Test Conditions Value Min. 150 14 — 37 — Typ. — — — — — Max. — — –30 — 220 Unit W dB dBc % pF f = 30 MHz; VCE = 50 V; ICQ = 100 mA POUT = 150 W PEP; VCE = 50 V; ICQ = 100 mA POUT = 150 W PEP; VCE = 50 V; ICQ = 100 mA POUT = 150 W PEP; VCE = 50 V; ICQ = 100 mA f = 1 MHz; VCB = 50 V GP (1) IMD (1) ηc(1) COB Note: The SD1727 is also usable in Class A at 40 V. Typical performance is: POUT = 30 W PEP, GP = 14 dB, IMD = – 40dBc Note: 1. f1 = 30.00 MHz; f2 = 30.001 MHz 2/9 SD1727 (THX15) TYPICAL PERFORMANCE Figure 3. Intermodulation Distortion vs Power Output PEP Figure 4. Power Output PEP vs Power Input Figure 5. Collector Efficiency vs Power Output PEP Figure 6. Power Gain vs Frequency Figure 7. Power Gain vs Power Output PEP bs O let o Pr e du o (s) ct so Ob - te le ro P uc d s) t( Figure 8. Safe Operating Area 3/9 SD1727 (THX15) IMPEDANCE DATA Figure 9. Typical Input Impedance bs O let o Pr e du o (s) ct so Ob - te le ro P uc d s) t( 4/9 SD1727 (THX15) BIAS CIRCUIT Figure 10. Bias Circuit TEST CIRCUIT - CLASS AB – 30 MHZ Figure 11. Test Circuit - Class AB – 30 Mhz bs O let o Pr e du o (s) ct so Ob - te le ro P uc d s) t( 5/9 SD1727 (THX15) Table 6. Test Circuit - Class AB – 30 Mhz C1 C2 C3 C4 C5, C6 C7 C8. C12 C9, C11, C15 C10 C13 C14 L1 L2 L3 L4 L5 L6, L7, L8 R Arco 427 Arco 4611 Arco 4615 220pF Arco 4215 Arco 426 100nF 63V 1nF 470µF 40V 220µF 63V 10nF 5 Turns Diameter 8mm, 1.3mm Wire, Length 15mm Hair Pin Copper Foil 20 x 5mm, 0.2mm Thick 1 Turn Diameter 10mm, 1.3mm Wire, Length 8mm 6 Turns Diameter 8mm, 1.3mm Wire, Length 25mm 4 Turns Diameter 12mm, 2mm Wire, Length 25mm Choke 0.6Ω MOUNTING CIRCUIT - CLASS AB – 30 MHZ Figure 12. Mounting Circuit - Class AB – 30 Mhz bs O let o Pr e du o (s) ct so Ob - te le ro P uc d s) t( 6/9 SD1727 (THX15) PACKAGE MECHANICAL Table 7. M164 Mechanical Data Symbol A B C D E F G H 4.70 12.62 13.84 12.57 0.08 millimeters Min 5.59 Typ Max 5.84 26.67 14.10 12.83 0.18 21.08 5.03 13.46 0.185 0.497 0.545 0.495 0.003 Min 0.220 inches Typ Max 0.230 1.050 0.555 0.505 0.007 0.830 0.198 0.530 Figure 13. M164 Package Dimensions bs O let o Pr e du o (s) ct so Ob - te le ro P uc d s) t( Note: Drawing is not to scale. 7/9 SD1727 (THX15) REVISION HISTORY Table 8. Revision History Date November-1992 8-June-2004 Revision 1 2 First Issue Stylesheet update. No content change. Description of Changes bs O let o Pr e du o (s) ct so Ob - te le ro P uc d s) t( 8/9 SD1727 (THX15) bs O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. 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