SD1729

SD1729 (TH416) RF & MICROWAVE TRANSISTORS H F SSB APPLICATIONS . . . . . . . OPTIMIZED FOR SSB 30 MHz 28 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION P OUT = 130 W PEP WITH 12 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1729 BRANDING TH416 PIN CONNECTION DESCRIPTION The SD1729 is a Class AB 28 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base 4. Emitter VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 70 35 4.0 12 175 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistance 1.0 °C/W 1/4 SD1729 (TH416) E LECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCES BVCEO BVEBO ICES hFE IC = 50 mA IC = 100 mA IE = 20 mA VCE = 35 V VCE = 5 V VBE = 0 V IB = 0 mA IC = 0 mA IE = 0 mA IC = 7 A 70 35 4.0 — 18 — — — — — — — — 20 50 V V V mA — DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT GP IMD* ηc COB Note: * f1 f = 30 MHz POUT = 130 W PEP POUT = 130 W PEP POUT = 130 W PEP f = 1 MHz = 30.00 MHz, f2 VCE = 28 V VCE = 28 V VCE = 28 V VCE = 28 V VCB = 28 V ICQ = 150 mA ICQ = 150 mA ICQ = 150 mA ICQ = 150 mA 130 12 — 37 — — — — — 220 — — −30 — — W dB dBc % pF = 30. 001 MHz TYPICAL PERFORMANCE SAFE OPERATING AREA 2/4 SD1729 (TH416) TYPICAL PERFORMANCE (cont’d) INTERMODULATION DISTORTION vs POWER OUTPUT T EST CIRCUIT C1 C2 C3, C4 C5 C6 C7 C8 C9 C10, C11 : : : : : : : : : 20 - 120pF 50 - 300pF 3.9nF 100nF 2.2µF 2 x 180pF in Parallel 3 x 56pF and 33pF in Parallel 4 x 56pF and 68pF in Parallel 360pF L1 : L2 : L3, L5 : L4 : R1 R2 R3 88nF 22µH Choke Coil 80nF Ferroxcube Choke Coil : 0.55Ω : 27Ω : 4.7Ω 3/4 SD1729 (TH416) P ACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0174 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4