SD1731

SD1731 (TH562) R F & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT = 220 W PEP WITH 13 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CO DE SD1731 BRANDING TH562 PIN CONNECTION DESCRIPTION The SD1731 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Valu e Un it 1. Collector 2. Emitter 3. Base 4. Emitter VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation (Theatsink ≤ 25°C) Junction Temperature Storage Temperature 110 55 4.0 20 233 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) RTH(c-s) Junction-Case Thermal Resistance Case-Heatsink Thermal Resistance 0.55 0.2 °C/W °C/W 1/7 July 10, 1995 SD1731 (TH562) E LECTRICAL SPECIFICATIONS STATIC (Tcase = 25°C) Symbo l T est Co nditions Value Min . T yp. Max. Unit BVCBO BVCEO BVEBO ICEO ICES hFE IC = 200 mA IC = 200 mA IE = 20 mA VCE = 30 V VCE = 55 V VCE = 6 V IE = 0 mA IB = 0 mA IC = 0 mA IE = 0 mA IE = 0 mA IC = 10 A 110 55 4.0 — — 15 — — — — — — — — — 5 10 80 V V V mA mA — DYNAMIC (Theatsink = 25°C) Symbo l Test Cond ition s Valu e Min. T yp. Max. Un it POUT GP * IMD* ηc* COB f = 30 MHz POUT = 220 W PEP POUT = 220 W PEP POUT = 220 W PEP f = 1 MHz VCE = 50 V VCE = 50 V VCE = 50 V VCE = 50 V VCB = 50 V ICQ = 150 mA ICQ = 150 mA ICQ = 150 mA ICQ = 150 mA 220 13 — 40 — — — — — 330 — — −30 — — W dB dBc % pf July 10, 1995 2/7 SD1731 (TH562) TYPICAL PERFORMANCE POWER OUTPUT PEP vs POWER INPUT COLLECTOR EFFICIENCY vs POWER OUTPUT PEP INTERMODULATION DISTORTION vs POWER OUTPUT PEP July 10, 1995 3/7 SD1731 (TH562) TYPICAL PERFORMANCE POWER GAIN vs POWER OUTPUT PEP COLLECTOR BASE CAPACITANCE vs COLLECTOR EMITTER VOLTAGE July 10, 1995 4/7 SD1731 (TH562) TEST CIRCUIT C1 C2 C3 : Arco 426 + 220pF + 330pF Chips : 2 x 10nF Chips : Arco 4615 + 2.2nF + 2 x 1nF LCC + 4.7nF + 560pf Chps C4 : Arco 4213 + 330pF Chip C5 : 10nF Chip C6 : 3 x 10nF Chips C7, C8, C9, C10, C11 : 1nF + 10nF + 100nF + 4.7µF, 63V + 100µF, 63V L1 L2, L3 L4 L5 : 10 Turns of 1.2mm Enameled Wire, Diameter 8.1mm, Length 20mm : 7 Turns of 1.2mm Enameled Wire on Ferrite Core Phillips 4C6 97180 : 6:3.5 Impedance Transformer on toriod Phillips 4C6 97180 : Twisted Pair 4:1 Transformer, 4 Turns Made with 1.0mm Enameled on toriod Phillips 4C6 97180 : Feedback Transformer Primary: 2 Turns of 1mm Enameled Wire Secondary: 8 Turns of 1mm Enameled Wire : Twisted Pair 4:1 Transformer, 4 Turns of bifilar Twisted 1.2mm Wires on Ferrite Core Phillips 4C6 97200 T1 T2 T3 : 3 Turns of 1.2mm Unenameled Wire Diameter, 7.1mm, Length 13mm : 8 Turns of 0.55mm Enameled Wire on Ferrite Core T4 Phillips 4C6 97170 (9 x 6 x 3) July 10, 1995 5/7 SD1731 (TH562) MOUNTING CIRCUIT BIAS CIRCUIT July 10, 1995 6/7 SD1731 (TH562) P ACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0174 rev. A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. ©1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. July 10, 1995 7/7