SD2900

® SD2900 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs s s s s s s s s GOLD METALLIZATION COMMON SOURCE CONFIGURATION 2 - 500 MHz 5 WATTS 28 VOLTS 13.5 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY M113 epoxy sealed ORDER CODE BRANDING SD2900 SD2900 DESCRIPTION The SD2900 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 28 V DC large signal applications up to 500 MHz PIN CONNECTION 1. Drain 2. Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC) Symbol V (BR)DSS V DGR V GS ID P DI SS Tj T STG Parameter Drain Source Voltage Drain-Gate Voltage (R GS = 1M Ω) Gate-Source Voltage Drain Current Power Dissipation Max. O perating Junction Temperature Storage Temperature Value 65 65 ± 20 900 21.9 200 -65 to 150 3.Gate 4. Source Uni t V V V mA W o o C C THERMAL DATA R th (j-c) R th(c -s) Junction-Case T hermal Resistance Case-Heatsink T hermal Resistance ∗ 8.0 0.30 o o C/W C/W * Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent). November 1999 1/8 SD2900 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC Symb ol V (BR)DSS I DSS I GSS V GS(Q) V DS( ON) g FS C ISS C OSS C RSS V GS = 0V V GS = 0V V GS = 20V V DS = 10V V GS = 10V V DS = 10V V GS = 0V V GS = 0V V GS = 0V Parameter I DS = 5 mA V DS = 28 V V DS = 0 V I D = 10 mA ID = 0.5 A I D = 0.5 A V DS = 28 V V DS = 28 V V DS = 28 V f = 1 MHz f = 1 MHz f = 1 MHz 0.2 8.5 7.8 1.4 1.0 Min. 65 0.5 1.0 6.0 1.6 Typ . Max. Un it V mA µA V V mho pF pF pF REF. 1021307I DYNAMIC Symb ol P OUT G PS ηD f = 400 MHz f = 400 MHz f = 400 MHz Parameter V DD = 28 V V DD = 28 V V DD = 28 V V DD = 28 V P out = 5 W P out = 5 W P out = 5 W IDQ = 50 mA I DQ = 50 mA I DQ = 50 mA I DQ = 50 mA Min. 5 13.5 45 30:1 16 50 Typ . Max. Un it W dB % VSW R Load f = 400 MHz Mismatch All Angles IMPEDANCE DATA FREQ . 400 MHz Z IN ( Ω ) 8.6 - j 24.6 Z DL ( Ω) 22.6 + j 27.0 2/8 SD2900 TYPICAL PERFORMANCE Capacitance vs Drain-Source Voltage GC83130 Maximum Thermal Resistance vs Case Temperature 10 GC83 14 0 100 C, CAPACITANCES (pF) f = 1 MHz 9.5 RTH(j-c)(ºC/W) 9 Ciss 10 Coss 8.5 8 Crss 7.5 1 0 10 20 30 25 45 65 85 VDS. DRAIN-SOURCE VOLTAGE (VOLTS) Tc, CASE TEMPERATURE (ºC) Drain Current vs Gate Voltage Gate-Source Voltages vs Case Temperature GC83 15 0 100 0 VGS, GATE-SOURCE VOLTAGE (NORMALIZED) GC83 160 1 .04 ID = 7 50 mA ID, DRAIN CURRENT (mA) T = -20 °C 800 VDS = 10V T = 25 °C 1 .02 ID = 5 00 mA 600 T = 80 °C 1 I D = 2 00 m A 400 0 .98 I D = 1 00 m A 200 0 .96 V DD = 1 0 V ID = 5 0 mA 0 5 6 7 8 9 10 0 .94 -25 0 25 50 75 1 00 Tc, CASE TEMPERATURE (ºC) VGS, GATE-SOURCE VOLTAGE (VOLTS) 3/8 SD2900 TYPICAL PERFORMANCE Output Power vs Input Power GC8 31 80 Output Power vs Input Power GC8 31 70 8 10 Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W) Vdd = 28 V 8 6 Tc= 2 5° C f = 40 0 MHz IDQ = 50 mA IDQ = 50 mA VDD = 28 V f = 400 MHz T = 25º C T = -20ºC 6 T = 80ºC 4 4 Vdd = 13 .5 V 2 2 0 10 50 90 13 0 17 0 210 250 0 0.01 0 .06 0.10 0.15 0 .19 0.24 Pin, INPUT POWER (mW) Pin, INPUT POWER (W) Output Power vs Voltage Supply GC8 31 90 Output Power vs Gate Voltage GC832 00 8 6 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (W) Pi n =0 .24 W T = -20 ° C T = 25 ° C 6 IDQ = 50 mA f = 40 0 MHz Pi n = 0.12 W 4 VDD = 28 V IDQ = 50 mA f = 400 MHz Pi n = Co ns tant T = 80 ° C 4 Pin =0 .06 W 2 2 0 13 18 23 28 0 1.5 3 4.5 6 VDD, SUP PLYVOLTAGE (VOLTS) VGS, GATE-SOURCE VOLTAGE (VOLTS) Power Gain vs Output Power GC83210 Efficiency vs Output Power GC83 2 20 18 70 60 PG, POWER GAIN (dB) EFFICIENCY (%) 17 50 16 Tc= 25°C f = 400 MHz IDQ = 50 m A 40 Tc= 2 5 °C f = 40 0 MHz IDQ = 5 0 mA 30 15 20 14 0 1 2 3 4 5 6 7 8 10 0 2 4 6 8 Pout, OUTPUT POWER(W) Pout, OUTPUT POWER (W) 4/8 SD2900 400 MHz Test Circuit Schematic 400 MHz Test Circuit Component Part List 5/8 SD2900 400 MHz Test Circuit Photomaster REF. 1021498C Production Test Fixture 6/8 SD2900 M113 (.380 DIA 4/L N/HERM W/FLG) MECHANICAL DATA mm MIN. A B C D E F G H I J K 6.22 3.05 5.59 19.81 18.29 24.64 9.40 0.10 2.16 4.06 TYP. MAX. 5.84 20.83 18.54 24.89 9.78 0.15 2.67 4.57 7.14 6.48 3.30 0.245 0.120 MIN. 0.220 0.780 0.720 0.970 0.370 0.004 0.085 0.160 inch TYP. MAX. 0.230 0.820 0.730 0.980 0.385 0.006 0.105 0.180 0.281 0.255 0.130 DIM. Controlling Dimension: Inches 1010936D 7/8 SD2900 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . 8/8