SD2904

® SD2904 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs s s s s s s s s GOLD METALLIZATION COMMON SOURCE CONFIGURATION 2 - 500 MHz 30 WATTS 28 VOLTS 9.5 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY M113 epoxy sealed ORDER CODE BRANDING SD2904 SD2904 DESCRIPTION The SD2904 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 28 V DC large signal applications up to 500 MHz PIN CONNECTION 1. Drain 2. Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC) Symbol V (BR)DSS V DGR V GS ID P DI SS Tj T STG Parameter Drain Source Voltage Drain-Gate Voltage (R GS =1M Ω) Gate-Source Voltage Drain Current Power Dissipation Max. O perating Junction Temperature Storage Temperature Value 65 65 ± 20 5 100 200 -65 to 150 3.Gate 4. Source Uni t V V V A W o o C C THERMAL DATA R th (j-c) R th(c -s) Junction-Case T hermal Resistance Case-Heatsink T hermal Resistance ∗ 1.75 0.30 o o C/W C/W * Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent). November 1999 1/8 SD2904 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC Symb ol V (BR)DSS I DSS I GSS V GS(Q) V DS( ON) g FS C ISS C OSS C RSS V GS = 0V V GS = 0V V GS = 20V V DS = 10V V GS = 10V V DS = 10V V GS = 0V V GS = 0V V GS = 0V Parameter I DS = 30 mA V DS = 28 V V DS = 0 V I D = 60 mA ID = 3 A ID = 3 A V DS = 28 V V DS = 28 V V DS = 28 V f = 1 MHz f = 1 MHz f = 1 MHz 1.2 47 35 7 1.0 Min. 65 3 2 6.0 1.6 Typ . Max. Un it V mA µA V V mho pF pF pF REF. 1021310H DYNAMIC Symb ol P OUT G PS ηD f = 400 MHz f = 400 MHz f = 400 MHz Parameter V DD = 28 V V DD = 28 V V DD = 28 V V DD = 28 V P out = 30 W P out = 30 W P out = 30 W IDQ = 50 mA I DQ = 50 mA I DQ = 50 mA I DQ = 50 mA Min. 30 9.5 45 10:1 11.5 55 Typ . Max. Un it W dB % VSW R Load f = 400 MHz Mismatch All Angles IMPEDANCE DATA FREQ . 400 MHz Z IN ( Ω ) 2.0 - j 2.4 Z DL ( Ω) 5.6 + j 0.4 2/8 SD2904 TYPICAL PERFORMANCE Capacitance vs Drain-Source Voltage GC8 2 480 Maximum Thermal Resistance vs Case Temperature 2. 1 GC8 2 49 0 1000 f = 1 MHz C, CAPACITANCES(pF) 100 Ciss RTH(j-c) (ºC/W) Coss Crss 10 1. 9 1. 7 1 0 10 20 30 25 40 55 70 85 VDS. DRAIN-SOURCEVOLTAGE (VOLTS) Tc, CASE TEMPERATURE (ºC) Drain Current vs Gate Voltage GC82 500 Gate-Source Voltages vs Case Temperature 5 T = -20 °C VGS, GATE-SOURCE VOLTAGE (NORMALIZED) GC82510 1.03 ID, DRAIN CURRENT(A) 4 T = 25 °C ID = 750mA ID = 500mA ID = 1 A ID= 1.25A 3 T = 80 °C 0.99 2 ID = 200mA 1 VDS = 10V VDD= 10V ID = 25 mA 0 5 6 7 8 9 10 0.95 -25 0 25 50 75 100 VGS, GATE-SOURCE VOLTAGE (VOLTS) Tc, CASE TEMPERAT URE (ºC) 3/8 SD2904 TYPICAL PERFORMANCE Output Power vs Input Power GC82 52 0 Output Power vs Input Power GC8 253 0 T = -20ºC 40 50 Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W) Vd d = 2 8 V 30 Tc= 2 5 °C f = 40 0 MHz IDQ = 5 0 mA 40 IDQ = 50 mA VDD = 28 V f = 400 MHz T = 25º C 30 20 Vdd = 1 3.5 V T = 80ºC 20 10 10 0 0 0 1 2 Pin, INPUT POWER (W) 3 4 0 1 2 3 4 Pin, INPUT POWER (W) Output Power vs Voltage Supply GC82 54 0 Output Power vs Gate Voltage 50 GC825 50 Pout, OUTPUT POWER (WATTS) 40 40 Pout, OUTPUT POWER (W) Pin = 4.8 W T = -20 ° C 30 Pin = 2.4 W 30 VDD = 28 V IDQ = 50 mA f = 400 MHz Pi n = Co ns tant T = 25 ° C 20 T = 80 ° C 20 Pin = 1.2 W 10 10 IDQ = 5 0 mA f = 40 0 MHz 0 0 -6 -4 -2 0 2 4 6 13 18 23 VDD, SUPPLY VOLTAGE (VOLTS) 28 VGS, GATE-SOURCE VOLTAGE (VOLTS) Power Gain vs Output Power GC8 25 60 Efficiency vs Output Power GC825 7 0 14 80 PG, POWER GAIN (dB) 13 f = 40 0 MHz VDD = 28 V IDQ = 50 mA EFFICIENCY (%) 60 12 40 f = 400 MHz VDD = 28 V IDQ = 50 mA 11 20 10 1 6 11 16 21 26 31 36 41 0 1 6 11 16 21 26 31 36 41 Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W) 4/8 SD2904 400 MHz Test Circuit Schematic 400 MHz Test Circuit Component Part List 5/8 SD2904 400MHz Test Circuit Photomaster REF. 1022015B Production Test Fixture 6/8 SD2904 M113 (.380 DIA 4/L N/HERM W/FLG) MECHANICAL DATA mm MIN. A B C D E F G H I J K 6.22 3.05 5.59 19.81 18.29 24.64 9.40 0.10 2.16 4.06 TYP. MAX. 5.84 20.83 18.54 24.89 9.78 0.15 2.67 4.57 7.14 6.48 3.30 0.245 0.120 MIN. 0.220 0.780 0.720 0.970 0.370 0.004 0.085 0.160 inch TYP. MAX. 0.230 0.820 0.730 0.980 0.385 0.006 0.105 0.180 0.281 0.255 0.130 DIM. Controlling Dimension: Inches 1010936D 7/8 SD2904 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . 8/8