SD2918

® SD2918 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs ADVANCE DATA s s s s GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION Pout = 30 W MIN. WITH 18 dB GAIN @ 30 MHz DESCRIPTION The SD2918 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 50 V DC large signal applications up to 200 MHz M113 epoxy sealed ORDER CODE BRANDING SD2918 TSD2918 PIN CONNECTION 1. Drain 2. Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC) Symbol V (BR)DSS V DGR V GS ID P DI SS Tj T STG Parameter Drain Source Voltage Drain-Gate Voltage (R GS = 1 MΩ ) Gate-Source Voltage Drain Current Power Dissipation Max. O perating Junction Temperature Storage T emperature Value 125 125 ± 20 6 175 200 -65 to 150 3.Gate 4. Source Uni t V V V A W o o C C THERMAL DATA R th (j-c) R th(c -s) Junction-Case Thermal Resistance Case-Heatsink T hermal Resistance ∗ 1.0 0.30 o o C/W C/W * Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent). November 1999 1/8 SD2918 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC Symb ol V (BR)DSS I DSS I GSS V GS(Q) V DS( ON) g FS C ISS C OSS C RSS V GS = 0V V GS = 0V V GS = 20V V DS = 10V V GS = 10V V DS = 10V V GS = 0V V GS = 0V V GS = 0V Parameter IDS = 10 mA VDS = 50 V V DS = 0 V ID = 10 mA ID = 2.5 A ID = 2.5 A V DS = 50 V V DS = 50 V V DS = 50 V f = 1 MHz f = 1 MHz f = 1 MHz 0.8 58 35.5 7.5 1.0 Min. 125 1.0 1 5.0 5.0 Typ . Max. Un it V mA µA V V mho pF pF pF REF. 1022497C DYNAMIC Symb ol P OUT G PS ηD f = 30MHz f = 30MHz f = 30MHz V DD = 50V V DD = 50V V DD = 50V V DD = 50V Parameter P in = 0.475 W P out = 30 W P out = 30 W P out = 30 W IDQ = 100 mA IDQ = 100 mA IDQ = 100 mA IDQ = 100 mA Min. 30 18 50 30:1 22 55 Typ . Max. Un it W dB % VSW R Load f = 30MHz Mismatch All Angles IMPEDANCE DATA FREQ . 30 MHz Z IN ( Ω ) 24.4 - j 13.4 Z DL ( Ω) 28.8 + j 7.2 2/8 SD2918 TYPICAL PERFORMANCE Capacitance vs Drain-Source Voltage Maximum Thermal Resistance vs Case Temperature Drain Current vs Gate Voltage Gate-Source Voltages vs Case Temperature 3/8 SD2918 TYPICAL PERFORMANCE Output Power vs Input Power Output Power vs Input Power Output Power vs Voltage Supply Output Power vs Gate Voltage Power Gain & Efficiency vs Output Power 4/8 SD2918 30 MHz Test Circuit Schematic VB + +50V + RF INPUT RF OUTPUT REF. 7143542A 30 MHz Test Circuit Component Part List 5/8 SD2918 30 MHz Test Circuit Photomaster REF. 7143542A 30 MHz Production Test Fixture 6/8 SD2918 M113 (.380 DIA 4/L N/HERM W/FLG) MECHANICAL DATA mm MIN. A B C D E F G H I J K 6.22 3.05 5.59 19.81 18.29 24.64 9.40 0.10 2.16 4.06 TYP. MAX. 5.84 20.83 18.54 24.89 9.78 0.15 2.67 4.57 7.14 6.48 3.30 0.245 0.120 MIN. 0.220 0.780 0.720 0.970 0.370 0.004 0.085 0.160 inch TYP. MAX. 0.230 0.820 0.730 0.980 0.385 0.006 0.105 0.180 0.281 0.255 0.130 DIM. Controlling Dimension: Inches 1010936D 7/8 SD2918 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . 8/8