SD2931-10W

SD2931-10 RF power transistor: HF/VHF/UHF N-channel power MOSFETs Datasheet - production data • POUT = 150 W min. with 14 dB gain @ 175 MHz • Thermally enhanced packaging for lower junction temperatures Description The SD2931-10 is a gold metalized N-channel MOS field-effect RF power transistor. Being electrically identical to the standard SD2931 MOSFET, it is intended for use in 50 V dc large signal applications up to 230 MHz. M174 Epoxy sealed The SD2931-10 is mechanical compatible to the SD2931 but offers in addition a better thermal capability (25% lower thermal resistance), representing the best-in-class transistors for ISM applications, where reliability and ruggedness are critical factors. Figure 1. Pin connection 4 1 3 2 1. Drain 3. Gate 2. Source 4. Source Features • Gold metalization • Excellent thermal stability • Common source configuration Table 1. Device summary Order code Marking Base qty. Package Packaging(1) SD2931-10W SD2931-10 25 pcs M174 Plastic tray 1. For more details please refer to Chapter 11: Marking, packing and shipping specifications. July 2016 This is information on a product in full production. DocID7076 Rev 10 1/19 www.st.com Contents SD2931-10 Contents 1 2 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Transient thermal impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 Impedance data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 6 Typical performance @ 175 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 7 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 8 Typical performance @ 30 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 9 Test circuit @ 30 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 10 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 11 Marking, packing and shipping specifications . . . . . . . . . . . . . . . . . . . 17 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/19 DocID7076 Rev 10 SD2931-10 Electrical data 1 Electrical data 1.1 Maximum ratings (TCASE = 25 °C). Table 2. Absolute maximum ratings Symbol V(BR)DSS(1) VDGR VGS ID PDISS TJ TSTG Parameter Value Unit Drain source voltage 125 V Drain-gate voltage (RGS = 1 MΩ) 125 V Gate-source voltage ±40 V Drain current 20 A Power dissipation 389 W Max. operating junction temperature 200 °C -65 to +150 °C Value Unit 0.45 °C/W Storage temperature 1. TJ = 150°C 1.2 Thermal data Table 3. Thermal data Symbol RthJC Parameter Junction - case thermal resistance DocID7076 Rev 10 3/19 19 Electrical characteristics 2 SD2931-10 Electrical characteristics (TCASE = 25 °C). 2.1 Static Table 4. Static (per side) Symbol Test conditions Min 125 Typ Max Unit V(BR)DSS VGS = 0 IDS = 100 mA IDSS VGS = 0 VDS = 50 V 50 μA VGS = 20 VDS = 0 250 nA IGSS VGS(Q) (1) VDS = 10 V ID = 250 mA VDS(ON) VGS = 10 V ID = 10 A GFS VDS = 10 V ID = 5 A CISS VGS = 0 VDS = 50 V COSS VGS = 0 CRSS VGS = 0 V See table below 3.0 5 V V 6 mho f = 1 MHz 480 pF VDS = 50 V f = 1 MHz 190 pF VDS = 50 V f = 1 MHz 18 pF 1. VGS(Q) sorted with alpha/numeric code marked on unit. 2.2 Dynamic Table 5. Dynamic Symbol Test conditions IDQ = 250 mA Min Max Unit POUT VDD = 50 V f = 175 MHz 150 GPS VDD = 50 V IDQ = 250 mA POUT = 150 W f = 175 MHz 14 15 dB nD VDD = 50 V IDQ = 250 mA POUT = 150 W f = 175 MHz 55 65 % VDD = 50 V IDQ = 250 mA POUT = 150 W f = 175 MHz Load mismatch All phase angles 4/19 Typ DocID7076 Rev 10 10:1 W VSWR SD2931-10 Electrical characteristics Table 6. VGS sorts Symbol Value Symbol Value A 2.0 - 2.1 K 2.9 - 3.0 B 2.1 - 2.2 L 3.0 - 3.1 C 2.2 - 2.3 M 3.1 - 3.2 D 2.3 - 2.4 N 3.2 - 3.3 E 2.4 - 2.5 P 3.3 - 3.4 F 2.5 - 2.6 Q 3.4 - 3.5 G 2.6 - 2.7 R 3.5 - 3.6 H 2.7 - 2.8 S 3.6 - 3.7 J 2.8 - 2.9 DocID7076 Rev 10 5/19 19 Transient thermal impedance 3 SD2931-10 Transient thermal impedance Figure 2. Transient thermal impedance 6LQJOHUHSHWLWLYHSXOVH 7KHUPDOLPSHGDQFH =7+-  &ƒ&:  VLQJOHSXOVH                    ( ( ( ( ( 5HFWDQJXODUSRZHUSXOVHZLGWKVHF 6/19 DocID7076 Rev 10 ( $09 SD2931-10 Transient thermal impedance Figure 3. Transient thermal impedance model 'LVVLSDWHG3RZHUB:DWWV 5 5 2KP & & &  ) 5 5 5 2KP & & &  ) 5 5 5 2KP & & &  ) 5 5 5 2KP & & &  ) $09 DocID7076 Rev 10 7/19 19 Impedance data 4 SD2931-10 Impedance data Figure 4. Impedance data D ZDL Typical Input Impedance Typical Drain Load Impedance G Zin S Table 7. Impedance data 8/19 Freq ZIN (Ω) ZDL (Ω) 30 MHz 1.7 - j 5.7 6.8 + j 0.9 175 MHz 1.2 - j 2.0 2.0 + j 2.4 DocID7076 Rev 10 SD2931-10 5 Typical performance Typical performance Figure 5. Capacitance vs drain-source voltage Figure 6. Drain current vs gate voltage 10000 20 ID, DRAIN CURRENT (A) C, CAPACITANCE (pF) Tc=-20 °C f =1MHz 1000 Ciss Coss 100 Tc=+25 °C 15 10 Tc=+80 °C VDS = 10 V 5 Crss 0 10 0 10 20 30 40 2 50 2.5 3 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 7. Gate-source voltage vs case temperature 4 4.5 5 5.5 6 Figure 8. Maximum thermal resistance vs case temperature 1.12 0.6 Id =9A 1.08 Id =10A Id =7A Id =5A 1.04 Id =11A 1 0.96 Id =4A Id =2A 0.92 Id =1A 0.88 RTH(j-c) (°C/W) VGS, GATE-SOURCE VOLTAGE (NORMALIZED) 3.5 VGS, GATE-SOURCE VOLTAGE (V) 0.56 0.52 0.48 Id =.25A Vds= 10 V 0.84 Id =.1A 0.44 25 0.8 -25 0 25 50 75 100 35 45 55 65 75 85 Tc, CASE TEMPERATURE (°C) Tc, CASE TEMPERATURE (°C) Figure 9. Safe operating area Ids(A) 100 10 (1) 1 1 10 100 1000 Vds(V) (1) Current in this area may be limited by Rds(on) DocID7076 Rev 10 9/19 19 Typical performance @ 175 MHz 6 SD2931-10 Typical performance @ 175 MHz Figure 10. Output power vs input power Figure 11. Output power vs input power 270 240 Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W) 270 Vdd= 50V 210 180 Vdd= 40V 150 120 90 60 f= 175MHz Idq= 250mA 30 0 0 5 10 15 20 180 Tc =+80 °C 150 120 90 Vdd= 50V Idq= 250mA f= 175MHz 60 30 0 25 0 5 10 16 70 Nd, EFFICIENCY (%) 80 14 12 10 Vdd=50V Idq=250mA f=175Mhz 25 60 50 40 Vdd=50V Idq=250mA f=175Mhz 30 6 20 0 50 100 150 200 250 0 50 100 Pout, OUTPUT POWER (W) 150 200 250 Pout, OUTPUT POWER (W) Figure 14. Output power vs supply voltage Figure 15. Drain current vs gate-source voltage 270 20 Pin =10W 240 Tc=-20 °C ID, DRAIN CURRENT (A) Pout,OUTPUT POWER(W) 20 Figure 13. Efficiency vs output power 18 210 Pin =5W 180 150 Pin =2.5W 120 90 60 Tc=+25 °C 15 10 Tc=+80 °C 5 Idq= 250mA f= 175MHz 30 0 0 24 28 32 36 40 44 48 52 2 2.5 3 3.5 4 4.5 5 VGS, GATE-SOURCE VOLTAGE (V) Vdd,DRAIN VOLTAGE(V) 10/19 15 Pin, INPUT POWER(W) Figure 12. Power gain vs output power Gp, POWER GAIN (dB) Tc =+25 °C 210 Pin, INPUT POWER (W) 8 Tc =-20 °C 240 DocID7076 Rev 10 5.5 6 SD2931-10 7 Test circuit Test circuit Figure 16. 175 MHz schematic (production test circuit) Note: All dimensions in inches REF. 1021579C Table 8. Component part list Component Description T1 4:1 transformer, 25 ohm flexible coax .090 OD 6” long T2 1:4 transformer, 25 ohm semi-rigid coax .141 OD 6” long FB1 Toroid X 2, 0.5” OD .312” ID 850μ 2 turns FB2, FB3 VK200 FB4 Shield bead, 1” OD 0.5” ID 850μ 3 turns L1 1/4 wave choke, 50 ohm semi-rigid coax .141 OD 12” Long PCB 0.62” woven fiberglass, 1 oz. copper, 2 sides, εr = 2.55 R1, R3 470 ohm 1 W chip resistor R2 360 ohm 1/2 W resistor R4 20 Kohm 10 turn potentiometer R5 560 ohm 1 W resistor C1, C11 470 pF ATC chip cap C2 43 pF ATC chip cap C3, C8, C9 Arco 404, 12-65 pF C4 Arco 423, 16-100 pF DocID7076 Rev 10 11/19 19 Test circuit SD2931-10 Table 8. Component part list (continued) Component Description C5 120 pF ATC chip cap C6 0.01 μF ATC chip cap C7 30 pF ATC chip cap C10 91 pF ATC chip cap C12, C15 1200 pF ATC chip cap C13, C14,C16, C17 0.01 μF / 500 V chip cap C18 10 μF 63 V electrolytic capacitor 4 inches Figure 17. 175 MHz test circuit photomaster 6.4 inches Figure 18. 175 MHz test circuit 12/19 DocID7076 Rev 10 SD2931-10 8 Typical performance @ 30 MHz Typical performance @ 30 MHz Figure 19. Output power vs input power Figure 20. Power gain vs output power Pout, OUTPUT POWER (W) 250 30 PG, POWER GAIN (dB) Vdd = 50 V 200 150 Vdd = 40 V 100 f = 30 MHz IDQ = 250 mA 50 0 0 0.1 0.2 0.3 0.4 29 28 27 f = 30 MHz VDD = 50 V IDQ = 250 mA 26 25 24 0.5 0 40 Pin, INPUT POWER (W) 80 120 160 200 Pout, OUTPUT POWER (W) Figure 21. Efficiency vs output power Figure 22. Output power vs supply voltage 70 200 Pin=.31 W 50 Pin=.22 W 150 Pout(W) Efficiency (%) 60 40 30 f = 30 MHz VDD = 50 V IDQ = 250 mA 20 10 100 Pin=.13 W 50 f = 30 MHz IDQ = 250 mA 0 0 40 80 120 160 200 0 24 Pout, OUTPUT POWER (W) 28 32 36 40 44 48 52 VDD(V) Pout, OUTPUT POWER (W) Figure 23. Output power vs gate voltage 200 T= +25 °C T= -20 °C 150 T= +80 °C 100 VDD = 50 V IDQ = 250 mA f = 30 MHz Pin = Constant 50 0 0 1 2 3 4 5 6 VGS GATE-SOURCE VOLTAGE (V) DocID7076 Rev 10 13/19 19 Test circuit @ 30 MHz 9 SD2931-10 Test circuit @ 30 MHz Figure 24. 30 MHz test circuit schematic (engineering test circuit) Figure 25. 30 MHz test circuit part list Symbol T1 9:1 transformer, 25 Ω flexible coax with extra shield .090 OD 15” long T2 1:4 transformer, 50 Ω flexible coax .225 OD 15” long FB1 Toroid 1.7” OD .30” ID 220 μ 4 turns FB2 Surface mount EMI shield bead FB3 Toroid 1.7” OD .300” ID 220μ 3 turns RFC1 Toroid 0.5” OD 0.30” ID 125μ 4 turns 12 awg wire PCB 0.62” woven fiberglass, 1 oz. Copper, 2 Sides, εr = 2.55 R1, R3 R2 14/19 Description 1 KΩ 1 W chip resistor 680 Ω 3 W wirewound resistor C1,C4,C6,C7,C8, C9, C11,C12,C13 0.1 μF ATC chip cap C2, C3 750 pF ATC chip cap C5 470 pF ATC chip cap C10 10 μF 63 V electrolytic capacitor C14 100 μF 63 V electrolytic capacitor DocID7076 Rev 10 SD2931-10 10 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Figure 26. M174 (0.500 DIA 4/L N/HERM W/FLG) package outline Controlling Dimension: Inches 1011000D DocID7076 Rev 10 15/19 19 Package information SD2931-10 Table 9. M174 (0.500 DIA 4/L N/HERM W/FLG) package mechanical data mm. Inch Dim. Min A 5.56 B Max Min 5.584 0.219 3.18 Typ Max 0.230 0.125 C 6.22 6.48 0.245 0.255 D 18.28 18.54 0.720 0.730 E 3.18 0.125 F 24.64 24.89 0.970 0.980 G 12.57 12.83 0.495 0.505 H 0.08 0.18 0.003 0.007 I 2.11 3.00 0.083 0.118 J 3.81 4.45 0.150 0.175 K 16/19 Typ 7.11 0.280 L 25.53 26.67 1.005 1.050 M 3.05 3.30 0.120 0.130 DocID7076 Rev 10 SD2931-10 11 Marking, packing and shipping specifications Marking, packing and shipping specifications Table 10. Packing and shipping specifications Order code Packaging Pcs per tray Dry pack humidity VGS Lot code SD2931-10W Plastic tray 25 < 10 % Not mixed Not mixed Figure 27. Marking drawing Table 11. Marking specifications Symbol Description W Wafer process code X VGS sort CZ Assembly plant xxx Last 3 digit of diffusion lot VY Diffusion plant MAR County of origin CZ Test and finishing plant y Assembly year yy Assembly week DocID7076 Rev 10 17/19 19 Revision history 12 SD2931-10 Revision history Table 12. Document revision history 18/19 Date Revision Changes 09-Sep-2004 4 17-Jun-2004 5 Updated Table 5: Dynamic on page 4 04-Mar-2008 6 Updated Table 4: Static (per side), Table 5: Dynamic and Table 6: VGS sorts on page 5 08-Feb-2011 7 Inserted Chapter 11: Marking, packing and shipping specifications. 12-Jan-2012 8 Inserted Chapter 3: Transient thermal impedance. 19-Dec-2012 9 Updated Table 10: Packing and shipping specifications 14-Jul-2016 10 Updated VGS value in Table 2: Absolute maximum ratings. DocID7076 Rev 10 SD2931-10 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2016 STMicroelectronics – All rights reserved DocID7076 Rev 10 19/19 19