SD2931-12MR

SD2931-12MR Datasheet 150 W – 50 V moisture resistant HF/VHF DMOS transistor Features M174MR epoxy sealed 1 4 1. Drain 2. Source • • • • Gold metallization Excellent thermal stability Common source push-pull configuration POUT = 150 W min. with 14 dB gain @ 175 MHz • • Thermally enhanced packing for lower junction temperatures GFS and VGS sort marked on unit • Moisture resistant package specifically designed to operate in extreme environments Description 3. Gate 4. Source 3 2 The SD2931-12MR is a gold metallized N-channel MOS field-effect RF power transistor. Electrically identical to the standard SD2931 MOSFET, it is used for 50 V DC large signal applications up to 230 MHz. The device is mechanically compatible with the SD2931 but offers better thermal capability (25% lower thermal resistance), representing the best-in-class in transistors for ISM applications, where reliability and ruggedness are critical factors. The SD2931-12MR benefits from the latest generation of environmentally designed packing, ruggedized against cyclic high moisture operation and severe storage conditions. Product status SD2931-12MR Product summary Order code SD2931-12MR Marking SD2931-11MR Package M174 Packing Plastic tray DS9247 - Rev 4 - February 2018 For further information contact your local STMicroelectronics sales office. www.st.com/ SD2931-12MR Electrical data 1 Electrical data 1.1 Maximum ratings TCASE = 25 °C Table 1. Absolute maximum ratings Symbol Parameter V(BR)DSS VDGR VGS ID PDISS TJ TSTG 1.2 Value Unit Drain source voltage 125 V Drain-gate voltage (RGS = 1 MΩ) 125 V Gate-source voltage ±40 V Drain current 20 A Power dissipation 389 W Max. operating junction temperature 200 °C -65 to +150 °C Value Unit 0.45 °C/W Storage temperature Thermal data Table 2. Thermal data Symbol RthJC DS9247 - Rev 4 Parameter Junction-to-case thermal resistance page 2/16 SD2931-12MR Electrical characteristics 2 Electrical characteristics TCASE = 25 °C Table 3. Static Symbol V(BR)DSS IDSS Test conditions VGS = 0 V Min. IDS = 100 mA Typ. Max. 125 Unit V VGS = 0 V VDS = 5 V 20 VGS = 0 V VDS = 50 V 50 µA IGSS VGS = 20 V VDS = 0 V 250 nA VGS(Q) (1) VDS = 10 V ID = 250 mA VDS(ON) VGS = 10 V I D = 10 A VDS = 10 V ID=5A CISS VGS = 0 V VDS = 50 V COSS VGS = 0 V CRSS VGS = 0 V GFS (1) See table below V 3.0 V See table below mho f = 1 MHz 480 pF VDS = 50 V f = 1 MHz 190 pF VDS = 50 V f = 1 MHz 18 pF 1. VGS(Q) and GFS sorted with alpha/numeric code marked on unit. Table 4. VGS and GFS sorts Code VGS GFS I 2.65 - 3.15 6.0 - 6.5 J 2.65 - 3.15 6.5 - 7.0 K 2.65 - 3.15 7.0 - 7.5 Table 5. Dynamic Symbol DS9247 - Rev 4 Test conditions Min. Max. Unit POUT VDD = 50 V IDQ = 250 mA GPS VDD = 50 V IDQ = 250 mA POUT = 150 W f = 175 MHz 14 15 dB ηD VDD = 50 V IDQ = 250 mA POUT = 150 W f = 175 MHz 55 65 % Load mismatch VDD = 50 V IDQ = 250 mA all phase angles f = 175 MHz Typ. POUT = 150 W f = 175 MHz 150 10:1 W VSWR page 3/16 SD2931-12MR Transient thermal impedance 3 Transient thermal impedance Figure 3. Transient thermal impedance Single - repetitive pulse Thermal impedance - ZTHJ - C (°C/W) 0.50 single pulse 0.45 10% 0.40 30% 20% 40% 0.35 50% 60% 0.30 70% 80% 0.25 90% 0.20 0.15 0.10 0.05 0.00 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 Rectangular power pulse width (s) DS9247 - Rev 4 1.E+01 AM09280V1 page 4/16 SD2931-12MR Transient thermal impedance Figure 4. Transient thermal impedance model Dissi pa ted P owe r_Wa tts R1 R=0.023 Ohm C C1 C=.0020978 F R R2 R=.072 Ohm C C2 C=.0021832 F R R3 R=.200 Ohm C C3 C=.0244758 F R R4 R=.155 Ohm C C4 C=.2057373 F AM09281V1 DS9247 - Rev 4 page 5/16 SD2931-12MR Typical performance 4 Typical performance Figure 5. Capacitance vs. drain voltage Figure 6. Drain current vs. gate voltage 1000 0 20 Tc=-20 °C f =1MHz Tc=+25 °C 15 100 0 Cis s 10 Tc=+80 °C Cos s VDS = 10 V 100 5 Crs s 0 10 0 10 20 30 40 2 50 2.5 3 3.5 4 4.5 5 5.5 6 VGS, GATE-SOURCE VOLTAGE (V) VDS, DRAIN-S OURC E VOLTAGE (V) Figure 7. Gate-source voltage vs. case temperature Figure 8. Maximum thermal resistance vs. case temperature 0.6 0.56 0.52 0.48 0.44 25 35 45 55 65 75 85 T , CASE TEMPERATURE (°C) C T , CASE TEMPERATURE (°C) C Figure 9. Safe operating area DS9247 - Rev 4 page 6/16 SD2931-12MR Typical performance (175 MHz) 4.1 Typical performance (175 MHz) Figure 10. Output power vs. input power Figure 11. Output power vs. input power at different Tc 270 270 240 Tc =-20 °C 240 Vdd= 50V 210 Tc =+25 °C 210 180 Vdd= 40V 180 150 150 120 120 90 90 60 Vdd= 50V Idq= 250mA f= 175MHz 60 f= 175MHz Idq= 250mA 30 Tc =+80 °C 30 0 0 0 5 10 15 20 0 25 5 10 15 20 25 P , INPUT POWER (W) P , INPUT POWER (W) Figure 12. Power gain vs. output power Figure 13. Efficiency vs. output power IN IN 18 80 16 70 14 60 12 50 40 10 Vdd=50V Idq=250mA f=175Mhz 8 Vdd=50V Idq=250mA f=175Mhz 30 20 6 0 50 10 0 P 15 0 20 0 0 25 0 50 10 0 , INPUT POWER (W) P OUT Figure 14. Output power vs. supply voltage OUT 15 0 20 0 25 0 , INPUT POWER (W) Figure 15. Drain current vs. gate-source voltage 20 27 0 P in =10W 24 0 Tc=-20 °C 21 0 Tc=+25 °C 15 P in =5W 18 0 15 0 10 P in =2.5W Tc=+80 °C 12 0 90 5 60 Idq= 250 mA f= 175MHz 30 0 0 24 28 32 36 40 VDD, DRAIN VOLTAGE (V) DS9247 - Rev 4 44 48 52 2 2.5 3 V GS 3.5 4 4.5 5 5.5 6 , GATE-SOURCE VOLTAGE (V) page 7/16 SD2931-12MR Typical performance (175 MHz) 4.1.1 Test circuit (175 MHz) Figure 16. 175 MHz test circuit schematic (production test circuit) VG +50V Table 6. 175 MHz test circuit part list DS9247 - Rev 4 Component Description T1 4:1 transformer, 25 Ω flexible coax .090 OD 6” long T2 1:4 transformer, 25 Ω semi-rigid coax .141 OD 6” long FB1 Toroid X 2, 0.5” OD .312” ID 850 µ 2 turns FB2, FB3 VK200 FB4 Shield bead, 1” OD 0.5” ID 850 µ 3 turns L1 1/4 wave choke, 50 Ω semi-rigid coax .141 OD 12” long PCB 0.62” woven fiberglass, 1 oz. copper, 2 sides, εr = 2.55 R1, R3 470 Ω 1 W chip resistor R2 360 Ω 1/2 W resistor R4 20 kΩ 10 turn potentiometer R5 560 Ω 1 W resistor C1, C11 470 pF ATC chip cap C2 43 pF ATC chip cap C3, C8, C9 Arco 404, 12-65 pF C4 Arco 423, 16-100 pF C5 120 pF ATC chip cap C6 0.01 µF ATC chip cap C7 30 pF ATC chip cap C10 91 pF ATC chip cap C12, C15 1200 pF ATC chip cap C13, C14,C16, C17 0.01 µF / 500 V chip cap C18 10 µF 63 V electrolytic capacitor page 8/16 SD2931-12MR Typical performance (175 MHz) 4 inches Figure 17. 175 MHz test circuit photomaster Figure 18. 175 MHz test circuit DS9247 - Rev 4 page 9/16 SD2931-12MR Typical performance (30 MHz) 4.2 Typical performance (30 MHz) Figure 19. Output power vs. input power Figure 20. Power gain vs. output power 25 0 30 Vdd = 50 V 20 0 29 28 Gp (dB) Pout (W) 15 0 Vdd = 4 0 V 27 10 0 26 50 25 f = 30 M H z ID Q = 2 50 m A 0 0 0 .1 0 .2 0 .3 0 .4 f = 30 M H z V D D = 50 V ID Q = 250 m A 24 0 .5 0 40 80 P in ( W ) 12 0 16 0 20 0 P ou t ( W ) Figure 21. Efficiency vs. output power Figure 22. Output power vs. supply voltage 70 200 60 P in = 0 .3 1 W 180 160 40 140 30 120 Pout (W) Nd (%) 50 20 40 80 120 160 P in = 0 .1 3 W 60 0 0 100 80 f = 30 MHz V D D = 50 V ID Q = 2 5 0 m A 10 P in = 0 .22 W 40 20 0 P o u t (W ) f = 30 MHz ID Q = 25 0 m A 20 0 24 28 32 36 40 44 48 52 Vd d (V ) Figure 23. Output power vs. gate-source voltage 18 0 T = + 25 ° C 16 0 T = -2 0 °C 14 0 Pout (W) 12 0 T = + 80 ° C 10 0 80 60 V D D = 50 V ID Q = 25 0 mA f = 30 M H z P in = C o n s tan t 40 20 0 0 1 2 3 4 5 6 VG S (V) DS9247 - Rev 4 page 10/16 SD2931-12MR Typical performance (30 MHz) 4.2.1 Test circuit (30 MHz) Figure 24. 30 MHz test circuit schematic (production test circuit) VG+ +50V Table 7. 30 MHz test circuit part list DS9247 - Rev 4 Component Description T1 9:1 transformer, 25 Ω flexible coax with extra shield .090 OD 15” long T2 1:4 transformer, 50 Ω flexible coax .225 OD 15” long FB1 Toroid 1.7” OD .30” ID 220 µ 4 turns FB2 Surface mount EMI shield bead FB3 Toroid 1.7” OD .300” ID 220 µ 3 turns RFC1 Toroid 0.5” OD 0.30” ID 125 µ 4 turns 12 awg wire PCB 0.62” woven fiberglass, 1 oz. copper, 2 sides, εr = 2.55 R1, R3 1 kohm 1 W chip resistor R2 680 ohm 3 W wirewound resistor C1, C4, C6, C7, C8, C9, C11, C12,C13 0.1 μF ATC chip cap C2, C3 750 pF ATC chip cap C5 470 pF ATC chip cap C10 10 μF 63 V electrolytic capacitor C14 100 μF 63 V electrolytic capacitor page 11/16 SD2931-12MR Marking, packing and shipping specifications 5 Marking, packing and shipping specifications Table 8. Packing and shipping specifications Order code Packing Pieces per tray Dry pack humidity VGS and GFS code Lot code SD2931-12MR Plastic tray 25 < 10% Not mixed Not mixed Figure 25. SD2931-12MR marking layout GFS code SD2931-11MR Table 9. Marking specifications Symbol X VGS and GFS sort CZ Assembly plant xxx Last 3 digits of diffusion lot VY Diffusion plant MAR CZ DS9247 - Rev 4 Description Country of origin Test and finishing plant y Assembly year yy Assembly week page 12/16 SD2931-12MR Package information 6 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 6.1 M174MR package information Figure 26. M174MR package outline .100/2.54 x45° 4xA 2xøM 2x C 2x B 4xH 4X SEATING PLANED PIN 5 (THERMAL BASE) 8410504 rev. A Table 10. M174 package mechanical data Dim. mm Min. A 5.56 B Max. 5.584 3.18 C 6.22 6.48 D 18.28 18.54 E 3.18 F 24.64 24.89 G 12.07 12.83 H 0.08 0.18 I 2.11 3.00 J 3.81 4.45 K DS9247 - Rev 4 Typ. 8.00 L 25.53 26.67 M 3.05 3.30 page 13/16 SD2931-12MR Revision history Table 11. Document revision history DS9247 - Rev 4 Date Revision 20-Feb-2013 1 10-Sep-2013 2 11-Nov-2016 3 07-Feb-2018 4 Changes Initial release Document promoted from preliminary data to full datasheet. Formatting and minor text changes. Updated Table 2: "Absolute maximum ratings". Updated marking in cover page and Figure 25. SD2931-12MR marking layout . Minor text changes. page 14/16 SD2931-12MR Contents Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1.2 Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 Transient thermal impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4.1 Typical performance (175 MHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4.1.1 4.2 Test circuit (175 MHz). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Typical performance (30 MHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.2.1 Test circuit (30 MHz). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Marking, packing and shipping specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 6 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 6.1 M174MR package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 DS9247 - Rev 4 page 15/16 SD2931-12MR IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS9247 - Rev 4 page 16/16