0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
SD2931

SD2931

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    M244

  • 描述:

    IC TRANS RF PWR HF/VHF/UHF M244

  • 详情介绍
  • 数据手册
  • 价格&库存
SD2931 数据手册
® SD2931 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs TARGET DATA s s s s GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 150W MIN. WITH 14 dB GAIN @175 MHz DESCRIPTION The SD2931 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2931 is intended for use in 50V dc large signal applications up to 230 MHz M174 epoxy sealed ORDER CODE BRANDING SD2931 TSD2931 PIN CONNECTION 1. Drain 2. Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC) Symbol V DGR V GS ID P DISS Tj T STG Parameter Drain-Gate Voltage (R GS = 1M Ω ) Gate-Source Voltage Drain Current Power Dissipation Max. Operating Junction Temperature Storage Temperature Value 125 125 ± 20 16 292 200 -65 to 150 3.Gate 4. Source Unit V V V A W o o V (BR)DSS Drain Source Voltage C C THERMAL DATA R th(j-c) R th(c-s) Junction-Case Thermal Resistance Case-Heatsink Thermal Resistance ∗ 0.6 0.2 o o C/W C/W * Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent). November 1999 1/4 SD2931 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC Symbol V (BR)DSS I DSS I GSS V GS(Q) V DS(ON) G FS C ISS C OSS C RSS V GS = 0V V GS = 0V V GS = 20V V DS = 1 0V V GS = 10V V DS = 1 0V V GS = 0V V GS = 0V V GS = 0V Parameter I DS = 1 00 mA V DS = 5 0 V V DS = 0 V I D = 2 50 mA ID = 10 A ID = 5 A V DS = 5 0 V V DS = 5 0 V V DS = 5 0 V f = 1 MHz f = 1 MHz f = 1 MHz 5 480 180 15 2 2.7 Min. 125 5 5 5 3 Typ. Max. Unit V mA µA V V mho pF pF pF DYNAMIC Symbol P OUT G PS ηD f = 175 MHz f = 175 MHz f = 175 MHz Parameter V DD = 5 0 V V DD = 5 0 V V DD = 5 0 V I DQ = 2 50 mA P out = 1 50 W P out = 1 50 W P out = 1 50 W I DQ = 2 50 mA I DQ = 2 50 mA I DQ = 2 50 mA Min. 150 14 55 10:1 15 65 Typ. Max. Unit W dB % VSWR Load f = 175 MHz V DD = 5 0 V Mismatch All Phase Angles IMPEDANCE DATA FREQ. 30 MHz 175 MHz Z IN (Ω ) 1.7 - j 5.7 1.2 - j 2.0 Z DL ( Ω ) 6.8 + j 0.9 2.0 + j 2.4 2/4 SD2931 M174 (.500 DIA 4L N/HERM W/FLG) MECHANICAL DATA mm MIN. A B C D E F G H I J K L M 25.53 3.05 24.64 12.57 0.08 2.11 3.81 6.22 18.28 3.18 24.89 12.83 0.18 3.00 4.45 7.11 26.67 3.30 1.005 0.120 0.970 0.495 0.003 0.083 0.150 5.56 3.18 6.48 18.54 0.245 0.720 0.125 0.980 0.505 0.007 0.118 0.175 0.280 1.050 0.130 TYP. MAX. 5.84 MIN. 0.219 0.125 0.255 0.730 inch TYP. MAX. 0.230 DIM. Controlling Dimension in Inches 1011000D 3/4 SD2931 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . 4/4
SD2931
1. 物料型号: - 型号:SD2931 - 封装:M174 (.500 DIA 4L N/HERM W/FLG)

2. 器件简介: - SD2931是一款金镀层N-Channel MOS场效应射频功率晶体管,适用于50V直流大信号应用,频率范围高达230MHz。

3. 引脚分配: - 1. Drain(漏极) - 2. Source(源极) - 3. Gate(栅极) - 4. Source(源极)

4. 参数特性: - 绝对最大额定值(Tcase=25°C): - V(BR)DSS(漏源电压):125V - VDGR(漏栅电压,Ras=1MΩ):125V - VGs(栅源电压):±20V - ID(漏电流):16A - PDISs(功率耗散):292W - TJ(最大工作结温):200°C - TSTG(存储温度):-65至150°C - 热阻: - Rth(-e)(结壳热阻):0.6°C/W

5. 功能详解: - 该晶体管在175MHz频率下,最小输出功率为150W,增益至少为14dB,适用于高频、甚高频和超高频应用。

6. 应用信息: - 适用于50V直流大信号应用,频率范围高达230MHz。

7. 封装信息: - 封装类型:M174 (.500 DIA 4L N/HERM W/FLG) - 机械尺寸数据以英寸和毫米为单位提供,包括最小、典型和最大尺寸。
SD2931 价格&库存

很抱歉,暂时无法提供与“SD2931”相匹配的价格&库存,您可以联系我们找货

免费人工找货