SD2932

SD2932 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH PULL • POUT = 300 W MIN. WITH 15 dB GAIN @ 175 MHz M244 epoxy sealed DESCRIPTION The SD2932 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2932 it is intended for use in 50 V dc large signal applications up 250 MHz. PIN CONNECTION 1 1 3 2 1. Drain 2. Gate 2 3 3. Source ORDER CODES Order Codes SD2932 Marking SD2932 Package M244 Packaging Plastic Tray ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C) Symbol V(BR)DSS VDGR VGS ID PDISS Tj TSTG Drain Source Voltage Drain-Gate Voltage (RGS = 1MΩ) Gate-Source Volatge Drain Current Power Dissipation Max. Operating Junction Temperature Storage Temperature Parameter Value 125 125 ±20 40 500 +200 -65 to +150 Unit V V V A W °C °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 0.35 REV. 5 July 2004 1/12 °C/W SD2932 ELECTRICAL SPECIFICATION (TCASE = 25°C) STATIC (Per Section) Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) GFS CISS COSS CRSS VGS = 0 V VGS = 0 V VGS = 20 V VDS = 10 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Test Conditions IDS = 100 mA VDS = 50 V VDS = 0 V ID = 250 mA ID = 10 A ID = 5 A VDS = 50 V VDS = 50 V VDS = 50 V f = 1 MHz f = 1 MHz f = 1 MHz 5 480 190 18 1.5 Min. 125 50 250 4 3 Typ. Max. Unit V µA nA V V mho pF pF pF DYNAMIC Symbol POUT GPS ηD Load Mismatch VDD = 50 V VDD = 50 V VDD = 50 V Test Conditions IDQ = 500 mA IDQ = 500 mA POUT = 300 W IDQ = 500 mA POUT = 300 W f = 175 MHz f = 175 MHz f = 175 MHz f = 175 MHz Min. 300 15 50 5:1 16 60 Typ. Max. Unit W dB % VSWR VDD = 50 V IDQ = 500 mA POUT = 300 W All Phase Angles IMPEDANCE DATA D ZDL Typical Input Impedance Typical Drain Load Impedance G Zin S FREQ 175 MHz ZIN (Ω) 0.92 - j 0.14 ZDL (Ω) 3.17 + j 4.34 Measured Gate to Gate and Drain to Drain, respectively. 2/12 SD2932 TYPICAL PERFORMANCE Maximum Thermal Resistance vs. Case Temperature Safe Operating Area 100 0.42 Rth(j-c) (ºC/W) 0.4 Ids, DRAIN CURRENT (A) 0.38 10 (1) 0.36 0.34 25 30 35 40 45 50 55 60 65 70 75 80 85 1 1 10 100 1000 Tc, CASE TEMPERATURE (°C) Vds, DRAIN SOURCE VOLTAGE (V) (1) Current in this area may be limited by Rds(on) Two sides, each section equally loaded Capacitance vs. Drain-Source Voltage Drain Current vs. Gate Voltage 10000 20 ID, DRAIN CURRENT (A) C, CAPACITANCE (pF) Vds=10 V T=-20 °C T=+25 °C 15 1000 Ciss Coss 10 T=+80 °C 100 5 Crss 10 0 10 20 30 40 50 0 2 2.5 3 3.5 4 4.5 5 5.5 6 VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V) Gate Voltage vs. Case Temperature VGS, GATE-SOURCE VOLTAGE (NORMALIZED) 1.15 1.1 Id=10 A Id=9 A Id=5 A Id=7 A 1.05 Id=11 A 1 0.95 Id=4 A 0.9 Id=2 A Id=.1 A Id=1 A 0.85 Id=.25 A 0.8 -25 0 25 50 75 100 Tcase, CASE TEMPERATURE (°C) 3/12 SD2932 TYPICAL PERFORMANCE (175 MHz) Output Power vs. Input Power Output Power vs. Input Power 600 600 Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W) T=-20 °C 500 400 300 200 100 0 0 2 4 6 8 10 12 14 16 Vdd=50V Idq=2 x 250mA F=175Mhz Vdd=50 V 500 400 T=+25 °C Vdd=40 V T=+80 °C 300 200 100 0 Vdd=50V Idq=2 x 250mA F=175Mhz 18 20 22 0 2 4 6 8 10 12 14 16 18 20 22 Pin, INPUT POWER (W) Pin, INPUT POWER(W) Power Gain vs. Output Power Efficiency vs. Output Power 18 80 70 Gp, POWER GAIN (dB) 17 16 15 14 13 12 11 10 0 100 200 300 400 500 Vdd=50V Idq=2 x 250mA F=175Mhz Nc, EFFICIENCY (%) 60 50 40 30 20 10 0 100 200 300 400 500 Vdd=50V Idq=2 x 250mA F=175Mhz Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W) Output Power vs. Supply Voltage Output Power vs. Gate Voltage 450 400 350 300 250 200 150 100 24 26 28 30 32 34 36 38 40 42 44 46 48 50 Pin=3.9 W Pin=7.8 W Idq=2 x 250mA F=175Mhz 400 Pin=15.6 W Pout, OUTPUT POWER (W) T=+25 °C Pout,OUTPUT POWER (W) 300 T=-20 °C T=+80 °C 200 100 Vdd=50V Idq=2 x 250mA F=175Mhz 0 -3 -2 -1 0 1 2 3 Vdd,DRAIN VOLTAGE (V) VGS, GATE_SOURCE VOLTAGE (V) 4/12 SD2932 175 MHz Test Circuit Schematic (Production Test Circuit) NOTES: 1. DIMENSION AT COMPONENT SYMBOL ARE REFERENCE FOR COMPONENT PLACEMENT. 2. GAP BETWEEN GROUND & TRANSMISSION LINES IS + 0.002{0.05} - O.OOO[0.00] TYP REF. 1022256B 175 MHz Test Circuit Component Part List R1,R2,R5,R6 R3,R4 R7,R8 R9,R10 C1,C4 C2,C3,C7,C8,C17,C19,C20,C21 C5 C6 C9,C10 C11,C12, C13 C14,C15,C24,C25 C16,C18 C22,C23 C26,C27 C28 B1 B2 T1 T2 L1 FB1,FB5 FB2,FB6 FB3 FB4 PCB 470 Ohm 1 W, Surface Mount Chip Resistor 360 Ohm 0.5 W, Carbon Comp. Axial Lead Resistor or Equivalent 560 Ohm 2 W, Resistor Two Turn Wire Air-Wound Axial Lead Resistor 20 K Ohm 3.09 W, 10 Turn Wirewound Precision Potentiometer 680 pF ATC 130B Surface Mount Ceramic Chip Capacitor 10000 pF ATC 200B Surface Mount Ceramic Chip Capacitor 75 pF ATC 100B Surface Mount Ceramic Chip Capacitor ST40 25 pF - 115 pF Miniature variable Trimmer 47 pF ATC 100B Surface Mount Ceramic Chip Capacitor 43 pF ATC 100B Surface Mount Ceramic Chip Capacitor 1200 pF ATC 700B Surface Mount Ceramic Chip Capacitor 470 pF ATC 700B Surface Mount Ceramic Chip Capacitor 0.1 µF / 500 V Surface Mount Ceramic Chip Capacitor 0.01 µF / 500 V Surface Mount Ceramic Chip Capacitor 10 µF / 63 Aluminum Eletrolytic Axial Lead Capacitor 50 Ohm RG316 O.D 0.076[1.93] L = 11.80[299.72] Flexible Coaxial Cable 4 Turns thru Fair-rite Bead 50 Ohm RG-142B O.D 0.165[4.19] L = 11.80[299.72] Flexible Coaxial Cable R.F. Transformer 4:1, 25 Ohm O.D RG316-25 O.D 0.080[2.03] L = 5.90[149.86] Flexible Coaxial Cable 2 Turns thru Fair-rite Multi-Aperture Core R.F. Transformer 1:4, 25 Ohm Semi-rigid Coaxial Cable O.D. 0.141[3.58] L = 5.90[149.86] Inductor λ 1/4 Wave 50 Ohm O.D 0.165[4.19] L = 11.80 [299.72] Flexible Coaxial Cable 2 Turns thru Fair-rite Bead Shield Bead Multi-aperture Core Multilayer Ferrite Chip Bead (Surface Mount) Surface Mount Emi Shield Bead Woven Glass Reinforced PTFE Microwave Laminate 0.06”, 1 oz EDCu, Both sides, εr = 2.55 5/12 SD2932 175 MHz Test Circuit Photomaster 8.50 inches 175 MHz Test Fixture 6/12 4 inches SD2932 TYPICAL BROADBAND DATA (175 - 230 MHz) Input Power vs. Frequency Power Gain vs. Frequency 12 18 Pin , INPUT POWER (W) 10 8 6 4 2 160 Gp , POWER GAIN (dB) 17 16 15 14 13 12 11 10 160 170 Vdd = 50V Idq = 300 mA Pout = 250W Vdd = 50V Idq = 300 mA Pout = 250W 180 190 200 210 220 230 240 170 180 190 200 210 220 230 240 FREQUENCY (MHz) FREQUENCY (MHz) Efficiency vs. Frequency Return Loss vs. Frequency Nd , DRAIN EFFICIENCY (%) 80 75 70 65 60 55 50 45 160 170 180 190 200 210 220 230 240 0 RTL , RETURN LOSS (dB) Vdd = 50V Idq = 300 mA Pout = 250W -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 160 Vdd = 50V Idq = 300 mA Pout = 250W 170 180 190 200 210 220 230 240 FREQUENCY (MHz) FREQUENCY (MHz) 1 dB Compression Point vs. Frequency P1dB , 1dB COMPRESSION (W) 350 325 300 275 Vdd = 50V Idq = 300 mA 170 180 190 200 210 220 230 240 250 160 FREQUENCY (MHz) 7/12 SD2932 175 - 230 MHz Test Circuit Layout (Engineering Fixture) 175 - 230 MHz Circuit Layout Component Part List PCB T1 T2,T3 T4,T5 C1 C2,C3 C4 C5 C6,C11 C7 C8,C9,C13 C10 C12 C14 R1,R3 R2 R4 R5 R6 D1 L1 L2 L3 L4 L5 1/32” Woven Fiberglass 0.030 Cu, sides, εr = 4.8 50 Ohm Flexible Coax Cable OD 0.06”, 3” Long. Ferrite Core NEOSIDE 9:1Transformer, 16.5 Ohm Flexible Coax Cable 0.1”, 3” Long 4:1 Transformer, 25 Ohm Flexible Coax Cable OD 0.06”, 5” Long 8.2 pF Ceramic Cap 100 pF Ceramic Cap 2 - 18 pF Chip Cap 47 pF Ceramic Cap 47 nF Ceramic CAp 56 pF ATC Chip Cap 470 pF ATC Chip Cap 100 nF Ceramic Cap 2 x 330 nF / 50 V Cap 10 nF / 63 V Electrolityc Cap 47 Ohm Resistor 6.8 K Ohm Chip Resistor 4.7 K Ohm Multi Turns Trim Resistor 8.2 K Ohm / 5 W Resistor 3.3 K Ohm / 5 W Resistor 6.8 V Zener Diode 20 nH Inductor 70 nH Inductor 30 nH Inductor 10 nH Inductor 15 nH Inductor 8/12 SD2932 TYPICAL BROADBAND DATA (88 -108 MHz) Input Power vs. Frequency Power Gain vs. Frequency 4 22 Pin , INPUT POWER (W) 3.5 Vdd = 50V Idq = 200 mA Pout = 300W Gp , POWER GAIN (dB) 21 20 19 18 17 16 3 Vdd = 50V Idq = 200 mA Pout = 300W 2.5 85 90 95 100 105 110 85 90 95 100 105 110 FREQUENCY (MHz) FREQUENCY (MHz) Efficiency vs. Frequency Return Loss vs. Frequency 80 76 74 72 70 68 66 64 62 60 85 90 95 100 105 110 0 RTL , RETURN LOSS (dB) 78 Nd , EFFICIENCY (%) -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 85 90 95 100 105 110 Vdd = 50V Idq = 200 mA Pout = 300W Vdd = 50V Idq = 200 mA Pout = 300W FREQUENCY (MHz) FREQUENCY (MHz) 2nd Harmonic vs. Frequency (88 - 108 MHz) 3rd Harmonic vs. Frequency (88 - 108 MHz -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 -32 -34 -36 85 90 95 100 Vdd = 50V Idq = 200 mA Pout = 300W -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 -32 -34 -36 85 90 95 100 H2 , 2nd HARMONIC (dBc) H3 , 3rd HARMONIC (dBc) Vdd = 50V Idq = 200 mA Pout = 300W 105 110 105 110 FREQUENCY (MHz) FREQUENCY (MHz) 9/12 SD2932 88 - 108 MHz Test Circuit Layout (Engineering Fixture) 88 - 108 MHz Circuit Layout Component Part List PCB T1 T2,T3 T4,T5 T6 FB1 C1 C2,C3,C4,C7,C8 C5,C6 C9 C10 C11 R1 R2,R4 R3 R5 R6 R7 R8 D1 L1 L2 L3 1/32” Woven FiberGlass 0.030 Cu, 2 sides, εr = 4.8 50 Ohm Flexible Coax Cable OD 0.06”, 5” Long 9:1 Transformer, 25 Ohm Flexible Coax Cable OD 0.1”, 3.9”. Ferrite Core NEOSIDE 4:1 Transformer, 25 Ohm Flexible Coax Cable OD 0.1”, 5” Long 50 Ohm Flexible Coax Cable OD 0.1”, 5” Long vk200 10 pF Ceramic Cap 1 nF Chip Cap 1 nF ATC Chip Cap 470 pF ATC Chip Cap 100 nF Chip Cap 100 mF / 63 V Electrolityc Cap 56 Ohm Resistor 10 Ohm Chip Resistor 10 K Ohm Resistor 5.6 Ohm Resistor 10 K Ohm, 10 Turn Trim Resistor 3.3 K Ohm / 5 W Resistor 15 Ohm / 5 W Resistor 6.6 V Zener Diode 10 nH Inductor 40 nH Inductor 70 nH Inductor 10/12 SD2932 M244 (.400 x .860 4/L BAL N/HERM W/FLG) MECHANICAL DATA mm Inch MAX 5.84 5.08 3.02 9.65 19.81 10.92 27.94 33.91 0.10 1.52 2.59 4.83 10.03 21.59 34.16 0.15 1.78 2.84 5.84 10.34 22.10 1.335 0.004 0.060 0.102 0.190 0.395 0.850 3.28 9.91 20.82 11.18 0.119 0.380 0.780 0.430 1.100 1.345 0.006 0.070 0.112 0.230 0.407 0.870 MIN. 0.220 0.200 0.129 0.390 0.820 0.440 TYP. MAX 0.230 DIM. A B C D E F G H I J K L M N MIN. 5.59 TYP. Controlling Dimension: Inches 1020876B 11/12 SD2932 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics  2004 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. 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