SD2932W

SD2932 HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features     Gold metallization Excellent thermal stability Common source push-pull configuration POUT = 300 W min. with 15 dB gain @ 175 MHz Description The SD2932 is a gold metallized N-channel MOS field-effect RF power transistor used for 50 V DC large signal applications up to 250 MHz. Figure 1: Pin connection Table 1: Device summary Order code Marking Package Packing SD2932W SD2932(1) M244 Tube Notes: (1)For more details please refer to Section 11: "Marking, packing and shipping specifications" . November 2016 DocID6876 Rev 10 This is information on a product in full production. 1/20 www.st.com Contents SD2932 Contents 1 Electrical data .................................................................................. 3 1.1 Maximum ratings ............................................................................... 3 1.2 Thermal data ..................................................................................... 3 2 Electrical characteristics ................................................................ 4 3 Impedance data ............................................................................... 5 4 Typical performance ....................................................................... 6 4.1 Typical performance (175 MHz) ........................................................ 8 5 Test circuit (175 MHz) ...................................................................... 9 6 Test circuit photomaster ............................................................... 11 7 Typical broadband data (175-230 MHz) ........................................ 12 8 Test circuit 175 - 230 MHz ............................................................ 13 9 Typical broadband data (88 - 108 MHz) ........................................ 14 10 11 Test circuit 88-108 MHZ ................................................................ 15 Marking, packing and shipping specifications............................ 16 12 Package information ..................................................................... 17 12.1 13 2/20 M244 package information .............................................................. 17 Revision history ............................................................................ 19 DocID6876 Rev 10 SD2932 Electrical data 1 Electrical data 1.1 Maximum ratings TCASE = 25 °C Table 2: Absolute maximum ratings Symbol 1.2 Parameter Value Unit V(BR)DSS Drain source voltage 125 V VDGR Drain-gate voltage (RGS = 1 MΩ) 125 V VGS Gate-source voltage ±40 V ID Drain current 40 A PDISS Power dissipation 500 W TJ Max. operating junction temperature +200 °C TSTG Storage temperature -65 to +150 °C Value Unit 0.35 °C/W Thermal data Table 3: Thermal data Symbol RthJC Parameter Junction-to-case thermal resistance DocID6876 Rev 10 3/20 Electrical characteristics 2 SD2932 Electrical characteristics TCASE = 25 °C Table 4: Static Symbol Test conditions Min. Typ. Max. Unit V(BR)DSS VGS = 0 V IDS = 100 mA IDSS VGS = 0 V VDS = 50 V 50 µA IGSS VGS = 20 V VDS = 0 V 250 nA VGS(Q) VDS = 10 V ID = 250 mA 4 V VDS(ON) VGS = 10 V ID = 10 A 3.0 V GFS VDS = 10 V ID = 5 A ΔVGS(1) VDS = 10 V ID = 250 mA CISS VGS = 0 V VDS = 50 V f = 1 MHz 480 pF COSS VGS = 0 V VDS = 50 V f = 1 MHz 190 pF CRSS VGS = 0 V VDS = 50 V f = 1 MHz 18 pF 125 V 1.5 5 mho 200 mV Notes: (1)Absolute VGS difference between side 1 and side 2 of the device. Table 5: Dynamic Symbol 4/20 Test conditions Min. Typ. Max. Unit POUT VDD = 50 V GPS VDD = 50 V IDQ = 500 mA POUT = 300 W f = 175 MHz 15 16 dB ηD VDD = 50 V IDQ = 500 mA POUT = 300 W f = 175 MHz 50 60 % Load mismatch VDD = 50 V IDQ = 500 mA f = 175 MHz All phase angles 5:1 IDQ = 500 mA f = 175 MHz 300 W POUT = 300 W DocID6876 Rev 10 VSWR SD2932 3 Impedance data Impedance data Figure 2: Impedance data Table 6: Impedance data f ZIN(Ω) ZDL(Ω) 175 MHz 0.92 - j 0.14 3.17 + j 4.34 Measured gate-to-gate and drain-to-drain, respectively. DocID6876 Rev 10 5/20 Typical performance 4 SD2932 Typical performance Figure 3: Maximum thermal resistance vs. case temperature Figure 4: Gate voltage vs. case temperature Figure 6: Drain current vs. gate voltage Figure 5: Capacitance vs. drain-source voltage 20 Tc=-20 °C Tc=+25 °C 15 10 Tc=+80 °C 5 0 2 2.5 3 V GS 6/20 DocID6876 Rev 10 3.5 4 4.5 , GATE-SOURCE VOLTAGE (V) 5 5.5 6 SD2932 Typical performance Figure 7: Maximum safe operating area Figure 8: Transient thermal impedance Figure 9: Transient thermal model DocID6876 Rev 10 7/20 Typical performance 4.1 8/20 SD2932 Typical performance (175 MHz) Figure 10: Output power vs. input power Figure 11: Output power vs. input power at different Tc Figure 12: Power gain vs. output power Figure 13: Efficiency vs. output power Figure 14: Output power vs. supply voltage Figure 15: Output power vs. gate voltage DocID6876 Rev 10 SD2932 5 Test circuit (175 MHz) Test circuit (175 MHz) Figure 16: 175 MHz production test circuit schematic Table 7: 175 MHz test circuit part list Component Description R1, R2, R5, R6 470 Ohm 1 W, surface mount chip resistor R3, R4 360 Ohm 0.5 W, carbon comp. axial lead resistor or equivalent R7, R8 560 Ohm 2 W, resistor 2 turn wire air-wound axial lead resistor R9, R10 20 kOhm 3.09 W, 10 turn wirewound precision potentiometer C1, C4 680 pF ATC 130B surface mount ceramic chip capacitor C2, C3, C7, C8, C17, C19, C20, C21 10000 pF ATC 200B surface mount ceramic chip capacitor C5 75 pF ATC 100B surface mount ceramic chip capacitor C6 ST40 25 pF - 115 pF miniature variable trimmer C9, C10 47 pF ATC 100B surface mount ceramic chip capacitor C11, C12, C13 43 pF ATC 100B surface mount ceramic chip capacitor C14, C15, C24, C25 1200 pF ATC 700B surface mount ceramic chip capacitor C16, C18 470 pF ATC 700B surface mount ceramic chip capacitor C22, C23 0.1 μF / 500 V surface mount ceramic chip capacitor C26, C27 0.01 μF / 500 V surface mount ceramic chip capacitor C28 10 μF / 63 aluminum electrolytic axial lead capacitor B1 50 Ohm RG316 O.D 0.076[1.93] L = 11.80[299.72] flexible coaxial cable 4 turns through ferrite bead B2 50 Ohm RG-142B O.D 0.165[4.19] L = 11.80[299.72] flexible coaxial cable DocID6876 Rev 10 9/20 Test circuit (175 MHz) SD2932 Component 10/20 Description T1 R.F. transformer 4:1, 25 Ohm O.D RG316-25 O.D 0.080[2.03] L = 5.90[149.86] flexible coaxial cable 2 turns through ferrite multi-aperture core T2 R.F. transformer 1:4, 25 Ohm semi-rigid coaxial cable O.D. 0.141[3.58] L = 5.90[149.86] L1 Inductor λ 1/4 wave 50 Ohm O.D 0.165[4.19] L = 11.80 [299.72] flexible coaxial cable 2 turns through ferrite bead FB1, FB5 Shield bead FB2, FB6 Multi-aperture core FB3 Multilayer ferrite chip bead (surface mount) FB4 Surface mount EMI shield bead PCB Woven glass reinforced PTFE microwave laminate 0.06”, 1 oz EDCu, both sides, εr = 2.55 DocID6876 Rev 10 SD2932 6 Test circuit photomaster Test circuit photomaster Figure 17: 175 MHz test circuit photomaster Figure 18: 175 MHz test fixture DocID6876 Rev 10 11/20 Typical broadband data (175-230 MHz) 7 SD2932 Typical broadband data (175-230 MHz) Figure 19: Input power vs. frequency Figure 20: Power gain vs. frequency Figure 21: Efficiency vs. frequency Figure 22: Return loss vs. frequency Figure 23: 1 dB compression point vs. frequency 12/20 DocID6876 Rev 10 SD2932 8 Test circuit 175 - 230 MHz Test circuit 175 - 230 MHz Figure 24: 175 - 230 MHz test circuit layout (engineering fixture) Table 8: 175 - 230 MHz circuit layout component part list Component Description PCB 1/32” woven fiberglass 0.030 Cu, sides, εr = 4.8 T1 50 Ohm flexible coax cable OD 0.06”, 3” long. ferrite core NEOSIDE T2, T3 9:1 transformer, 16.5 Ohm flexible coax cable 0.1”, 3” long T4, T5 4:1 transformer, 25 Ohm flexible coax cable OD 0.06”, 5” long C1 8.2 pF ceramic cap C2, C3 100 pF ceramic cap C4 2 - 18 pF chip cap C5 47 pF ceramic cap C6, C11 47 nF ceramic cap C7 56 pF ATC chip cap C8, C9, C13 470 pF ATC chip cap C10 100 nF ceramic cap C12 2 x 330 nF / 50 V cap C14 10 nF / 63 V electrolityc cap R1, R3 47 Ohm resistor R2 6.8 kOhm chip resistor R4 4.7 kOhm multi turn trim resistor R5 8.2 kOhm / 5 W resistor R6 3.3 kOhm / 5 W resistor D1 6.8 V Zener diode L1 20 nH inductor L2 70 nH inductor L3 30 nH inductor L4 10 nH inductor L5 15 nH inductor DocID6876 Rev 10 13/20 Typical broadband data (88 - 108 MHz) 9 SD2932 Typical broadband data (88 - 108 MHz) Figure 25: Input power vs. frequency (POUT=300) Figure 26: Power gain vs. frequency (POUT=300) Figure 27: Efficiency vs. frequency (POUT=300) Figure 28: Return loss vs. frequency (POUT=300) Figure 29: 2nd harmonic vs. frequency (88 - 108 MHz) Figure 30: 3rd harmonic vs. frequency (88 - 108 MHz) 14/20 DocID6876 Rev 10 SD2932 10 Test circuit 88-108 MHZ Test circuit 88-108 MHZ Figure 31: 88 - 108 MHz test circuit layout (engineering fixture) Table 9: 88 - 108 MHz circuit layout component part list Component Description PCB 1/32” woven fiberglass 0.030 Cu, sides, εr = 4.8 T1 50 Ohm flexible coax cable OD 0.06”, 3” long T2, T3 9:1 transformer, 25 Ohm flexible coax cable 0.1”, 3.9” ferrite core NEOSIDE T4, T5 4:1 transformer, 25 Ohm flexible coax cable OD 0.1”, 5” long T6 50 Ohm flexible coax cable OD 0.1”, 5” long FB1 vk200 C1 10 pF ceramic cap C2, C3, C4, C7, C8 1 nF chip cap C5, C6 1 nF ATC chip cap C9 470 pF ceramic cap C10 100 nF chip cap C11 100 mF / 63 V electrolytic cap R1 56 Ohm resistor R2, R4 10 Ohm chip resistor R3 10 kOhm resistor R5 5.6 Ohm resistor R6 10 kOhm, 10 turn trim resistor R7 3.3 kOhm / 5 W resistor R8 15 Ohm / 5 W resistor D1 6.8 V Zener diode L1 10 nH inductor L2 40 nH inductor L3 70 nH inductor DocID6876 Rev 10 15/20 Marking, packing and shipping specifications 11 SD2932 Marking, packing and shipping specifications Table 10: Packing and shipping specifications Order code Packing Pieces per tray Dry pack humidity VGS and GFS code Lot code SD2932W Tube 15 < 10% Not mixed Not mixed Figure 32: SD2932 marking layout Table 11: Marking specifications Symbol W Wafer process code CZ Assembly plant xxx Last 3 digits of diffusion lot VY Diffusion plant MAR CZ 16/20 Description Country of origin Test and finishing plant y Assembly year yy Assembly week DocID6876 Rev 10 SD2932 12 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 12.1 M244 package information Figure 33: M244 (0.400 x .860 4L BAL N/HERM W/FLG) package outline DocID6876 Rev 10 17/20 Package information SD2932 Table 12: M244 (0.400 x .860 4L BAL N/HERM W/FLG) package mechanical data mm Dim. Min. A 5.59 B Max. 5.84 5.08 C 3.02 3.28 D E 9.65 19.81 9.91 20.82 F 10.92 11.18 27.94 G 18/20 Typ. H 33.91 34.16 I 0.10 0.15 J 1.78 K 1.52 2.59 L 4.83 5.84 M 10.03 10.34 N 21.59 22.10 DocID6876 Rev 10 2.84 SD2932 13 Revision history Revision history Table 13: Document revision history Date Revision Changes 15-Jul-2004 5 24-Jan-2006 6 Updated Table 4: Static (per section). 23-Nov-2009 7 Inserted ΔVGS in Table 4: Static (per section). 31-Mar-2010 8 Added Figure 7, Figure 8 and Figure 9. 11-Jan-2012 9 Inserted Chapter 12: Marking, packing and shipping specifications. Minor text changes. 24-Nov-2016 10 Updated Section 1.1: "Maximum ratings". DocID6876 Rev 10 19/20 SD2932 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2016 STMicroelectronics – All rights reserved 20/20 DocID6876 Rev 10