SD2933

SD2933 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs ADVANCE DATA • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 300 W MIN. WITH 20 dB GAIN @ 30 MHz • THERMALLY ENHANCED PACKAGING M177 DESCRIPTION The SD2933 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 50 V DC large signal applications up to 150 MHz epoxy sealed ORDER CODE SD2933 BRANDING SD2933 PIN CONNECTION 1. Drain 2. Source 3. Gate 4. Source 5. Source ABSOLUTE MAXIMUM RATINGS (TCASE = 25 0C) Symbol V(BR)DSS VDGR V GS ID PDISS Tj TSTG R th(j-c) R th(c-s) Jun 2000 Parameter Drain Source Volatage Drain-Gate Voltage (RGS = 1MΩ) Gate-Source Voltage Drain Current Power Dissipation Max. Operating Junction Temperature Storage Temperature Value 125 125 ±20 40 648 200 -65 to 150 0 0 Unit V V V A W 0 0 C C THERMAL DATA Junction-Case Thermal Resistance Case-Heatsink Thermal Resistance* 0.27 0.15 C/W C/W 1/8 * Determined using a flat aluminum or copper heatsink with thermal compound apllied (Dow Corning 340 or equivalent). SD2933 ELECTRICAL SPECIFICATION (TCASE = 25 0C) STATIC Symbol V(BR)DSS IDSS IGSS V GS(Q) VDS(ON) gFS C ISS COSS C RSS VGS = 0 V VGS = 0 V VGS = 20 V VDS = 10 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Parameter IDS = 200 mA VDS = 50 V VDS = 0 V ID = 250 mA ID = 10 A ID = 10 A VDS = 50 V VDS = 50 V VDS = 50 V f = 1 MHz f = 1 MHz f = 1 MHz 10 1000 372 29 2 Min. 125 10 10 5 3 Typ. Max. Unit V mA µA V V mho pF pF pF REF. 7170198B DYNAMIC Symbol POUT GPS f = 30 MHz f = 30 MHz f = 30 MHz Parameter V DD = 50 V V DD = 50 V V DD = 50 V POUT = 300 W POUT = 300 W POUT = 300 W IDQ = 250 mA IDQ = 250 mA IDQ = 250 mA IDQ = 250 mA Min. 300 20 50 3:1 Typ. 400 23.5 65 Max. Unit W dB % VSWR ηD Load Mismatch f = 30 MHz V DD = 50 V All Phase Angles IMPEDANCE DATA Frequency 30 MHz 108 MHz 150 MHz ZIN (Ω) 1.8 - j 0.2 1.9 + j 0.2 1.9 + j 0.3 ZDL (Ω) 2.8 + j 2.3 1.6 + j 1.4 1.5 + j 1.6 2/8 SD2933 TYPICAL PERFORMANCE Capacitance vs. Drain-Source Voltage Drain Current vs. Gate Voltage 10000 15 f= 1MHz Id, DRAIN CURRENT (A) Vdd= 10V C, CAPACITANCE (pF) Ciss Tc=+80°C Tc=+25°C 1000 10 Coss 100 Crss 5 Tc=-20°C 10 0 10 20 30 40 50 0 1 1.5 2 2.5 3 3.5 4 Vds, DRAIN-SOURCE VOLTAGE (V) Vgs, GATE-SOURCE VOLTAGE (V) Gate-Source Voltages vs. Case Temperature Maximum Thermal Resistance vs. Case Temperature Vgs, GATE-SOURCE VOLTAGE (NORMALIZED) 1.15 0.33 Rth(j-c), THERMAL RESISTANCE (°C/W) 1. 1 1.05 1 0.95 0.9 Vdd= 10 V 0.85 0.8 -25 0 25 50 Id=12 A Id=10 A Id= 7 A Id=15 A Id= 5 A 0.32 0.31 0.3 0.29 0.28 0.27 0.26 Id=.1 A Id= 4 A Id= 3 A Id= 2 A Id=1 A Id=.25A 75 100 25 35 45 55 65 75 85 Tc, CASE TEMPERATURE (ºC) Tc, CASE TEMPERATURE (°C) 3/8 SD2933 TYPICAL PERFORMANCE Output Power vs. Input Power Output Power vs. Input Power 400 500 Vdd = 50V Tc = +250C Pout, OUTPUT POWER (W) Tc= -200C Pout,OUTPUT POWER(W) 300 Vdd = 40V 400 Tc = +800C 300 200 200 100 F= 30 MHz Idq= 250 mA F=30MHz Vdd=50V Idq=250mA 100 0 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 0 0 0.5 1 1.5 2 2.5 3 Pin, INPUT POWER ( W ) Pin, INPUT POWER (W) Power Gain vs. Output Power Drain Efficiency vs. Output Power 26 80 70 24 Gp, POWER GAIN (dB) Nd, DRAIN EFFICIENCY (%) 60 50 22 20 F= 30 MHz Vdd= 50 V Idq= 250 mA 40 30 20 F= 30 MHz Vdd= 50 V Idq= 250 mA 18 16 0 100 200 Pout, OUTPUT POWER (W) 300 400 0 100 200 300 400 Pout, OUTPUT POWER (W) Output Power vs. Supply Voltage Output Power vs. Gate Voltage 450 400 500 F= 30 MHz Vdd= 50 V Tc= +25°C Tc= -20°C Pout, OUTPUT POWER (W) 350 300 250 200 150 100 24 26 28 30 32 34 36 38 Pin= 2.6 W Pout, OUTPUT POWER (W) F= 30 MHz Idq= 250 mA 400 Pin= 1.3 W 300 Tc= +80°C 200 Pin= 0.65 W 100 0 40 42 44 46 48 50 -3 -2 -1 0 1 2 3 Vdd, SUPPLY VOLTAGE (V) Vgs, GATE-SOURCE VOLTAGE (V) 4/8 SD2933 30 MHZ TEST CIRCUIT SCHEMATIC REF. 1008706A 30 MHz TEST CIRCUIT COMPONENT PART LIST 5/8 SD2933 30 MHZ TEST CIRCUIT PHOTOMASTER REF. 1008706A 30 MHZ PRODUCTION TEST FIXTURE 6/8 SD2933 M177 (.550 DIA. 4/L N/HERM W/FLG) MECHANICAL DATA DIM. MIN. A B C D E F G H I J K 27.43 15.88 5.72 6.73 21.84 28.70 13.84 0.08 2.49 3.81 mm TYP. MAX 5.97 6.96 22.10 28.96 14.10 0.18 2.74 4.32 7.11 28.45 16.13 1.080 0.625 MIN. 0.225 0.265 0.860 1.130 0.545 0.003 0.098 0.150 Inch TYP. MAX 0.235 0.275 0.870 1.140 0.555 0.007 0.108 0.170 0.280 1.120 0.635 Controlling Dimension: Inches 1011012D 7/8 SD2933 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. N o license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics , 2000 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 8/8