SD2933W

SD2933 HF/VHF/UHF RF power N-channel MOSFETs Datasheet - production data Features • Gold metalization • Excellent thermal stability • Common source configuration • POUT = 300 W min. with 20 dB gain @ 30 MHz • Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed Description The SD2933 is a gold metalized N-channel MOS field-effect RF power transistor, intended for use in 50 V dc large signal applications up to 150 MHz. Its special low thermal resistance package makes it ideal for ISM applications, where reliability and ruggedness are critical factors. Figure 1. Pin connection 4 1 5 3 2 1. Drain 3. Gate 2. Source 4, 5. Source Table 1. Device summary Order code Marking Package Packaging SD2933W SD2933(1) M177 Plastic tray 1. For more details please refer to Chapter 6: Marking, packing and shipping specifications. July 2016 This is information on a product in full production. DocID7193 Rev 15 1/16 www.st.com Contents SD2933 Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Typical performance (30 MHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4.1 Test circuit (30 MHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Marking, packing and shipping specifications . . . . . . . . . . . . . . . . . . . 14 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 DocID7193 Rev 15 SD2933 Electrical data 1 Electrical data 1.1 Maximum rating TCASE = 25 °C Table 2. Absolute maximum ratings Symbol V(BR)DSS VDGR VGS ID PDISS EAS EAR(1) TJ TSTG Parameter Value Unit Drain source voltage 125 V Drain-gate voltage (RGS = 1MΩ) 125 V Gate-source voltage ±40 V Drain current 40 A Power dissipation 648 W Avalanche energy, single pulse (ID = 53 A, 800 µH coil) 1100 mJ Avalanche energy, repetitive 50 mJ Max. operating junction temperature 200 °C -65 to +150 °C Storage temperature 1. Repetitive rating: Pulse width limited by maximum junction temperature / repetitive avalanche causes additional power losses that can be calculated as: PAV = EAR * f 1.2 Thermal data Table 3. Thermal data Symbol RthJ-C Parameter Junction to case thermal resistance DocID7193 Rev 15 Value Unit 0.27 °C/W 3/16 16 Electrical characteristics 2 SD2933 Electrical characteristics TCASE = 25 °C Table 4. Static Symbol Test conditions Min. Typ. Max. V(BR)DSS VGS = 0 V IDS = 200 mA IDSS VGS = 0 V VDS = 50 V 100 µA 500 nA 4 V 3.0 V IGSS VGS = 20 V VDS = 0 V (1) VDS = 10 V ID = 250 mA VDS(ON) VGS = 10 V ID = 20 A GFS(1) VDS = 10 V ID = 10 A CISS VGS = 0 V VDS = 50 V COSS VGS = 0 V CRSS VGS = 0 V VGS(Q) 125 Unit V 1.5 see Table 5: GFS sort mho f = 1 MHz 1000 pF VDS = 50 V f = 1 MHz 372 pF VDS = 50 V f = 1 MHz 29 pF 1. VGS(Q) and GFS sorted with alpha/numeric code marked on unit. Table 5. GFS sort GFS sort Value A 10 - 10.99 B 11 - 11.99 C 12 - 12.99 D 13 - 13.99 E 14 - 14.99 F 15 - 15.99 G 16 - 16.99 H 17 - 18 Table 6. Dynamic Symbol 4/16 Test Conditions f = 30 MHz Min. Typ. Max. Unit 300 400 W POUT VDD = 50 V IDQ = 250 mA GPS VDD = 50 V IDQ = 250 mA POUT = 300 W f = 30 MHz 20 23.5 dB ηD VDD = 50 V IDQ = 250 mA POUT = 150 W f = 30 MHz 50 65 % VDD = 50 V IDQ = 250 mA POUT = 300 W f = 30 MHz Load mismatch all phase angles 3:1 DocID7193 Rev 15 VSWR SD2933 3 Impedance Impedance Figure 2. Impedance data schematic D ZDL Typical Drain Load Impedance Typical Input Impedance G ZIN S Table 7. Impedance data f ZIN (Ω) ZDL (Ω) 30 MHz 1.8 - j 0.2 2.8 + j 2.3 108 MHz 1.9 + j 0.2 1.6 + j 1.4 175 MHz 1.9 + j 0.3 1.5 + j 1.6 DocID7193 Rev 15 5/16 16 Typical performance (30 MHz) 4 SD2933 Typical performance (30 MHz) Figure 3. Capacitance vs. drain voltage Figure 4. Drain current vs. gate voltage 10000 15 Ciss Id, Drain Current (A) Capacitance (pF) f= 1 MHz 1000 Coss 100 Crss Vdd=10V Tc = + 80oC 10 Tc = + 25oC 5 Tc = - 20oC 0 10 1 0 10 20 30 40 1.5 2 50 2.5 3 3.5 4 Vgs, Gate-Source Voltage (V) Vds, Drain Source Voltage (V) Figure 6. Maximum thermal resistance vs. case temperature 1.15 0.33 0.32 1.1 Id= 12 A Id= 10 A 1.05 Id= 7 A Id= 5 A Id= 15 A 1 0.95 RTH(j-c) (°C/W) Vgs, GATE-SOURCE VOLTAGE (NORMALIZED) Figure 5. Gate-source voltage vs. case temperature 0.3 0.29 0.28 Id=.1 A 0.27 Id= 4 A 0.9 Id= 3 A Vdd= 10 V 0.26 25 Id= 2 A Id= 1 A 0.85 Id=.25 A 0.8 -25 0 25 50 75 30 35 40 45 50 55 60 65 70 Tc, CASE TEMPERATURE (°C) 100 Tc, CASE TEMPERATURE (ºC) 6/16 0.31 DocID7193 Rev 15 75 80 85 SD2933 Typical performance (30 MHz) Figure 7. Transient thermal impedance 0.30 0.25 Zth , Deg C / W 0.20 0.15 0.10 0.05 0.00 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 Rectangular power pulse width (sec) single pulse 10% 20% 30% 40% 50% 60% 70% 80% 90% AM10216V1 Figure 8. Transient thermal impedance model PR C PR C1 R =.083 Ohm C =.0035904 F I_DC W atts PR C PR C2 R =.099 Ohm C =.1182727 F PR C PR C3 R =.088 Ohm C =2.4810922 F AM10217V1 DocID7193 Rev 15 7/16 16 Typical performance (30 MHz) SD2933 Figure 9. Output power vs. input power Figure 10. Output power vs. input power (at different temperature) 500 Tc= 25°C 300 Pout, Output Power (W) Pout, Output Power (W) 500 Vdd= 50 V 400 Vdd= 40 V 200 f= 30 MHz Idq=250mA 100 Tc= 80°C 300 200 f= 30 MHz Idq= 250 mA Vdd= 50 V 100 0 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 Tc= -20°C 400 2.7 0 Pin, Input Power ( W ) 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 Pin, Input Power (W) Figure 11. Power gain vs. output power Figure 12. Efficiency vs. output power 25 80 24 70 Efficiency (%) Power Gain (dB) 26 23 22 21 19 50 f=30MHz Vdd=50V Idq=250mA 40 30 f= 30 MHz Idq= 250 mA Vdd= 50 V 20 60 20 0 100 200 300 400 Pout, Output Power (W) 18 0 100 200 300 400 Pout, Output Power (W) Figure 13. Output power vs. supply voltage Figure 14. Output power vs. gate voltage 500 450 F= 30 MHz Vdd= 50 V Idq= 250 mA Pin= constant f = 30 MHz Idq = 250 mA 350 Pout, OUTPUT POWER (W) Pout, Output Power (W) 400 Pin = 2.6 W Pin = 1.3 W 300 250 200 Pin = 0.65 W 150 400 Tc= -20°C Tc= +25°C 300 Tc= +80°C 200 100 100 24 26 28 30 32 34 36 38 40 42 44 46 48 50 0 Vdd, Supply Voltage (V) -3 -2 -1 0 1 Vgs, GATE-SOURCE VOLTAGE (V) 8/16 DocID7193 Rev 15 2 3 SD2933 4.1 Typical performance (30 MHz) Test circuit (30 MHz) Figure 15. 30 MHz test circuit schematic Table 8. Transmission line dimensions Dim. Inch mm A 0.532 13.51 B 0.250 6.35 C 0.181 4.59 D 0.383 9.37 E 0.351 8.91 F 0.633 16.08 G 0.477 12.12 H 0.438 11.12 J 0.200 5.08 K 0.164 4.16 L 0.174 4.42 M 0.817 20.75 N 0.350 8.89 P 0.779 19.79 R 0.639 16.23 DocID7193 Rev 15 9/16 16 Typical performance (30 MHz) SD2933 Table 8. Transmission line dimensions (continued) Dim. Inch mm S 0.165 4.19 T 1.017 25.84 U 0.375 9.52 V 0.456 11.58 W 0.325 8.24 X 0.650 16.50 Table 9. 30 MHz test circuit part list Component C1,C9 0.01 μF / 500 V surface mount ceramic chip capacitor C2, C3 750 pF ATC 700B surface mount ceramic chip capacitor C4 300 pF ATC 700B surface mount ceramic chip capacitor C5,C10,C11,C14,C16 10000 pF ATC 200B surface mount ceramic chip capacitor C6 510 pF ATC 700B surface mount ceramic chip capacitor C7 300 pF ATC 700B surface mount ceramic chip capacitor C8 175-680 pF type 46 standard trimmer capacitor C12 47 μF / 63 V aluminum electrolytic radial lead capacitor C13 1200 pF ATC 700B surface mount ceramic chip capacitor C15 100 μF / 63 V aluminum electrolytic radial lead capacitor R1,R3 1 K OHM 1 W surface mount chip resistor R2 560 OHM 2 W wire-wound axis lead resistor T1 HF 2-30 MHz surface mount 9:1 transformer T2 RG - 142B/U 50 OHM coaxial cable OD = 0.165[4.18] L 15”[381.00] covered with 15”[381.00] tinned copper tubular brand 13/65” [5.1] width L1 1 3/4 turn air-wound 16 AWG ID = 0.219 [5.56] poly-coated magnet wire L2 1 3/4 turn air-wound 12 AWG ID = 0.250 [6.34] bus bar wire RFC1,RFC2 10/16 Description 3 turns 14 AWG wire through ferrite toroid FB1 Surface mount EMI shield bead FB2 Toroid PCB ULTRALAM 2000. 0.030” THK, εr = 2.55, 2 Oz ED CU both sides DocID7193 Rev 15 SD2933 Typical performance (30 MHz) 4 inches Figure 16. 30 MHz test circuit photomaster 6.4 inches Figure 17. 30 MHz test circuit DocID7193 Rev 15 11/16 16 Package information 5 SD2933 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Figure 18. M177 package outline(a) a. Controlling dimensions in inches. 12/16 DocID7193 Rev 15 SD2933 Package information Table 10. M177 (.500 dia 4/L N/HERM W/FLG) package mechanical data mm Inch Dim. Min. Typ. Max. Min. Typ. Max. A 5.72 5.97 0.225 0.235 B 6.73 6.96 0.265 0.275 C 21.84 22.10 0.860 0.870 D 28.70 28.96 1.130 1.140 E 13.84 14.10 0.545 0.555 F 0.08 0.18 0.003 G 2.49 2.74 0.098 0.108 H 3.81 4.32 0.150 0.170 I - 7.11 - 0.007 0.280 J 27.43 28.45 1.080 1.120 K 15.88 16.13 0.625 0.635 DocID7193 Rev 15 13/16 16 Marking, packing and shipping specifications 6 SD2933 Marking, packing and shipping specifications Table 11. Packing and shipping specifications Order code Packaging Pcs per tray Dry pack humidity GFS code Lot code SD2933W Plastic tray 25 < 10% Not mixed Not mixed Figure 19. Marking layout for SD2933W Table 12. Marking specifications Symbol W Wafer process code X GFS sort CZ Assembly plant xxx Last 3 digits of diffusion lot VY Diffusion plant MAR CZ 14/16 Description Country of origin Test and finishing plant y Assembly year yy Assembly week DocID7193 Rev 15 SD2933 7 Revision history Revision history Table 13. Document revision history Date Revision 30-Jul-2004 9 Changes 22-Sep-2011 10 Inserted Section 6: Marking, packing and shipping specifications. Updated EAS in Table 2: Absolute maximum ratings. Minor text changes to improve readability. 03-Oct-2011 11 Updated parameter ZIN in Table 7: Impedance data. 17-Nov-2011 12 Inserted Figure 7: Transient thermal impedance and Figure 8: Transient thermal impedance model. 10-Jan-2012 13 Updated Figure 7: Transient thermal impedance. 30-Sep-2013 14 – Added row for “Avalanche energy, repetitive” and footnote to Table 2: Absolute maximum ratings – Minor text and formatting changes 14-Jul-2016 15 – Updated VGS in Table 2: Absolute maximum ratings. – Minor text changes. DocID7193 Rev 15 15/16 16 SD2933 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2016 STMicroelectronics – All rights reserved 16/16 DocID7193 Rev 15