SD2941-10W

SD2941-10 HF/VHF/UHF RF power N-channel MOSFETs Datasheet - production data Features • Gold metallization • Excellent thermal stability • Common source configuration • POUT = 175 W min. with 15 dB gain @ 175 MHz, 50 V • POUT = 135 W typ. with 14 dB gain @ 123 MHz, 28 V M174 Epoxy sealed • Low RDS(on) • Thermally enhanced packaging for lower junction temperatures • In compliance with the 2002/95/EC1 European directive Figure 1. Pin connection 1. Drain 4 1 2. Source 3. Gate 4. Source 3 2 Description The SD2941-10 is a gold metalized N-channel MOS field-effect RF power transistor, intended for use in 28 V to 50 V dc large signal applications up to 230 MHz. It offers 25% lower RDS(on) than the industry standard, with 20% higher PSAT than ST's SD2931-10 device. The SD2941-10 is housed in the low thermal M174 non-pedestal package, offering 25% lower thermal resistance than the industry standard, thus rendering it the "best-in-class" transistor for ISM applications, where reliability and ruggedness are critical factor. Table 1. Device summary Order code Marking Base qty. Package Packaging(1) SD2941-10W SD2941-10(1) 25 pcs M174 Plastic tray 1. For more details please refer to Chapter 7: Marking, packing and shipping specifications. August 2015 This is information on a product in full production. DocID11815 Rev 6 1/17 www.st.com Contents SD2941-10 Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 Typical performance 5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 6 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 7 Marking, packing and shipping specifications . . . . . . . . . . . . . . . . . . . 15 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 ....................................... 7 DocID11815 Rev 6 SD2941-10 Electrical data 1 Electrical data 1.1 Maximum rating (TCASE = 25 °C) Table 2. Absolute maximum rating Symbol V(BR)DSS(1) VDGR (1) VGS ID PDISS TJ TSTG Parameter Value Unit Drain source voltage 130 V Drain-gate voltage (RGS = 1MΩ) 130 V Gate-source voltage ±40 V Drain current 20 A Power dissipation 389 W Max. operating junction temperature 200 °C -65 to +150 °C Value Unit 0.45 °C/W Storage temperature 1. TJ = 150 °C Table 3. Thermal data Symbol RthJC Parameter Junction to case thermal resistance DocID11815 Rev 6 3/17 17 Electrical characteristics 2 SD2941-10 Electrical characteristics (TCASE = 25 °C) Table 4. Static Symbol Test conditions Min. Typ. Max. Unit V(BR)DSS(1) VGS = 0 V IDS = 100 mA IDSS VGS = 0 V VDS = 50 V 50 mA VGS = 20 V VDS = 0 V 250 nA VDS = 10 V ID = 250 mA VDS(ON) VGS = 10 V ID = 10 A GFS VDS = 10 V ID = 5 A CISS VGS = 0 V VDS = 50 V COSS VGS = 0 V CRSS VGS = 0 V IGSS VGS(Q) (2) 130 V V 2.0 5 V 6 mho f = 1 MHz 415 pF VDS = 50 V f = 1 MHz 236 pF VDS = 50 V f = 1 MHz 17 pF 1. TJ = 150°C 2. VGS(Q) sorted with alpha/numeric code marked on unit. Table 5. Dynamic Symbol POUT GPS hD Test conditions VDD = 28 V IDQ = 250 mA f = 123 MHz VDD = 50 V IDQ = 250 mA f = 175 MHz VDD = 50 V IDQ = 250 mA POUT = 175 W f = 175 MHz 175 Max. 14 15.8 65 VDD = 50 V IDQ = 250 mA POUT = 175 W f = 175MHz 55 VDD = 50 V IDQ = 250 mA POUT = 175 W f = 175MHz All phase angles 10:1 65 Unit W 200 14 VDD = 28 V IDQ = 250 mA POUT = 135 W f = 123 MHz DocID11815 Rev 6 Typ. 135 VDD = 28 V IDQ = 250 mA POUT = 135 W f = 123 MHz Load Mismatch V = 28 V I = 250 mA P DD DQ OUT = 135 W f = 123 MHz All phase angles 4/17 Min. dB % VSWR 25:1 SD2941-10 Electrical characteristics Table 6. VGS sorts Symbol Value Symbol Value Symbol Value AA 1.5 - 1.6 E 2.4 - 2.5 P 3.3 - 3.4 BB 1.6 - 1.7 F 2.5 - 2.6 Q 3.4 - 3.5 CC 1.7 - 1.8 G 2.6 - 2.7 R 3.5 - 3.6 DD 1.8 - 1.9 H 2.7 - 2.8 S 3.6 - 3.7 EE 1.9 - 2.0 J 2.8 - 2.9 T 3.7 - 3.8 A 2.0 - 2.1 K 2.9 - 3.0 U 3.8 - 3.9 B 2.1 - 2.2 L 3.0 - 3.1 V 3.9 - 4.0 C 2.2 - 2.3 M 3.1 - 3.2 D 2.3 - 2.4 N 3.2 - 3.3 DocID11815 Rev 6 5/17 17 Impedance 3 SD2941-10 Impedance Figure 2. Impedance data schematic D ZDL Typical Input Impedance Typical Drain Load Impedance G Zin S Table 7. Impedance data @ 28 V f ZIN (Ω) ZDL (100W) (Ω) ZDL (140W) (Ω) 123 MHz 1.2 - j 3.3 2.0 + j 1.4 2.0 + j 0.73 Table 8. Impedance data @ 50 V 6/17 f ZIN (Ω) ZDL (Ω) 30 MHz 1.7 - j 5.7 6.8 + j 0.9 175 MHz 1.2 - j 2.0 2.0 + j 2.4 DocID11815 Rev 6 SD2941-10 4 Typical performance Typical performance Figure 3. Capacitance vs drain voltage Figure 4. Drain current vs gate voltage 10000 20 ID, DRAIN CURRENT (A) C, CAPACITANCE (pF) Tc=-20 °C f =1MHz 1000 Ciss Coss 100 Crss 10 0 10 20 30 40 Tc=+25 °C 15 10 Tc=+80 °C VDS = 10 V 5 0 50 2 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 Figure 5. Maximum thermal resistance vs case temperature 3.5 4 4.5 5 5.5 6 Figure 6. Safe operating area 0.6 100 0.56 0.52 Ids(A) RTH(j-c) (°C/W) 3 VGS, GATE-SOURCE VOLTAGE (V) 10 (1) 0.48 0.44 25 35 45 55 65 Tc, CASE TEMPERATURE (°C) 75 85 1 1 10 100 1000 Vds(V) (1) Current in this area may be limited by Rds(on) DocID11815 Rev 6 7/17 17 Typical performance SD2941-10 Figure 7. Power gain vs output power Figure 8. Efficiency vs output power 80 22 21 70 175 MHz 20 60 100 MHz 50 18 Nd (%) Gain (dB) 19 17 16 100 MHz 40 30 15 175 MHz 20 14 10 Vdd = 50V Idq = 250mA 13 12 Vdd = 50V Idq = 250mA 0 0 25 50 75 100 125 150 175 200 225 250 275 0 25 50 75 100 Pout (W ) 125 150 175 200 225 250 275 Pout (W ) Figure 9. Input return loss vs output power Figure 10. Gain and efficiency vs output power @ 28V and 100W load line 24 20 100 18 90 16 80 14 70 12 60 10 50 8 40 175 MHz Gain (dB) RTL (dB) 16 12 100 MHz 8 30 6 Gain 4 Vdd = 50V Idq = 250mA 20 Freq = 123 MHz Idq = 250mA 2 0 10 0 0 25 50 75 100 125 150 175 200 225 250 275 0 20 40 60 80 100 120 Output Power (W) Pout (W ) 8/17 Efficiency 4 DocID11815 Rev 6 140 0 160 Efficiency (%) 20 SD2941-10 Typical performance 20 100 18 90 16 80 14 70 12 60 10 50 8 40 Efficiency (%) Gain (dB) Figure 11. Gain and efficiency vs output power @ 28V and 140W load line 30 6 Gain Efficiency 20 4 Freq = 123 MHz Idq = 250mA 2 10 0 0 20 40 60 80 100 120 140 0 160 Output Power (W) DocID11815 Rev 6 9/17 17 Test circuit 5 SD2941-10 Test circuit Figure 12. 30 MHz test circuit schematic (engineering test circuit) Note: All dimension are in inches. Table 9. 30 MHz test circuit component part list Symbol T2 FB1 FB2, FB3 FB4 L1 PCB R1, R3 10/17 Description 1:4 transformer, 25 Ω semi-rigid coax.141 OD 6” Long Toroid X 2, 0.5” OD.312” ID 850µ 2 turns VK200 Shield bead, 1” OD 0.5” ID 850µ 3 Turns 1/4 Wave Choke, 50W Semi-rigid coax.141 OD 12” Long 0.62” woven fiberglass, 1 oz. copper, 2 sides, εr = 2.55 470 Ω 1 W chip resistor R2 360 Ω 1/2 W resistor R4 20 KΩ 10 turn potentiometer R5 560 Ω 1 W resistor C1, C11 470 pF ATC chip cap C2 43 pF ATC chip cap C3, C8, C9 Arco 404, 12-65 pF C4 Arco 423, 16-100 pF C5 120 pF ATC chip cap C6 0.01 μF ATC chip cap C7 30 pF ATC chip cap DocID11815 Rev 6 SD2941-10 Test circuit Table 9. 30 MHz test circuit component part list (continued) Symbol C10 C12, C15 Description 91 pF ATC chip cap 1200 pF ATC chip cap C13, C14,C16, C17 0.01 mF / 500 V chip cap 10 mF 63 V electrolytic capacitor Figure 13. 175 MHz test circuit photomaster 4 inches C18 6.4 inches DocID11815 Rev 6 11/17 17 Test circuit SD2941-10 Figure 14. 175 MHz test circuit 12/17 DocID11815 Rev 6 SD2941-10 6 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Figure 15. M174 package dimensions DocID11815 Rev 6 13/17 17 Package information SD2941-10 Table 10. M174 (.500 DIA 4/L N/HERM W/FLG) mm. inch DIM. min. A 5.56 B max min. 5.584 0.219 3.18 typ. max 0.230 0.125 C 6.22 6.48 0.245 0.255 D 18.28 18.54 0.720 0.730 E 3.18 0.125 F 24.64 24.89 0.970 0.980 G 12.57 12.83 0.495 0.505 H 0.08 0.18 0.003 0.007 I 2.11 3.00 0.083 0.118 J 3.81 4.45 0.150 0.175 K 14/17 typ. 7.11 0.280 L 25.53 26.67 1.005 1.050 M 3.05 3.30 0.120 0.130 DocID11815 Rev 6 SD2941-10 7 Marking, packing and shipping specifications Marking, packing and shipping specifications Table 11. Packing and shipping specifications Order code Packaging Pcs per tray Dry pack humidity VGS code Lot code SD2941-10W Plastic tray 25 < 10% Not mixed Not mixed Figure 16. Marking layout SD2941-10 Table 12. Marking specifications Symbol Description W Wafer process code X VGS sort CZ Assembly plant xxx Last 3 digit of diffusion lot VY Diffusion plant MAR Country of origin CZ Test and finishing plant y Assembly year yy Assembly week DocID11815 Rev 6 15/17 17 Revision history 8 SD2941-10 Revision history Table 13. Document revision history 16/17 Date Revision Changes 15-Nov-2005 1 Initial release 06-Apr-2006 2 Complete version 13-Apr-2006 3 VDS(ON) updated 19-Oct-2011 4 Inserted Section 7: Marking, packing and shipping specifications. Minor text changes in the title and description on the coverpage. 04-Aug-2014 5 Added performances at 28 V. 14-Aug-2015 6 Updated Table 2.: Absolute maximum rating. Minor text changes. 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All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved DocID11815 Rev 6 17/17 17