SD2942
HF/VHF/UHF RF power N-channel MOSFET
Datasheet - production data
Features
Gold metallization
Excellent thermal stability
Common source push-pull configuration
POUT = 350 W min. with 15 dB gain @ 175
MHz
Low RDS(on)
Description
Figure 1: Pin connection
The SD2942 is a gold metallized N-channel MOS
field-effect RF power transistor. The SD2942
offers 25% lower RDS(ON) than industry standard
and 20% higher power saturation than ST
SD2932. These characteristics make the SD2942
ideal for 50 V DC very high power applications up
to 250 MHz.
Table 1: Device summary
Order code
Marking
Package
Packing
SD2942W
SD2942(1)
M244
Tube
Notes:
(1)For
more details please refer to Section 6: "Marking, packing and shipping specifications" .
November 2016
DocID11736 Rev 5
This is information on a product in full production.
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www.st.com
Contents
SD2942
Contents
1
Electrical data .................................................................................. 3
1.1
Maximum ratings ............................................................................... 3
1.2
Thermal data ..................................................................................... 3
2
Electrical characteristics ................................................................ 4
3
Impedance data ............................................................................... 5
4
Typical performance ....................................................................... 6
5
Test circuit (175 MHz) .................................................................... 10
6
7
Marking, packing and shipping specifications............................ 13
Package information ..................................................................... 14
7.1
8
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M244 package information .............................................................. 14
Revision history ............................................................................ 16
DocID11736 Rev 5
SD2942
Electrical data
1
Electrical data
1.1
Maximum ratings
TCASE = 25 °C
Table 2: Absolute maximum ratings
Symbol
Value
Unit
Drain source voltage
130
V
VDGR
Drain-gate voltage (RGS = 1 MΩ)
130
V
VGS
Gate-source voltage
±40
V
ID
Drain current
40
A
PDISS
Power dissipation
500
W
TJ
Max. operating junction temperature
+200
°C
TSTG
Storage temperature
-65 to +150
°C
Value
Unit
0.35
°C/W
V(BR)DSS(1)
Parameter
Notes:
(1)T
1.2
J
= 150 °C
Thermal data
Table 3: Thermal data
Symbol
RthJC
Parameter
Junction-to-case thermal resistance
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Electrical characteristics
2
SD2942
Electrical characteristics
TCASE = 25 °C
Table 4: Static
Symbol
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS(1)
VGS = 0 V
IDS = 100 mA
IDSS
VGS = 0 V
VDS = 50 V
100
µA
IGSS
VGS = 20 V
VDS = 0 V
250
nA
VGS(Q)
VDS = 10 V
ID = 250 mA
4
V
VDS(ON)
VGS = 10 V
I D = 10 A
3.0
V
GFS
VDS = 10 V
ID=5A
CISS
VGS = 0 V
VDS = 50 V
f = 1 MHz
415
pF
COSS
VGS = 0 V
VDS = 50 V
f = 1 MHz
236
pF
CRSS
VGS = 0 V
VDS = 50 V
f = 1 MHz
17
pF
130
V
1.5
5
mho
Notes:
(1)T
J
= 150 °C
Table 5: Dynamic
Symbol
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Test conditions
Min.
Typ.
Max.
Unit
POUT
VDD = 50 V
GPS
VDD = 50 V IDQ = 500 mA POUT = 350 W
f = 175 MHz
15
17
dB
ηD
VDD = 50 V IDQ = 500 mA POUT = 350 W
f = 175 MHz
55
61
%
Load
mismatch
VDD = 50 V IDQ = 500 mA
f = 175 MHz
All phase angles
5:1
IDQ = 500 mA
f = 175 MHz
350
W
POUT = 350 W
DocID11736 Rev 5
VSWR
SD2942
3
Impedance data
Impedance data
Figure 2: Impedance data
Table 6: Impedance data
f
ZIN(Ω)
ZDL(Ω)
250 MHz
1.3 - j 1.9
1.9 + j 3.2
230 MHz
1.2 - j 1.8
2.1 + j 3.7
200 MHz
1.1 - j 1.6
2.7 +j 4.2
175 MHz
1.0 - j 1.4
3.3 + j 4.8
100 MHz
1.8 - j 2.5
7.5 + j 9
50 MHz
3.2 - j 4.4
10 + j 12
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Typical performance
4
SD2942
Typical performance
Figure 3: Capacitance vs. drain voltage
Figure 5: Gate-source voltage vs. case temperature
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Figure 4: Drain current vs. gate voltage
Figure 6: Power gain vs. POUT and case temperature
DocID11736 Rev 5
SD2942
Typical performance
Figure 7: Efficiency vs. case temperature
Figure 8: POUT vs. input power and case temperature
Figure 9: POUT vs. input power and drain voltage
Figure 10: POUT vs. gate voltage and case
temperature
Figure 11: POUT vs. drain voltage and input power
Figure 12: Maximum thermal resist vs. case
temperature
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Typical performance
SD2942
Figure 13: Maximum safe operating area
Figure 14: Transient thermal impedance
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SD2942
Typical performance
Figure 15: Transient thermal model
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Test circuit (175 MHz)
5
SD2942
Test circuit (175 MHz)
Figure 16: 175 MHz production test circuit schematic
Dimensions at component symbols are references for component placement. Gap
between ground and transmission lines is + 0.002{0.05} - 0.000{0.00} typ.
Table 7: 175 MHz test circuit part list
Component
10/17
Description
R1, R2, R5, R6
470 Ohm 1 W, surface mount chip resistor
R3, R4
360 Ohm 0.5 W, carbon comp. axial lead resistor or equivalent
R7, R8
560 Ohm 2 W, resistor 2 turn wire air-wound axial lead resistor
R9, R10
20 kOhm 3.09 W, 10 turn wirewound precision potentiometer
C1, C4
680 pF ATC 130B surface mount ceramic chip capacitor
C2, C3, C7, C8,
C17, C19, C20,
C21
10000 pF ATC 200B surface mount ceramic chip capacitor
C5
75 pF ATC 100B surface mount ceramic chip capacitor
C6
ST40 25 pF - 115 pF miniature variable trimmer
C9, C10
47 pF ATC 100B surface mount ceramic chip capacitor
C11, C12, C13
43 pF ATC 100B surface mount ceramic chip capacitor
C14, C15, C24,
C25
1200 pF ATC 700B surface mount ceramic chip capacitor
C16, C18
470 pF ATC 700B surface mount ceramic chip capacitor
C22, C23
0.1 μF / 500 V surface mount ceramic chip capacitor
C26, C27
0.01 μF / 500 V surface mount ceramic chip capacitor
C28
10 μF / 63 aluminum electrolytic axial lead capacitor
DocID11736 Rev 5
SD2942
Test circuit (175 MHz)
Component
Description
B1
50 Ohm RG316 O.D 0.076[1.93] L = 11.80[299.72] flexible coaxial cable 4
turns through ferrite bead
B2
50 Ohm RG-142B O.D 0.165[4.19] L = 11.80[299.72] flexible coaxial cable
T1
R.F. transformer 4:1, 25 Ohm O.D RG316-25 O.D 0.080[2.03]
L = 5.90[149.86] flexible coaxial cable 2 turns through ferrite multi-aperture
core
T2
R.F. transformer 1:4, 25 Ohm semi-rigid coaxial cable O.D. 0.141[3.58]
L = 5.90[149.86]
L1
Inductor λ 1/4 wave 50 Ohm O.D 0.165[4.19] L = 11.80 [299.72] flexible
coaxial cable 2 turns through ferrite bead
FB1, FB5
Shield bead
FB2, FB6
Multi-aperture core
FB3
Multilayer ferrite chip bead (surface mount)
FB4
Surface mount EMI shield bead
PCB
Woven glass reinforced PTFE microwave laminate 0.06”, 1 oz EDCu, both
sides, εr = 2.55
Figure 17: 175 MHz test circuit photomaster
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Test circuit (175 MHz)
SD2942
Figure 18: 175 MHz test circuit
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SD2942
6
Marking, packing and shipping specifications
Marking, packing and shipping specifications
Table 8: Packing and shipping specifications
Order code
Packing
Pieces per tray
Dry pack humidity
Lot code
SD2942W
Tube
15
< 10%
Not mixed
Figure 19: SD2942 marking layout
Table 9: Marking specifications
Symbol
Description
W
Wafer process code
CZ
Assembly plant
xxx
Last 3 digits of diffusion lot
VY
Diffusion plant
MAR
CZ
Country of origin
Test and finishing plant
y
Assembly year
yy
Assembly week
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Package information
7
SD2942
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
7.1
M244 package information
Figure 20: M244 (0.400 x .860 4L BAL N/HERM W/FLG) package outline
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SD2942
Package information
Table 10: M244 (0.400 x .860 4L BAL N/HERM W/FLG) package mechanical data
mm
Dim.
Min.
A
Typ.
5.59
B
Max.
5.84
5.08
C
3.02
3.28
D
E
9.65
19.81
9.91
20.82
F
10.92
11.18
27.94
G
H
33.91
34.16
I
0.10
0.15
J
1.78
K
1.52
2.59
L
4.83
5.84
M
10.03
10.34
N
21.59
22.10
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Revision history
8
SD2942
Revision history
Table 11: Document revision history
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Date
Revision
Changes
18-Oct-2005
1
First issue.
04-Jan-2006
2
Complete version.
14-Apr-2010
3
Added Figure 13, Figure 14 and Figure 15.
25-Oct-2011
4
Inserted Chapter 7: Marking, packing and shipping
specifications.
24-Nov-2016
5
Updated Table 2: "Absolute maximum ratings".
DocID11736 Rev 5
SD2942
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