SD4010

SD4010 RF & MICROWAVE TRANSISTORS U HF TV LINEAR APPLICATIONS . . . . . . 470-860 MHz 26.5 VOLTS GOLD METALLIZATION P OUT = 20.0W MIN. WITH 9.5 dB GAIN INTERNAL INPUT MATCHING DIFFUSED EMITTER BALLAST RESISTORS .400 x .425 4LFL (M119) hermetically sealed ORDER CODE SD4010 BRANDING SUTV200 PIN CONNECTION DESCRIPTION The SD4010 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors. The SD4010 is intended for use in linear applications up to 1GHz, including UHF television transmitters, transposers and cellular base stations. ABSOLUTE MAXIMUM RATINGS (Tcase = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter VCBO VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current (Maximum) Power Dissipation Junction Temperature Storage Temperature 60.0 60.0 4.0 11.0 88.8 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 1.9 °C/W 1/5 November 1992 SD4010 E LECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min . Typ. Max. Unit BVEBO BVCES BVCEO ICEO hFE Tested Per Side IE = 10mA IC = 50mA IC = 50mA VCE = 26.5V VCE = 5V IC = 0mA VBE = 0V IB = 0mA IE = 0mA IC = 3A 3.0 4.0 — — — 5 80 V V V mA — 60.0 85.0 28.0 30.0 — 25 — 50 DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT GP IMD3 IP3 COB f = 860MHz f = 860MHz PSYNC = 20W VCB = 26.5V f = 860MHz VCE = 26.5V VCE = 26.5V VCE = 26.5V VCB = 26.5V VCE = 26.5V PIN = 2.2W POUT = 20W (note 1) (note 3) POUT = 20W 20.0 9.5 — — — 3:1 28.0 10.5 −48 55 25 10:1 — — −46 — 36 — W dB dBc dBm pF VSWR POUT = 20W PEP (note 2) Load* f = 860MHz Mismatch Note 1: I CQ = IC = 2.7A (1.35A per Si de) *VSWR tested for a minimum of 3:1 SWR at all phase angles. Three Tone IMD Testing (CCIR) f1 = 860.0MHz/ −8dB ref. to PSYNC - Visual Note 2: IP 3 Calcul ated Based on Two-T one IMD Testing: −16dB ref. to PSYNC - Color Subcarrier f3 = 864.5MHz/ −7dB ref. to PSYNC - Aural f2 = 863.5MHz/ = f2 = f1 900.0 MHz/ 900.1 MHz/ IMD 3 (Typ) < − 36dBc −6dB −6dB ref. to P OU T ref. to P OU T Note 3: Test ed Per Si de TYPICAL PERFORMANCE POWER OUTPUT & POWER GAIN vs TOTAL COLLECTOR CURRENT POWER OUTPUT vs POWER INPUT 2/5 SD4010 TYPICAL PERFORMANCE (cont’d) INTERMODULATION DISTORTION vs POWER OUTPUT T EST CIRCUIT SCHEMATIC Balun 1, 2 : 50Ω Coaxial Cable, λ/4 @ 860 MHz C1, C4, C11, C16 : 100µF, 50V Electrolytic C2, C5, C12, C15 : 10µF, 35V Tantalum C3, C6, C7 C8, C19, C20 : 75 pF Ceramic Chip, ATC B C9, C18 : 0.4 - 2.5 pF Variable, JOHANSON Giga-trim C10 : 2pF Ceramic Chip, ATC B C17 : 5pF Ceramic Chip, ATC B L1, L2 : 7 Turns, 0.12” I.D., #22 AWG (1:1) L3, L4 : 5 Turns, 0.12” I.D., #22 AWG (1:1) See Photomaster for Microstrip Lines Board Material: ROGERS Ultra-Lam Er = 2.55, Height = 0.030”, 2 oz. Cu. 3/5 SD4010 P HOTOMASTER OF TEST CIRCUIT 4/5 SD4010 P ACKAGE MECHANICAL DATA Ref. Dwg. No.: 12-0119 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 5/5