SD4017

SD4017 RF & MICROWAVE TRANSISTORS 806-960 MHz CELLULAR BASE STATIONS . . . . . . . . . . GOLD METALLIZATION DIFFUSED EMITTER BALLASTING INTERNAL INPUT MATCHING DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY COMMON EMITTER CONFIGURATION POUT = 30 W MIN. WITH 7.5 dB GAIN η C = 55% TYPICAL TYPICAL LOAD MISMATCH CAPABILITY: 20:1 ALL ANGLES RATED CONDITIONS 10:1 ALL ANGLES @ ± 20% RATED VOLTAGE TYPICAL OVERDRIVE SURVIVABILITY 5 dB .230 6LFL (M142) epoxy sealed ORDER CODE SD4017 BRANDING SD4017 PIN CONNECTION DESCRIPTION The SD4017 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity class AB operation for cellular base station applications. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter 1. Collector 2. Base 3. Emitter Value Unit VCBO VCEO VEBO PDISS IC TJ T STG Collector-Base Voltage Collector-Emitter Voltage Collector-Supply Voltage Power Dissipation Device Current Junction Temperature Storage Temperature 48 25 3.5 88 7.5 200 − 65 to +150 V V V W A °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 2.0 °C/W July 19, 1994 1/7 SD4017 E LECTRICAL SPECIFICATIONS (T case STATIC Symbol Test Conditions Value Min. Typ. Max. Unit = 25° C) BVCBO BVEBO BVCEO BVCER ICBO hFE IC = 100 mA IE = 10 mA IC = 40 mA IC = 40 mA VCE = 24 V VCE = 20 V IC = 2 A RBE = 150 Ω 48 3.5 25 30 10 15 55 5 28 40 — 40 — — — — — 100 V V V V mA — DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT ηc PG COB IMD3 VSWR1 VSWR2 OVD f = 860 MHz f = 860 MHz f = 860 MHz VCB = 25 V POUT = 30 WPEP VSWR = 20:1 VSWR = 10:1 VSWR = 5:1 PIN = PIN (norm) +3dB PIN(norm) = +5dB PIN(norm) = +3dB VCE = 25 V VCE = 25 V VCE = 25 V fo = 1 MHz f1 = 860.0 MHz ICQ = 60 mA ICQ = 60 mA ICQ = 60 mA f2 = 860.1 MHz 30 — 7.5 — — — 55 9 42 −35 — — — — — W % dB pf dBc Typ. Typ. Typ. VCE = 25 V VCE = 25 V ± 20% VCE = 25V ± 20% VCE = 25 V VCE = 25 V ± 20% No Degradation in Output Device No Degradation in Output Device No Degradation in Output Device 2/7 SD4017 TYPICAL PERFORMANCE DC CURRENT GAIN vs COLLECTOR CURRENT OUTPUT CAPACITANCE vs C-B VOLTAGE 85 80 75 70 65 60 h F E 55 50 45 40 35 150 140 130 120 110 100 90 80 70 60 VCE Vce = 25V = 25V C O B VCE Vce =20V = 20V p F F1 = 1MHz IC = 0 30 25 20 15 0 1 2 3 4 5 Pulsed Measurement 50 40 30 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 COLLECTOR CURRENT A COLLECTOR VOLTAGE V DC SAFE OPERATING AREA POWER GAIN vs CASE TEMPERATURE 10 9.4 9.2 9 8.8 8.6 8.4 8.2 8 7.8 7.6 7.4 7.2 0 10 20 30 40 50 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 P I C O W E M A X I M U M 1 G A I N R ∆PGAIN -0.03dB/°C d A BVCER Output Power Held Constant = 30WCW V CE = 25V ICQ = 60mA B 0.1 C-E BREAKDOWN VOLTAGE V CASE TEMPERATURE C 3/7 SD4017 TYPICAL PERFORMANCE (cont’d) OUTPUT POWER vs INPUT POWER OUTPUT POWER & GAIN vs VOLTAGE 40 O U T P U T 25 30 35 O U T P U T 50 45 PG 40 P 10 O W E Pg 35 R P O W E R POUT Pout 20 P O 30 G A 15 W E 25 I N 10 W C W 0 0 0.5 1 1.5 2 2.5 3 5 VCE = 25V ICQ = 60mA R 20 W C W 10 1 16 18 20 22 24 26 28 30 32 34 36 15 Input Power Set = 3.5WCW ICQ Constant = 60mA d B 3.5 4 4.5 5 5.5 14 INPUT POWER WCW COLLECTOR VOLTAGE V IM DISTORTION vs OUTPUT POWER IM3 DISTORTION vs SUPPLY VOLTAGE NO TUNING for SHIFT in LOAD LINE with VOLTAGE -25 -18 -20 -30 -22 IM3 I M -35 I M IM5 -24 -26 -28 -30 -32 -34 -36 -38 POUT Set = 30WPEP No ICQ Adj for V CE D D 3 -40 d B IM7 d B -45 -50 F1 = 860.0MHz F2 = 860.1MHz Two Tones @ PEP-6dB each tone -55 0 5 10 15 20 25 30 35 40 45 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 COLLECTOR VOLTAGE V OUTPUT POWER WPEP 4/7 SD4017 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN TYPICAL COLLECTOR LOAD IMPEDANCE ZCL 800MHz 800MHz FREQ. 800 MHz 830 MHz 860 MHz 900 MHz 915 MHz 930 MHz 945 MHz 960 MHz Z IN (Ω) 4.3 + j 5.8 3.2 + j 6.1 3.5 + j 7.1 5.3 + j 6.4 6.1 + j 6.3 9.4 + j 6.3 6.6 + j 3.0 5.9 + j 1.0 ZCL (Ω) 3.5 + j 0.2 3.5 + j 0.1 2.9 − j 0.2 3.0 − j 0.6 3.2 − j 0.7 3.2 − j 1.1 3.3 − j 1.2 3.4 − j 1.5 POUT = 30W VCE = 25 V Normalized to 50 ohms 960MHz 960MHz 5/7 SD4017 TEST CIRCUIT C1, C19 : 33pF ATC 100B Chip Capacitor C2, C15 : 3.6pF ATC 100B Chip Capacitor C3 : 4.5pF ATC 100B Chip Capacitor C4, C16 C17 : 5.0pF ATC 100B Chip Capacitor C5 : 2.9pF ATC 100B Chip Capacitor C6, C7 : 1.8pF ATC 100B Chip Capacitor C8,C9, C14 : 6.2pF ATC 100B Chip Capacitor C10,C22 : 300pF ATC 100B Chip Capacitor C11,C12 C13 : 5.6pF ATC 100B Chip Capacitor C18 : .5 - 6.0pF Gigatrim Adjustable Capacitor C20 C21 L9 L10 L11 TL1,TL8 TL2,TL3 TL4 TL5 TL6 TL7 : 10pF ATC 100B Chip Capacitor : 10µF (50V) Electrolytic Capacitor : 4 Turns (tight) I.D. 120mil ENAM Cu 20 AWG : 4 Turns (tight) I.D. 158mil ENAM Cu 18 AWG : 1.5 Turns VK-200 Ferrite H.F. Choke : 964 x 85.69 mils (50Ω/36.84°) : 352 x 85.69 mils (50Ω/13.46°) : 222 x 109.03 mils (42.6Ω /8.56°) : 149 x 109.03 mils (42.6Ω /5.74°) : 334 x 85.69 mils (50Ω/12.75°) : 500 x 85.69 mils (50Ω/19.13°) Board MAterial: 1oz Copper 2 sides, Thickness Er = 2.55 = 31.25mil B OARD LAYOUT 6/7 SD4017 PACKAGE MECHANICAL DATA Ref. Dwg.No. 12-0142 rev. C Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibili ty for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. ©1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 7/7