SD4600

SD4600 RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS . . . . . P RELIMINARY DATA GOLD METALLIZATION 860-960 MHz 26 VOLTS EFFICIENCY 50% MIN. P OUT = 60 W MIN. WITH 7.5 dB GAIN .438 x .450 2LFL (M173) epoxy sealed ORDER CODE BRANDING SD4600 SD4600 PIN CONNECTION DESCRIPTION The SD4600 is designed for 960MHz mobile base stations in both analog and digital applications. Including double input and output matching networks, the SD4600 features high impedances allowing operation over the full 860 to 960 MHz bandwidth. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 60 28 3.5 8 146 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 1.2 °C/W *Applies only to rated RF amplifier operation November 1992 1/4 SD4600 E LECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC (Total Device) Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCEO I CEO hFE IC = 100mA IE = 20mA IC = 100mA VCE = 25V VCE = 5V IC = 3A 60 3.5 28 — 25 — — — — — — — — 30 80 V V V mA — DYNAMIC (Total Device) Symbol Test Conditions Value Min. Typ. Max. Unit POUT ηc GP VSWR f = 960MHz f = 960MHz f = 960MHz f = 960MHz VCC = 26V VCC = 26V VCC = 26V VCC = 26V ICQ = .200A ICQ = .200A ICQ = .200A 60 50 7.5 5:1 65 58 8.0 — — — — — W % dB — TYPICAL PERFORMANCE POWER OUTPUT & COLLECTOR EFFICIENCY vs POWER INPUT POUT ηC FREQ = 960MHz VCC = 26V ICQ = 200mA 2/4 SD4600 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN ZCL L TYPICAL COLLECTOR LOAD IMPEDANCE ZCL H H ZIN L FREQ. 860 MHz 900 MHz 960 MHz ZIN (Ω) 17 + j 10 14 + j 10 12.5 + j 8 ZCL (Ω) 11 + j 12 10 + j 10.5 8.5 + j 8.5 POUT = 60W VCC = 26V Normalized to 50ohms T EST CIRCUIT C1,C10 : C2,C5 C11,C14: C6,C7 : C8 : C9 : C15 : 120pF Chip Capacitor B Size 470pF Chip Capacitor B Size 100µF Electrolytic Capacitor 4.7µF Electrolytic Capacitor 10µF Electrolytic Capacitor 39,000pF Chip Capacitor C16 C17 C18 R1, R2 R3 R4 S1 : : : : : : : 63µF Capacitor .6 - 4.5pF Johanson Variable Capacitor .8 - 8.0pF Johanson Variable Capacitor 20Ω (.5W) Chip Resistor 10K Potentiometer 4 3.17KΩ (.25W) Chip Resistor Teflon Glass Er = 2.33 H = .020 3/4 SD4600 P ACKAGE MECHANICAL DATA Ref. Dwg. No.: 12-0173 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4